臺灣博碩士論文加值系統

本論文以有機金屬氣相磊晶法成長砷銻化銦之異質接面、多層量子井與應力型多層量子井發光二極體結構等，並探討其材料特性。且利用其條件成長製作砷銻化銦/砷化銦光檢測器，並研究改善砷銻化銦/砷化銦光檢測器之效能。詳細探討磊晶成長之條件如:成長溫度、壓力及五族與三族比例等。薄膜成長條件之電及光特性利用雙晶X光撓射、霍爾效應、電流電壓特性曲線與光響應等分析之。
未摻雜砷銻化銦已經成長於p型砷化銦基板上，基板溫度從425度到600度。改變成長材料五族與三族比例去觀察表面狀況可分析對其之影響。基板溫度從425度到600度時，電子載子濃度從1.524x1017 cm-3到5.632x1019 cm-3。電子移動力由霍爾效應可測出其值隨基板溫度增加而減少，反之亦然。基板溫度425度時，電子移動力最大，於77K與300K分別為7826.1 and 5845.2 cm2/V.s，從表面狀況與雙晶X光撓射分析成長薄膜品質。砷銻化銦成長於p型砷化銦之基板上，磊晶最佳成長條件:基板溫度550度、成長壓力150 torr及五族與三族比例 8.59、成長速率為1.5mm/hr、載子濃度4.032 x1019cm-3。砷銻化銦成長於p型砷化銦之基板上，於基板溫度475度磊晶，最佳成長條件:成長壓力150 torr及五族與三族比例11.56、成長速率為1.2mm/hr、載子濃度 5.47 x1017 cm-3。砷銻化銦成長於p型砷化鎵之基板上磊晶最佳成長條件:基板溫度550度、成長壓力150 torr及五族與三族比例21.57、成長速率為1.45mm/hr、載子濃度3.24 x1019 cm-3。
我們已成功磊晶砷銻化銦p-n異質接面、多層量子井。運用已知成長條件，砷銻化銦應力型多層量子井發光二極體結構，可順利成長於p型砷化銦之基板上 透過雙晶X光撓射、STEM與SIMS，可知其磊晶薄膜品質良好。
本論文研究各種披覆材料於砷銻化銦/砷化銦偵測器之光電特性。從電流-電壓量測中，我們發現在砷銻化銦/砷化銦上成長ZnS/native-oxide層或作硫化物處理可以有效地減少漏電流。藉由比較訊號雜訊比與D*值，可知砷銻化銦/砷化銦偵測器在77K表現最佳。此外，量測結果亦顯示作ZnS/native-oxide層披覆的砷銻化銦/砷化銦偵測器具有最佳的訊號雜訊比與D*值。其最大的訊號雜訊比與D*值分別為206.2與1.06’1010 cmHz1/2/W。綜合砷銻化銦/砷化銦檢測器的光電特性之量測結果，可知對砷銻化銦/砷化銦檢測器而言兩層式堆疊的ZnS/native-oxide架構是一種極佳與極合適的披覆層。

This work has focused on MOCVD epitaxial growth and characterization of InAsSb heterostructure, InAsSb MQW and the strained MQW LEDs structure. Then we fabricated the InAsSb/InAs photodetector and improved the performance of detector. The growth conditions, such as growth temperature, pressure and V/Ⅲ ratio, are detailed. Electrical and optical properties of the MOCVD growth epilayers are characterized by Double Crystal X-ray diffraction patterns, Hall measurements, I-V and photo response.
Undoped InAsSb epitaxial layers have been grown on (100) p-type InAs and substrate temperature between 425 to 600 oC and growth pressure150 torr. The mole fraction ratios were varied in order to study the effect on surface morphologies. The 300K electron concentration increased from 1.524x1017 to 5.632x1019 cm-3 when growth temperature changed between 425 and 600oC. The mobility is seen to increase with decreasing growth temperature down to 425oC at which point the highest 77K and 300 K mobility of the material is 7826.1 and 5845.2 cm2/V.s, respectively. From the examinations of surface morphologies and DCXRD. It was found the smooth and mirror like surface can be obtained the optimum growth condition of InAsSb epilayers on (100) InAs substrates at 550oC, 150 torr and V/Ⅲ=8.59 that growth rate is 1.5 mm/hr and the 300K electron concentration is 4.032 x 1019 cm-3. The growth temperature at 475oC, then the optimum growth condition of InAsSb epilayers on (100) p-type InAs substrates are 150 torr, V/Ⅲ=11.56 , the growth rate is 1.2 mm/hr and the 300K electron concentration is 5.47x1017 cm-3. InAsSb epitaxial layers have been grown on (100)p-type GaSb substrates with optimum growth conditions as 550oC, 150 torr and V/Ⅲ=21.57. The 300K electron concentration is 3.24x1019 cm-3 and the growth rate is 1.45 mm/hr.
We had succeeded to grow the InAsSb epi-layer heterostructure, p-n junction and MQW. Now, using these results InAsSb/InAs strained MQW LEDs structure have been grown on lattice-match InAs substrates. From double X?ray diffraction measurements, STEM and SIMS, it is found that good quality crystal films for device of manufacture.
In this thesis, the electrical and optical characteristics of InAsSb/InAs p-n junction photodetectors with various passivation materials have been studied. By the I-V measurement, we found that InAsSb/InAs photodiodes with ZnS/native-oxide treatment or sulfide passivation layer can reduce leakage current effectively. By comparing the signal to noise ratio and specific detectivity (D*), the results indicate that InAsSb/InAs infrared detectors work best at 77 K. Besides, it also indicates that the InAsSb/InAs photodetector with ZnS/native-oxide passivation has the best signal-to-noise ratio and specific detectivity. It's maximum signal to noise ratio and specific detectivity value are about 206.2 and 1.06’1010 cm2/V.s, respectively. By summarizing the results the electrical and the optical characteristics of InAsSb/InAs photodetector, we can conclude that the two-layer stacked ZnS/native-oxide structure is an excellent and suitable passivation for InAsSb/InAs infrared detector.

