本實驗是以水熱法在矽基板上合成矽酸鍶薄膜，用氫氧化鍶鹼性溶液與矽基板在密封的高壓釜中反應，可以形成附著性佳的薄膜，因其具有設備簡單、所須溫度比其它薄膜合成方法（CVD,PVD）低，反應完後並不須高溫的熱處理且具高純度等優點，所以極具有發展的潛力。
實驗結果顯示：
（1） 隨著反應溫度的上升，矽酸鍶結晶性會較高，結晶顆粒也較大，鍶離子濃度0.03M的條件下，180℃持溫六個小時的晶粒大小為0.5m，而在240℃持溫六個小時的情形下，晶粒便可達到30m。
（2） 在反應時間變化上，隨著反應時間的增長，結晶性會較高而結晶顆粒會較大，但隨著反應時間的變化較不如隨溫度變化的明顯，鍶離子濃度為0.03M、 200℃只持溫二個小時的反應條件下，晶粒只能成長到1.4m，若200℃持溫度反應十四個小時，晶粒便可成長至2.8m。
（3） 鍶離子的濃度對結晶粒子的影響性並不大，在鍶離子起始濃度為0.008M~0.05M，200℃持溫六個小時的反應條件下，矽酸鍶晶粒大小皆在1.2~1.8m之間，並無明顯的變化。
（4） 矽酸鍶薄膜的電阻會隨著結晶性而變化，結晶性愈高則其電阻係數愈大，在鍶離子的濃度為0.03M、反應溫度200℃持溫14個小時的條件下，電阻係數為3.26 ×106 ohm-cm，在添加氧化鈮0.05M當礦化劑的情形下，電阻係數可達3.84×106 ohm-cm，整體而言，矽酸鍶薄膜的電阻係數皆介於104~108ohm-cm之間，屬半導體範圍。
（5） 在相對介界常數性質，隨著反應濃度的增加、反應溫度的上升及反應時間的增加，矽酸鍶薄膜的相對介電常數會下降，主要是因為隨著晶粒的增大單位體積的晶界數淢少，降低原子分極和配向分極效應，相對介電常數也隨著降低。

In this research, strontium silicate（SrSiO3）thin-film was synthesized on wafer by hydrothermal method. Wafer being reacted in an alkaline aqueous solution containing strontium hydroxide through the autoclave at sealed conditions. The traction can form well dense thin-film with good adherence on substrates. Because of its advantages such as simple instrumentation, lower preparation-temperature, without annealing for crystallization after deposition, and high purity of the products, this method is very worthy developing.
In this experiment, it is indicated that :
（1） The crystal will be better and bigger with the higher temperature of the reactions. The crystal size is 0.5m of the six hour’s reaction at 180 degrees in 0.03 M concentration of strontium hydroxide. The crystal size can be 3.0m reacted at 240degrees.
（2） The crystal will be better and bigger with the period of the reactions. The difference of crystal with the reaction’s period smaller than the reaction’s temperature. The crystal size is 1.4m of the two hour’s reaction at 200 degrees in 0.03 M concentration of strontium hydroxide. The crystal size can be 2.8m reacted with 14 hr period.
（3） The changes of crystal’s properties effected by the concentration of strontium hydroxide isn’t obvious. The crystal size is 1.2m to 1.8m of the six hour’s reaction at 200 degrees in 0.008 M to 0.05M concentration of strontium hydroxide.
（4） The resistivity changes with the crystallization . The resistivity increases with better crystallization. The resitivity is 3.26 ×106 ohm-cm of the fourteen hour’s reaction at 200 degrees in 0.03M concentration of strontium hydroxide. The resitivity is 3.84 ×106 ohm-cm of the six hour’s reaction at 200 degrees in 0.03M concentration of strontium hydroxide and add 0.05M niobium hydroxide to be mineralizer . The electrical resistivity of the thin film is 104~108ohm-cm , belonging to be a semiconductor material .

中文摘要…………………………………………………………………Ⅰ
英文摘要………………………………………………………………… Ⅲ
誌謝………………………………………………………………………Ⅴ
總目錄…………………………………………………………………… Ⅵ
表目錄…………………………………………………………………… Ⅸ
圖目錄……………………………………………………………………Ⅹ
第一章 緒論…………………………………………………………… 1
1-1簡介……………………………………………………………… 1
1-2 研究目的………………………………………………………… 2
1-3 研究目標……………………………………………………………4
第二章 理論基礎……………………………………………………6
2-1水熱法……………………………………………………………… 6
2-1-1水熱法反應系統………………………………………………6
2-1-2 水熱法反應機構…………………………………………… 8
2-2陶瓷膜薄…………………………………………………………… 15
2-3介電陶瓷…………………………………………………………… 18
2-4介電陶瓷的分類…………………………………………………… 24
第三章 實驗裝置與步驟………………………………………… 27
3-1實驗藥品…………………………………………………………… 27
3-2 實驗儀器…………………………………………………………… 28
3-3 實驗流程…………………………………………………………… 31
3-3-1矽基皮板之前處理………………………………………… 31
3-3-2製配氫氧化鍶水溶液……………………………………… 33
3-3-3反應狀態…………………………………………………… 33
3-4 性質測定方法及基本原理………………………………………… 37
3-4-1 X-光繞射分析……………………………………………… 37
3-4-2掃描式電子顯微鏡的微結構分析………………………… 38
第四章 結果與討論…………………………………………………… 40
4-1 X-光繞射分析…………………………………………………… 40
4-2 顯微結晶結構分析……………………………………………… 40
4-1-1氫氧化鍶濃度的影響……………………………………… 43
4-1-2 溫度的影響………………………………………………… 46
4-1-3 時間的影響………………………………………………… 49
4-1-4 pH值的影響………………………………………………… 49
4-1-5 冷卻速率的影響…………………………………………… 52
4-1-6 反應中改變濃度的影響…………………………………… 52
4-3 粒徑及膜厚分析………………………………………………… 56
4-4 電性分析………………………………………………………… 62
4-4-1 抗阻量測分析…………………………………………… 62
4-4-1 抗阻量測分析…………………………………………… 67
4-5 摻雜氧化鈮、鑭………………………………………………… 71
第五章 總論與後續工作……………………………………………… 76
參考文獻………………………………………………………………… 78
自述……………………………………………………………………… 82

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