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研究生:柯武宏
研究生(外文):Wu Hung Ko
論文名稱:矽基材化學機械拋光製程參數之研究
論文名稱(外文):Study on Process Parameters of Chemical Mechanical Polishing of Silicon Substrate
指導教授:李榮顯李榮顯引用關係
指導教授(外文):Rong Shean Lee
學位類別:碩士
校院名稱:國立成功大學
系所名稱:機械工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:61
中文關鍵詞:化學機械拋光移除率模式化學參數矽晶圓製程參數切削力
外文關鍵詞:Chemical Mechanical Polishing(CMP)removal rate modelchemical parameterssilicon waferprocessing parameterslateral force
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最近幾年來,在IC製程0.25微米以下,化學機械拋光技術(CMP)已被公認為可製造出高平坦與高度光亮表面,唯有如此,才能達到較嚴格的光學平坦度要求。
為了瞭解矽基材化學機械拋光製程參數的影響,規劃了兩個實驗進行研究,第一個實驗以L18直交表探討速度、壓力、時間、PH值等製程參數對移除率、均勻度、粗糙度的平均影響,達到以較少的實驗得到較全面性結果的目的。第二個實驗將利用可監測切削力的磨耗機,進行壓力、PH值、溫度三個製程參數對於切削力影響的實驗,藉以探討晶圓表面的切削現象,進而瞭解矽基材化學機械拋光的製程。
建立一個CMP製程之移除率模式是非常重要的,如此才能精確的控制拋光移除量,目前已有的模式均著重在機械參數的探討,而忽略了化學反應的參數,所以此研究也提出一個具化學反應參數之移除率預測模式,並根據實驗結果經迴歸分析,來獲得移除率預測模式中的未定係數,最後將預測值與實驗值做比較,以評估所提出模式之精確度。
Recently , the chemical-mechanical polishing(CMP) technique has been widely recognized as a method for the production of highly planar and reflective surface that meets the more stringent lithographic requirement of planarity for sub 0.25 micrometer IC processes.
In this study , two experiments are designed to find the effect of process parameters. First , the L18 table of Taguchi method is used to investigate the average effect of process parameters , such as velocity , pressure , processing time and PH value on removal rate , uniformity , and roughness. Therefore , less samples are needed to obtain the general results. The second experiment is performed to find the effect of pressure , PH value and temperature on lateral force by the wear testing machine equipped with a load cell to monitor lateral force. The surface polishing phenomenon is discussed further to know more about this process.
It is necessary to establish a removal rate model , that the removed quantity of polishing could be controlled precisely. Up to date , most of those models focused on the effect of mechanical parameters but the chemical effect was neglected. Therefore , this research proposes a removal rate model which includes chemical parameters. After the regression analysis , those undetermined coefficients are obtained. Finally , the predicted CMP removal rate is compared with the experimental removal rate to evaluate the accuracy of the proposed model.
中文摘要…………………………………………………………I
英文摘要…………………………………………………………II
誌謝………………………………………………………………IV
目錄………………………………………………………………V
表目錄……………………………………………………………VII
圖目錄……………………………………………………………VIII
符號說明…………………………………………………………X
第一章 導論………………………………………………………1
1-1、前言…………………………………………………………1
1-2、簡介…………………………………………………………2
1-3、文獻回顧……………………………………………………4
1-4、本文研究範疇………………………………………………10
第二章 矽基材移除率模式之建立………………………………11
2-1、矽基材之移除機制…………………………………………11
2-2、移除率模式之建立…………………………………………11
第三章 實驗規劃及進行…………………………………………16
3-1、使用設備及材料……………………………………………16
3-2、試片製備……………………………………………………18
3-3、實驗一規劃與步驟…………………………………………19
3-4、實驗二規劃與步驟…………………………………………23
第四章 結果與討論………………………………………………26
4-1、計算分析……………………………………………………26
4-2、結果…………………………………………………………27
4-3、製程參數對實驗結果的影響………………………………29
4-3-1、製程參數對移除率的影響與探討……………………31
4-3-2、製程參數對不均勻度的影響與探討…………………33
4-3-3、製程參數對粗糙度的影響與探討……………………34
4-3-4、製程參數對整體效果的影響與探討…………………35
4-3-5、製程參數對切削力矩的影響與探討…………………37
4-4、厚度移除率的預測與探討…………………………………46
4-4-1、迴歸分析………………………………………………46
4-4-2、預測值與實驗值比較…………………………………48
4-4-3、實驗誤差之討論……..…………………………………52
第五章 結論與建議………………………………………………54
5-1、結論…………………………………………………………54
5-2、建議…………………………………………………………54
參考文獻…………………………………………………………56
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