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研究生:謝明山
研究生(外文):Ming Sun Hsieh
論文名稱:氟與氮摻雜對複晶矽氧化層品質之研究
論文名稱(外文):Study on Fluorine and Nitrogen Incorporation of Polysilicon Oxide Integrity
指導教授:劉堂傑楊文祿
指導教授(外文):Don-Gey LiuWen Luh Yang
學位類別:碩士
校院名稱:逢甲大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:74
中文關鍵詞:非揮發性記憶元件複晶矽氧化層氟離子氮離子NF3
外文關鍵詞:nonvolatile memorypolyoxidefluorinenitrogenNF3
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  • 收藏至我的研究室書目清單書目收藏:0
本論文中,研究利用不同的方法讓氟與氮被覆在複晶矽氧化層界面所產生的效應。首先將氟離子佈植在上層複晶矽再推入,發現氟被覆在界面處而複晶矽氧化層的電性獲得改善。實驗結果顯示,改善的原因推測是由於氧化層的應力獲得釋放,與下層複晶矽表面結構較無明顯的變化。
第二部份,一種新穎的技術使氟與氮同時被覆來改善複晶矽氧化層的品質,我們提出使用NF3氣體作回火熱處理。經過NF3回火的試片可以改善複晶矽氧化層的特性,推究其原因在於複晶矽氧化層界面同時堆積了許多氟原子與氮原子而改善電性。最後一部份,堆疊取代高溫成長的氧化層,以堆疊方式所得到的氧化層可以降低晶粒邊界所導致的加速氧化成長效應,使表面平坦。使用NF3在熱成長氧化層及堆疊氧化層作回火熱處理,N2和NF3 氣體比例為200:3sccm,時間20分鐘,可獲得最佳效果。使用化學氣相沈積氧化層再經由NF3作回火處理是一種非常可行的製程方法。

In this thesis, the authors study the effects of incorporating fluorine and nitrogen into polysilicon oxide in different ways. First, the fluorine was directly implanted into the top polysilicon and then annealed. It was found that the polyoxide breakdown strength and charge to breakdown improved as fluorine was incorporated into the polyoxide interface. Experimental results were shown that the improvement could suspect to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture. Secondly, a novel technique to incorporate both F and N to improve the polyoxide integrity. The process we proposed was the NF3 annealed polyoxide using the LPCVD thermal treatments. The NF3 annealed samples had improved the polyoxide integrity in which was attributed to incorporated both fluorine and nitrogen atoms pile-up near the polysilicon/polyoxide interface. In the third part, deposited instead of thermally grown oxides were studied to form high quality inter-polysilicon dielectrics due to reduce the grain boundary oxidation enhancement. The surface morphology could be improved by replacing the thermal grown oxide with deposited TEOS oxide. The electrical characteristics of polyoxide can be improved and the optimum condition is N2: NF3=200:3 and 20 minutes for both thermal grown and deposited TEOS samples. It could be concluded that the LPCVD TEOS oxide deposited on polysilicon with NF3 annealed is a very attractive inter-polysilicon dielectric fabrication process.

摘要…………….…………………………………………………………...i
英文摘要…………………………………..……………………………….ii
致謝…………………………………..……………………………………iii
目錄…………………………………………………………………………v
圖目錄……………………………………………………………………..vii
第一章 緒論
1.1背景………………………………………………………………………1
1.2 量測方法……………………………………..…………………………2
1.3 論文架構……………………………………..…………………………4
第二章 氟離子佈植複晶矽氧化層的特性
2.1 引言……………………………………………..………………………8
2.2 實驗步驟…………..……………………………………………………9
2.3 結果與討論………………………………….…………………………11
2.4 結論……………………………………………………………………14
第三章 利用NF3氣體回火提昇複晶矽氧化層品質
3.1 引言……………………………………………………………………25
3.2 實驗步驟………………………………………………………………25
3.3 結果與討論……………………………………………………………26
3.4 結論……………………………………………………………………29
第四章 使用堆疊式及NF3回火改善複晶矽間介電層之整合性
4.1 引言……………………………………………………………………39
4.2 實驗步驟………………………………………………………………40
4.3 結果與討論……………………………………………………………41
4.4 結論……………………………………………………………………43
第五章 總結……………………………………………………………53
參考文獻……………………………………..……………………………55
作者簡介…………………………………………………………………62

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