本論文利用一室溫成長之系統來成長（LPD）二氧化矽膜，繃並以此為基礎嘗試發展摻氮磷之二氧化矽膜；在探討其性質上，我們做了不同物性及化性的測試，包括AES，TEM，FTIR，XPS等，在電性方面用高頻電容-電壓曲線來分析介面之品質，藉由漏電流及崩潰電壓來判斷氧化層之品質。
在LPD含氟二氧化矽的實驗中，調變六氟矽酸的濃度將可以得到不同含氟量的二氧化矽膜，藉由FTIR的頻譜可知，1.5M的濃度可得到最高之含氟量。在以氨水為氮離子摻質來源的實驗中，未經高溫熱處理的LPD-SiON中的氮離子因尚未活化之故，漏電流將隨氨水濃度增加，經900℃高溫熱處理30分的氧化膜將顯現較高的崩潰電壓的特性，可由原先未摻雜之8MV/cm提升至13.5MV/cm；在加入磷酸之後，沈積率與折射率都將有所增加，藉由調變溶液中的PH值將可使平帶電壓由-6.2V往較低的-2V方向移動。

In this paper, we use a room temperature processing system, Liquid Phase Deposition (LPD) method, as theoretic background to study the doping (N, P) silicon oxide；To investigate the the properties of silicon dioxide , we have done different physical and chemical tests, including AES, TEM, FTIR, XPS,. We use the high frequency C-V curve to study the interface properties. The leakage current and breakdown voltage help to clarify the film quality.
The concentration of fluorine in the LPD-SiO2 change with the concentration of hydro-fluorosilicic, and by the FTIR spectroscopy we find the concentration of about 1.5M will get the maximum concentration of fluoric incorporation. With the addition of Ammonia as a nitride-doped source, we can find the higher leakage current of as-deposited silicon dioxide due to the higher inactive impurity ions in it. After the Rapid Thermal Annealing at 900℃ for 30 minutes, it will perform better quality in the breakdown voltage. With the incorporation of H3PO4, the deposition rate and refractive index of LPD-SiO2 is increased and the flat-band voltage will be decreased .

第一章 簡介
1-1 發展背景
1-2 論文架構
第二章 實驗與特性量測
2-0 簡介
2-1 基本沈積機制
2-2 LPD的優點
2-3 沈積系統
2-4 晶圓潔淨步驟
2-5 液相沈積溶液的備置
2-5-1 飽和六氟矽酸的備置
2-5-2 硼酸備置
2-5-3 摻質溶液備置
2-6 液相沈積流程
2-7 MOS電容之製作
2-8 量測方法
2-8-1 物理性質與化學性質量測
2-8-2 電性量測
第三章 摻質(F，N，P)氧化層之特性
3-1 LPD-SiO2摻氟的影響
3-1-1 實驗流程
3-1-2 AES縱深分佈
3-1-3 XPS頻譜分析
3-1-4 SEM、TEM及EDS元素分析
3-1-5 基本延遲成長曲線
3-1-6 硼酸對漏電流特性之影響
3-1-7 快速熱退火對膜特性之影響
3-2 LPD-SiO2摻氮的影響
3-2-1 實驗流程
3-2-2 SIMS分佈
3-2-3 NH4OH量對沈積速率之影響
3-2-4 NH4OH量對折射率之影響
3-2-5 XPS峰值變化
3-2-6 NH4OH量對C-V特性變化
3-2-7 NH4OH量對I-V特性變化
3-2-8 快速熱退火對折射率的影響
3-3 LPD-SiO2摻磷的影響
3-3-1 實驗流程
3-3-2 SIMS分佈
3-3-3 FTIR頻譜之峰值變化
3-3-4 用快速熱退火形成P-O鍵結
3-3-5 H3PO4量對成長速率之影響
3-3-6 H3PO4量對折射率之影響
3-3-7 C-V特性探討
3-3-8 I-V特性探討
第四章 結論
4-1 結果與討論
4-2 未來工作
參考文獻
圖表目錄
圖1-1 基本架構圖。
圖2-1 液相沈積系統之設備圖
圖3-1 液相沈積實驗流程
圖3-2 LPD摻氟二氧化矽膜之歐傑縱深分析。
圖3-3 LPD摻氟二氧化矽膜之XPS頻譜分析
圖3-4 LPD摻氟二氧化矽膜SEM及TEM
元素分析
圖3-5 LPD-SiOF之EDS分析圖
圖3-6 顯示不同濃度之六氟矽酸成長之SiOF
的FTIR頻譜圖
圖3-7 六氟矽酸濃度對應於FTIR峰值之變化
圖3-8 為FTIR圖中Si-F峰值強度相對於Si-O峰值
強度之比值(%)
圖3-9 快速熱退火(900℃, 180秒) 對LPD-SiOF
中F離子之影響
圖3-10 LPD-SiOF延遲成長曲線
圖3-11 比較硼酸對於LPD氧化層漏電流之影響
圖3-12 研究不同的六氟矽酸濃度對於漏電流的
影響
圖3-13 針對不同的溫度進行退火觀察氧化層
厚度與折射率的變化。
圖3-14 顯示在高溫之下不同熱處理時間對折
射率的影響。
圖3-15 LPD摻氮實驗流程
圖3-16 LPD-SiON之SIMS的縱深分析圖
圖3-17 氨水濃度對於沈積速率的影響
圖3-18 氨水濃度對於折射率的影響
圖3-19 不同氨水濃度對Si、F、N的XPS峰值
變化情形
圖3-20 氨水濃度對於氧化層有效電荷數(Qeff)
與平帶電壓(Vfb)的影響
圖3-21 不同氨水濃度對漏電流特性及崩潰
電場的影響
圖3-22 LPD-SiON經過快速熱處理過後之厚度
與折射率的變化
圖3-23 摻磷實驗流程
圖3-24 LPD-SiOP的SIMS縱深分析圖
圖3-25 顯示LPD-SiOP不同濃度退火前後Si-O
峰值位置的變化情形
圖3-26顯示退火前後LPD-SiOP的FTIR頻譜圖
圖3-27 不同的六氟矽酸濃度對應於不同磷酸量
其成長速率的關係(a)不加硼酸；(b)加硼酸
圖3-28折射率隨六氟矽酸濃度及不同磷酸量
的變化情形。
圖3-29磷酸量對折射率與成長速率的影響。
圖3-30加入不同量的磷酸對於其氧化層中的有效電
荷密度Qeff與Vfb的關係
圖3-31加磷酸六氟矽酸濃度來成長LPD-SiOP
膜加以分析其漏電流

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