Contents
Abstract ( in Chinese )
Abstract ( in English )
Acknowledgements
Table and Figure Captions
Chapter 1 Introduction
Chapter 2 MOCVD Growth System, Experimental
Preparations and measurement systems
2.1 Substrate Preparation
2.2 MO and Gas Reactants
2.3 MOCVD Growth System Description
2.3.1 The Gas Handling System
2.3.2 Reactor and Heating System
2.3.3 Automatically Pressure Control (APC) System
2.3.4 Exhaust System
2.4 The Introduction of Fundamental Material
Measurement Systems
2.4.1 DCXRD (Double crystal X-ray diffractometry)
2.4.2 SEM (Scanning electron microscopy) and TEM
(Transmission electron microscopy)
2.4.3 SIMS (Secondary Ion mass spectrometry)
2.4.4 AES (Auger Electron Spectroscopy)
2.4.5 XPS (X-Ray Photoelectron Spectroscopy)
2.4.6 EPMA (Electron probe microanalysis)
2.4.7 Hall effect measurement (the ven der Pauw
technique)
Chapter 3 MOCVD Growth of InAsSb/InAs and
InAsSb/GaSb Heterostructures, Multiple
Quantum Well and LEDs Structure
3.1 Experimental Procedure
3.2 Characteristics of InAs Epilayer Grown on
(100) p-type GaSb and p-type InAs Substrate
3.3 Characteristics of InAsSb Epilayer Grown on
(100) p-type InAs Substrate
3.3.1 InAsSb Epilayer Grown on (100) InAs Substrate
3.3.2 InAsSb Epilayer Grown on (100) GaAs Substrate
3.4 Characteristics of InAsSb Epilayer Grown on
(100) p-type GaSb Substrate
3.5 The Growth of InAsSb/InAs (MQW) on
InAs and GaSb respectively, and InAsSb/GaSb
(MQW) on GaSb
3.6 Doping incorporation by LP-MOCVD for InAsSb
epi-layer on p-type InAs and GaSb substrate
3.7 MOCVD growth for InAsSb/InAs photodiode
Fabrication
3.7.1 Unpassivated Diode
3.7.2 Diode with ZnS Passivation
3.7.3 Diode with Sulfur Passivation
3.7.4 Diode with ZnS/native-oxide Passivation
3.7.5 Diode with ZnS/Sulfur Passivation
3.8 Grown the strained MQW LEDs structure
on (100) p-type InAs Substrate
Chapter 4 The Electrical and Optical Properties of
InAsSb/InAs Photodetectors
4.1 The Electrical Characteristics of InAsSb/InAs
Photodetectors
4.1.1 Current-Voltage (I-V) Measurement at Room
Temperature
4.1.2 Mechanism for Surface Leakage current
4.1.3 Photocurrent Measurement at Room Temperature
4.2 The Optical Characteristics of InAsSb/InAs
Photodetectors
4.2.1 Spectral Response
4.2.2 Specific Detectivity (D*)
Chapter 5 Conclusion and Future Work
Reference
Tables and Figures

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