最近幾年來，在IC製程0.25微米以下，化學機械拋光技術（CMP）已被公認為可製造出高平坦與高度光亮表面，唯有如此，才能達到較嚴格的光學平坦度要求。
為了瞭解矽基材化學機械拋光製程參數的影響，規劃了兩個實驗進行研究，第一個實驗以L18直交表探討速度、壓力、時間、PH值等製程參數對移除率、均勻度、粗糙度的平均影響，達到以較少的實驗得到較全面性結果的目的。第二個實驗將利用可監測切削力的磨耗機，進行壓力、PH值、溫度三個製程參數對於切削力影響的實驗，藉以探討晶圓表面的切削現象，進而瞭解矽基材化學機械拋光的製程。
建立一個CMP製程之移除率模式是非常重要的，如此才能精確的控制拋光移除量，目前已有的模式均著重在機械參數的探討，而忽略了化學反應的參數，所以此研究也提出一個具化學反應參數之移除率預測模式，並根據實驗結果經迴歸分析，來獲得移除率預測模式中的未定係數，最後將預測值與實驗值做比較，以評估所提出模式之精確度。

Recently , the chemical-mechanical polishing(CMP) technique has been widely recognized as a method for the production of highly planar and reflective surface that meets the more stringent lithographic requirement of planarity for sub 0.25 micrometer IC processes.
In this study , two experiments are designed to find the effect of process parameters. First , the L18 table of Taguchi method is used to investigate the average effect of process parameters , such as velocity , pressure , processing time and PH value on removal rate , uniformity , and roughness. Therefore , less samples are needed to obtain the general results. The second experiment is performed to find the effect of pressure , PH value and temperature on lateral force by the wear testing machine equipped with a load cell to monitor lateral force. The surface polishing phenomenon is discussed further to know more about this process.
It is necessary to establish a removal rate model , that the removed quantity of polishing could be controlled precisely. Up to date , most of those models focused on the effect of mechanical parameters but the chemical effect was neglected. Therefore , this research proposes a removal rate model which includes chemical parameters. After the regression analysis , those undetermined coefficients are obtained. Finally , the predicted CMP removal rate is compared with the experimental removal rate to evaluate the accuracy of the proposed model.

中文摘要…………………………………………………………I
英文摘要…………………………………………………………II
誌謝………………………………………………………………IV
目錄………………………………………………………………V
表目錄……………………………………………………………VII
圖目錄……………………………………………………………VIII
符號說明…………………………………………………………X
第一章 導論………………………………………………………1
1-1、前言…………………………………………………………1
1-2、簡介…………………………………………………………2
1-3、文獻回顧……………………………………………………4
1-4、本文研究範疇………………………………………………10
第二章 矽基材移除率模式之建立………………………………11
2-1、矽基材之移除機制…………………………………………11
2-2、移除率模式之建立…………………………………………11
第三章 實驗規劃及進行…………………………………………16
3-1、使用設備及材料……………………………………………16
3-2、試片製備……………………………………………………18
3-3、實驗一規劃與步驟…………………………………………19
3-4、實驗二規劃與步驟…………………………………………23
第四章 結果與討論………………………………………………26
4-1、計算分析……………………………………………………26
4-2、結果…………………………………………………………27
4-3、製程參數對實驗結果的影響………………………………29
4-3-1、製程參數對移除率的影響與探討……………………31
4-3-2、製程參數對不均勻度的影響與探討…………………33
4-3-3、製程參數對粗糙度的影響與探討……………………34
4-3-4、製程參數對整體效果的影響與探討…………………35
4-3-5、製程參數對切削力矩的影響與探討…………………37
4-4、厚度移除率的預測與探討…………………………………46
4-4-1、迴歸分析………………………………………………46
4-4-2、預測值與實驗值比較…………………………………48
4-4-3、實驗誤差之討論……..…………………………………52
第五章 結論與建議………………………………………………54
5-1、結論…………………………………………………………54
5-2、建議…………………………………………………………54
參考文獻…………………………………………………………56

1. Achuthan,K., J.Curry, M.Lacy, D.Campbell, S.V.Babu, "Investigation of Pad Deformation and Conditioning During the CMP of Silicon Dioxide Films", Journal of Electronic Materials, Vol.25, No.10, pp.1628-1632, 1996.
