摘要:
在本論文中，我們已經成功地利用有機金屬氣相磊晶法( MOVPE )成長氮化物半導體並製造藍光發光二極體(LED)‧對於製造高性能的藍綠光發光二極體；如何成長出高品質的InxGa1-xN及p-型氮化鎵磊晶薄膜是一重要之課題‧當然；除了磊晶成長外，製程技術也對藍綠光發光二極體之性能具有顯著之影響，此關鍵製程技術包括p-型透明歐姆電極及氮化鎵系列半導體之乾蝕刻技術‧
在磊晶成長方面：對於製造高性能藍綠光發光二極體技術而言，元件級之InxGa1-xN磊晶薄膜及其相關之異質結構，是發展此技術之重點‧在我們的研究過程中發現，InxGa1-xN磊晶薄膜及其相關之異質結構之銦(Indium)含量及磊晶品質明顯受到成長溫度及成長壓力之影響‧在我們的MOVPE成長系統中，當成長溫度及成長壓力分別為780℃及300 torr時，可得到較高品質之InxGa1-xN磊晶薄膜及其相關之異質結構‧在LED製程方面︰我們採用極薄的鎳/金(Ni/Au)金屬層作為p-型透明歐姆電極，此極薄的鎳/金(Ni/Au)金屬層，在氮氣環境中經450℃熱處理過後具有83%之穿透率及1.710-2 -cm2之接觸電阻值‧另外；使用Cl2/Ar及Cl2/N2作為反應氣體之感應式耦合電漿(inductively coupled plasma ,ICP)乾蝕刻技術也被就ICP功率(ICP power)、壓力、反應氣體混合比及射頻功率(RF power)作一系列之研究，對於氮化鎵之蝕刻速率每分鐘可高達8000 A以上‧
根據先前磊晶及製程經驗，我們已經可以製造出商品化之多重量子井藍光發光二極體(MQW blue LED)‧典型的MQW blue LED具有九個週期之In0.3Ga0.7N/GaN量子井，在20 mA的驅動電流下其發光波長及半高寬分別為465 nm及30 nm‧此外；blue LED裸晶粒在20 mA的驅動電流下，具有約3.8 V之順向偏壓

Abstract:
In this dissertation, We have successfully fabricated the InGaN/GaN double heterostructure( DH ) and multiple quantum well( MQW ) blue light-emitting diodes( LEDs ) grown by metalorganic vapor-phase epitaxy( MOVPE ) technique. To fabricate the high performance LEDs emitted in blue-green region, the problems with the growth of InxGa1-xN films must be overcome. Besides the epitaxial layers growth, the processing technologies, including the formation of transparent p-type ohmic contacts and the dry etching of GaN also play an important role in devices performance.
In epitaxial layers growth, a key point in developing III-V nitride technology is the growth of device-grade InxGa1-xN alloys and their heterostructures for visible InGaN-based emitters. In this study, high-quality of InxGa1-xN alloys and their heterostructures has been grown by MOVPE at the temperature and pressure around 780℃ and 300 torr, respectively. In devices process, a light-transmitting Ni/Au Ohmic contacts to p-type GaN, alloyed at 450℃, typically exhibit a transmittance and specific contact resistance of 83% and 1.710-2 -cm2, respectively. InGaN based light emitting diodes with low operation voltage and high efficiency can be successfully fabricated by using this light-transmitting Ni/Au ohmic contacts. Alternatively, inductively coupled plasma etching of GaN was also examined in Cl2/Ar and Cl2/N2 etching gases as functions of ICP power, pressure, mixing ratio and RF power. Maximum etch rates of GaN in Cl2/N2 plasma and Cl2/Ar plasma of 8330 A/min and 8200 A/min have been achieved, respectively. According to previous embodiment, multi-quantum well blue LEDs, which consisting of 9-preiod of In0.3Ga0.7N/GaN MQW have been successfully fabricated with output power better than 1.5 mW(bare chip) at 20 mA and with a forward voltage less than 3.8 V. The peak wavelength and the FWHM of the typical EL spectra at 20 mA are around 465 nm and 30 nm, respectively.

COVER
Contents
Abstract(in Chinese )
Abstract(in English )
Acknowledgment
Tables Captions
Figures Captions
CHAPTER 1. INTRODUCTION
1.1 The Background of Research on Ⅲ-nitrides
1.2 Overview of this Dissertation
1.3 References
CHAPTER 2. METALORGANIC VAPOR PHASE EPITAXY SYSTEM
2.1 Introduction
2.2 MOVPE System
2.3 In Situ Monitoring of GaN Growth
2.4 References
CHAPTER 3. GROWTH AND CHARACTERIZATION OF SI- DOPED AND MG-DOPED GAN EPILAYERS
3.1 Effect of Buffer Layer Growth Temperature on the Properties of GaN
3.2 Growth of Si-doped GaN Epilayers
3.3 Growth of Mg-doped GaN Epilayers
3.4 Photoluminescence Study of Mg-doped GaN Epilayers
3.5 References
CHAPTER 4 GROWTH AND CHARACTERIZATION OF INxGA-xN EPITAXIAL LAYERS AND INxGA-xN/INyGA-yN MULTI-QUANTUM
WELL STRUCTURES
4.1 Introduction
4.2 Growth of lnxGa-xN Epilayers
4.3 Characterization of Si-doped and Si,Zn co-doped InxGa-xN on GaN
4.4 Characterization of Si, Mg co-doped InxGa-xN on GaN
4.5 Growth and Characterization of InxGa-xN/InyGa-yN Multi-Quantum Well Structures
4.6 References
CHAPTER 5. DEVICE PROCESSES
5.1 Study of Ti / Al Ohmic Contacts on Dry-Etched n-GaN Surfaces
5.2 The Effect of Thermal Annealing on the Ni/Au Contact of p-Type GaN
5.3 Transparent Contact to n- and p-GaN
5.3.1 High-Transparency Ni / Au Ohmic Contact to p-Type GaN
5.3.2 Effects of Thermal Annealing on the Indium Tin Oxide Schottky Contacts of n-GaN
5.3.3 The Indium Tin Oxide Ohmic Contacts to Highly doped n-GaN
5.4 Inductively Coupled Plasma Etching of GaN Using Cl/ArNGases
5.5 References
CHAPTER 6. GROWTH AND CHARACTERIZATION OF INxGA-xN/GAN LIGHT EMITTING DIODES
6.1 Introduction
6.2 InxGa-xN/GaN DH Blue LEDs Light-Emitting Diodes.
6.3 InxGa-xN/GaN Multi-Quantum Well Light-Emitting Diodes
6.4 White Light LEDs
6.5 References
CHAPTER 7. CONCLUSIONS
Publication List
Publication List
Vita

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