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研究生:龍柏華
研究生(外文):Bor-Hwa Long
論文名稱:射頻偏壓輔助微波電子迴旋共振化學氣相沉積法成長類鑽碳膜之研究
指導教授:洪敏雄洪敏雄引用關係
指導教授(外文):Ming-Hsiung Hon
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學及工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:70
中文關鍵詞:微波電子迴旋共振類鑽碳膜附著性
外文關鍵詞:microwaveECRDLCadhesionAFM
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本研究採用外加射頻偏壓(RF Bias)輔助微波電子迴旋共振氣相沈積法(MW/ECR CVD)成長類鑽碳膜,在基板不加溫的條件下進行沈積,工作壓力為3x10-3torr,基材分別為矽晶片、 康寧玻璃7059。
本設備的電漿產生區與試片沈積區分離,微波電子迴旋共振與射頻輝光放電所產生的電漿密度與解離率相差很大,所以製程主要目的在分別利用微波功率來控制氣體解離率、外加射頻偏壓(RF Bias)來控制離子轟擊基板能量,以達到一般PECVD製程無法達到的製程參數控制,瞭解鍍膜結構的變化,並利用被覆SiCx梯度層及增加射頻偏壓值來改善鍍膜附著性。
研究結果顯示在加入射頻偏壓後,鍍膜由含碳氫鍵結量較高的類高分子碳膜轉變成類鑽碳膜,鍍膜表面平整度觀察可達5nm以內,橫截面無柱狀組織結構,鍍膜成長速率隨著微波功率及射頻偏壓的增加有先增後減的趨勢,隨著甲烷流量提高則有漸增的趨勢,鍍膜結構也隨著上述參數有所變化,在sp3 /sp2之比例較高時,拉曼光譜特性峰值往低頻位置偏移,鍍膜有較高的硬度,最大硬度可達3400Hv。在附著性改善方面,添加SiCx梯度中介層及增加射頻偏壓對於鍍膜的附著性有顯著的改善,鍍膜臨界荷重值可由2N增加至80N。
Electron cyclotron resonance chemical vapor deposition (ECR CVD) method with radio-frequency (RF) bias was used to deposit the diamond-like carbon (DLC) films. Under the conditions of working pressure of 3x10-3 torr without heating, the DLC films was deposited onto silicon wafer and corning 7059 glass respectively using the gas mixture CH4-Ar and CH4-H2.
The plasma generation zone and substrate deposition zone are separated in this system. The plasma density and fractional ionization of microwave power are several orders larger than the RF power . The main objective of this research is to control the ionization of the reactant gas by microwave power and ion bombardment energy by RF bias individually to investigate the variations of the film structure. For increasing the applications, the SiCx gradient interlayer and raising RF bias were added to improve the adhesion of DLC film.
The results reveal that the carbon film of polymer-like structure that containing more C-H bonds changes to diamond-like structure after adding the RF bias. The roughness of DLC films observed by AFM is less than 5nm. Growth rate of DLC is a function of microwave power and Rf bias and increases with the flow rate ratio of methane to hydrogen. The higher the ratio of sp3 to sp2, the higher apparent hardness obtained. By adding SiCx interlayer and raising Rf bias the critical load increases from 2N to 80N in adhesion measurements.
中文摘要………………… ………………………………………. I
英文摘要………………….……………………………………….. II
目錄………………………………………………………………… IV
圖目錄……………………………………………………………… VI
表目錄…………………………………………………………….. VIII
第一章 緒論
1-1 類鑽碳膜及其應用……………………………………….… 1
1-2 微波電子迴旋共振化學氣相沈積法………………………. 2
第二章 理論基礎與前人研究……………………………………… 4
2-1非平衡輝光放電…………………………………………….. 4
2-1-1 熱力學分析…………………………………………… 7
2-1-2 動力學分析……………………………………………. 7
2-2 微波電子迴旋共振原理……………………………………. 11
2-3 類鑽碳膜的結構與成長機構……………………………… 17
2-4 附著性測試 ……………………………………..………… 20
第三章 實驗方法與步驟…………………………………………… 25
3-1 實驗流程…………………………………………………….. 25
3-2 系統設計與安裝…………………………………………….. 26
3-3 材料的選擇………………………………………………….. 28
3-4 蒸鍍條件與步驟…………………………………………….. 29
3-5 分析與測試………………………………………………….. 30
第四章 結果與討論………………………………………………… 32
4-1 鍍膜的成份與表面及截面形態…………………………….. 32
4-2 鍍膜的成長特性…………………………………………….. 40
4-3 鍍膜的結構與硬度的關係…………………………………. 45
4-4 鍍膜附著性的改善…………………………………………. 56
第五章 結論………………………………………………………… 65
參考資料…………………………………………………………….. 66
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