2. Ali,I., S.R.Roy, G.Shinn, "Chemical-Mechanical Polishing of Interlayer Dielectric： A Review", Solid State Technology, pp.63-68, October 1994.
3. Chang,C.Y., S.M.Sze, "ULSI Technology", McGraw-Hill, pp.433-444, 1996.
4. Chou,C.C., J.F.Lin, S.T.Chen, "Models for Temperature-Kinetic Aspect of Friction and Wear in Oil Lubrication", J. of Tribology, Trans. ASME, Vol.121, pp.1-13, July 1999（to appear）.
5. Collines,G.J., G.Williams, "Controlling CMP with Atomic Force Microscopy", Solid State Technology, pp.99-103, March 1996.
6. Cook,L.M., "Chemical Process in Glass Polishing", Journal of Non-Crystalline Solids, Vol.120, pp.152-171, 1990.
7. Jairath,R., J.Farkas, C.K. Huang, M.Stell, S.M.Tzeng, "Chemical-mechanical polishing : Process manufacturability", Solid State Technology, pp.71-P75, July 1994.
8. Kaufman,F.B., D.B.Thompson, R.E.Broadie, M.A.Jaso, W.L.Guthrie, D.J.Pearson, M.B.Small, "Chemical-Mechanical Polishing for Fabrication Patterned W Metal Features as Chip Interconnects", J. Electrochem. Soc., Vol.138, NO.11, pp.3460-3464, November 1991.
9. Liu,C.W., "Modeling of the Wear Mechanism during Chemical-Mechanical Polishing", J. Electrochem. Soc., Vol.143, No.2, pp.716-721, February 1995.
10. Liu,C.W., B.T.Dai, C.F.Yeh, "Characterization of the Chemical-Mechanical Polishing Process Based on Nanoindentation Measurement of Dielectric Films", J. Electrochem. Soc., Vol.142, No.9, pp.3098-3104, September 1995.
11. Mahaian,U, M.Biemann, R.K.Singh, "Dynamic Lateral Force Measurements during Chemical Mechanical Polishing of Silica", http://www3.electrochem.org/letters/Feb99/lett98-07-012.html.
12. Martinez,M.A., "Chemical-Mechanical Polishing： Route to Global Planarization", Solid State Technology, pp.26-31, May 1994.
13. Ni,C.T., H.C.Chen, D.Huang, T.Chang, "A Study of CMP Slurry Chemistry Effect on BPSG Film for Advanced DRAM Application", Proceedings, Third International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, pp.343-350, Santa Clara, CA, U.S.A., 1998.
14. Patrick,W.J., W.L.Guthrie, C.L.Standley, P.M.Schiable, "Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections ", J. Electrochem. Soc., Vol.138, No.6, pp.1778-1784, June 1991.
15. Pietsch,G.J., G.S.Higashi, Y.J.Chabal, "Chemomechanical Polishing of Silicon: Surface Termination and Mechanism of Removal", Appl. Phys. Lett., Vol.64, No.23, pp.3115-3117, 6 June 1994.
16. Pietsch,G.J., Y.J.Chabal, G.S.Higashi, "The Atomic-Scale Removal Mechanism during Chemo-mechanical Polishing of Silicon of Si（100） and Si（111）", Surface Science 331-333, pp.395-401, 1995.
17. Preston,F.W., "The Theory and Design of Plate Glass Polishing Machines", J. Soc. Glass Technology, Vol.11, PP.214-256, 1927.
