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研究生:黃信維
研究生(外文):Hsin-wei Huang
論文名稱:Mo/Si0.76Ge0.24界面反應之研究
論文名稱(外文):Study of Interfacial Reactions of Mo/Si0.76Ge0.24
指導教授:林文台
指導教授(外文):Wen Tai Lin
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:81
中文關鍵詞:島嶼狀結構鍺偏析
外文關鍵詞:island structureGe segregation
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本論文係利用脈衝KrF雷射退火(pulsed laser annealing)研究Mo/Si0.76Ge0.24之界面反應,在實驗過程中係以能量密度(energy density)及脈衝數(pulse number)為控制參數。真空退火(vacuum annealing)及快速退火(rapid thermal annealing)則用來做對比。在500-700℃真空退火時,連續的hexagonal Mo(Si1-xGex)2(h-Mo(Si1-xGex)2)膜形成。Ge由h-Mo(Si1-xGex)2膜偏析至Si0.76Ge0.24層,且隨溫度的升高而變的更嚴重。同時在Si0.76Ge0.24層中出現非晶質區。在700℃時h-Mo(Si1-xGex)2轉換成tetragonal Mo(Si1-xGex)2(t-Mo(Si1-xGex)2)。在快速退火部分h-Mo(Si1-xGex)2及t-Mo(Si1-xGex)2分別在750及950℃生成。在750℃時和真空退火相同的偏析及非晶質結構產生。而多脈衝雷射退火可以生成連續的h-Mo(Si1-xGex)2膜,且在Si1-xGex層中無非晶質區形成。但Ge的偏析仍然不可避免,目前的研究顯示甚至在更高的雷射退火能量,t-Mo(Si1-xGex)2相仍無法生成。

Interfacial reactions of Mo/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of the energy density and pulse number. Vacuum annealing and rapid thermal annealing were also performed on some samples for comparison. Upon vacuum annealing at a temperature of 500-700℃ a continuous hexagonal Mo(Si1-xGex)2(h-Mo(Si1-xGex)2) film was formed, while Ge segregation from the h-Mo(Si1-xGex)2 film to the underlying Si0.76Ge0.24 occurred with the extent becoming more severe at higher annealing temperatures. Concurrently, amorphous structures appeared in the Si0.76Ge0.24 substrate. At 700℃ h-Mo(Si1-xGex)2 transformed to tetragonal Mo(Si1-xGex)2(t-Mo(Si1-xGex)2). Upon rapid thermal annealing h-Mo(Si1-xGex)2 and t-Mo(Si1-xGex)2 were formed at 750 and 950℃ respectively. At 750℃ the same phenomena, i.e., Ge segregation and the formation of amorphous structure, as observed in vacuum annealing also occurred. Multiple pulsed KrF laser annealing could produce a continuous h-Mo(Si1-xGex)2 film without forming amorphous structures in the Si0.76Ge0.24 substrate, but it could not suppress Ge segregation. In the present study, no t-Mo(Si1-xGex)2 was formed upon pulsed KrF laser annealing even at higher energy densities.

目錄
中文摘要
英文摘要
致 謝
圖表目錄
本文
一、 前言
1. 金屬矽化物在半導體工業的應用................................................1
2.Mo與W的矽化物與鍺化物........................................................3
3.金屬矽鍺化物 ............................................................................4
4.雷射的基本原理..........................................................................13
4-1.雷射的基本特性.......................................................................13
4-2.輻射場與物質交互作用...........................................................15
4-3.雷射的產生...............................................................................15
4-4.準分子雷射...............................................................................16
5.雷射退火的種類..........................................................................18
5-1.雷射退火在半導體工業的應用...............................................21
5-2.雷射退火生長金屬矽化物.......................................................23
5-3.研究動機...................................................................................24
二、 研究方法及步驟.............................................................................26
三、 結果與討論.....................................................................................31
3-1.真空退火...................................................................................31
3-2.快速退火...................................................................................32
3-3.雷射退火...................................................................................32
3-3-1.單脈衝雷射退火....................................................................33
3-3-2.多脈衝雷射退火....................................................................33
四、 結論.................................................................................................36
五、參考文獻.........................................................................................38

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