18. Rozycki,C., "Comparison of Method of Determining Arrehenius Equation Parameters by the Least Squares Method", Journal of Thermal Analysis, Vol.29, NO.5, pp.956-963, 1984.
19. Runnels,S.R., L.M.Eyman, "Tribology Analysis of Chemical-Mechanical Polishing", J. Electrochem. Soc., Vol.141, No.6, pp.1698-1701, June 1994.
20. Runnels,S.R., "Feature-Scale Fluid-Based Erosion Modeling for Chemical-Mechanical Polishing", J. Electrochem. Soc., Vol.141, No.7, pp.1900-1904, July 1994.
21. Schaffer,W.J., H.W. Fry, "BPSG Improves CMP Performance for Deep Submicron Ics", Semiconductor International, pp.205-212, July 1996.
22. Shi,F.G., B.Zhao, "Modeling of chemical-mechanical polishing with soft pads", Applied Physics A : Materials Science & Processing , Vol.67, No.2, pp.249-252, August 1998.
23. Singer,P., "Chemical-mechanical Polishing : A New Focus on Consumables", Semiconductor International, pp.48-52, February 1994.
24. Singer,P.H., "Search for Perfect Planarity", Semiconductor International, pp.44-48, March 1992.
25. Sivaram,S., H.Bath, R.Leggett, A.Maury, K.Monnig, R.Tolles, "Planarizing Interlevel Dielectrics by Chemical-Mechanical Polishing", Solid State Technology, pp.87-91, May 1992.
26. Sugimoto,F., Y.Arimoto, T.Ito, "Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Plishing of Silicon Dioxide Layer", Jpn. J. Appl. Phys., Vol.34, Part 1, No.12A, pp.6314-6320, December 1995.
27. Tseng,W.T., "Re-examination of Pressure and Speed Dependence of Removal Rate during Chemical-Mechanical Polishing Processes", J. Electrochem. Soc., Vol.144, No.2, pp.L15-L17, February 1997.
28. Tseng,W.T., Y.T.Hsieh, C.F.Lin, M.S.Tsai, M.S.Feng, "Chemical-Mechanical Polishing and Material Characteristics of Plasma-Enhanced Chemically Vapor Deposited Fluorinated Oxide Thin Films ", J. Electrochem. Soc., Vol.144, No.3, pp.1100-1106, March 1997.
29. Venkatesh,V.C., I.Inasaki, H.K.Toenshof, T.Nakagawa, I.D.Marinescu, "Observations on Polishing and Ultraprecision Machining of Semiconductor Substrate Materials", Annals of the CIRP, Vol.44/2, pp.611-618, 1995.
30. Yasseen,A.A., N.J.Mourlas, M.Mehregany, "Chemical-Mechanical Polishing for Polysilicon Surface Micromachining", J. Electrochem. Soc., Vol.144, No.1, pp.237-242, January 1997.
31. Yoon,B.U., Y.R.Park, I.K.Jeong, C.L.Song, M.Y.Lee, "The Effects of Platen and Carrier Rotational Speeds on Within Wafer Non-Uniformity of CMP Removal Rate", Proceedings, Third International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, pp.193-197, Santa Clara, CA, U.S.A., 1998.
32. Zhang,F., A.Busnaina, "Role of Particle Adhesion and Surface Deformation in Chemical Mechanical Polishing Processes", Electrochemical and Solid-State Letters, Vol.1, No.4, pp.184-187, October 1998.
33. 莊達人, "VLSI製造技術", 高立圖書有限公司, pp.428-444, 1997年三版.
34. 黃家雯, "研磨粉體對二氧化矽薄膜之化學機械研磨特性研究", 國立交通大學材料科學與工程研究所碩士論文, 1998.
35. 歐沐怡, "矽材質化學機械研磨製程及清洗之研究", 國立中興大學電機工程研究所碩士論文, 1998.
36. 蘇朝敦, "產品穩健設計", 中華民國品質學會, pp.37-60, 1997年初版.