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研究生:郭啟文
論文名稱:以活性離子刻磷化銦鎵/砷化銦鎵/磷化銦鎵假晶性高電子移動率電晶體之研製
論文名稱(外文):Study and fabrication of InGaP/InGaAs/InGaP Pseudomorphic HEMTs by reactive ion etching
指導教授:蘇炎坤蘇炎坤引用關係
學位類別:博士
校院名稱:國立成功大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:87
語文別:中文
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COVER
CONTENTS
Abstract
Table Captions
Figure Captions
Chapter 1. Introduction
Chapter 2. Theory ofHEMTs and Characteristics of2DEG System in PHEMT
2-1 Introduction
2-2 Two-dimensional Electron GasCharge Control Schottky Barrier Gate
2-3 The Charge-Control Model
2-3.1 DC Characteristics
2-3.2 Microwave Characteristics
2-4 The Investigation of2-DEG by Specialization Measurement
2-4,1 Device structure
2-4.2 Photoreflectance Measurement
A. Introduction
B. Experimental
C. Analysis
D. Short Conclusion
2-4.3 Shubnikov-de Haas (SdH) Measurement
A. Introduction
B. Two-dimensional Electron Gas (2-DEG) In GaInAs
C. Experiments and Results
2-4.4 Summary
Chapter 3. Geometric Study of Reactive Ion Etching of Thin Film
3-1 Introduction
3-2 System Configurations
3-3 Principle of Reactive Ion Etching
3-3.1 Ion Bombardment
3-4 Experiments
3-5 Results and Discussion
3-5.1 Etching Rate Study of BCl3/Ar Discharge
3-5.2 Profile Study by SEM Micrographs
3-5.3 Surface Roughness Study by Atomic Force Microscopy
3-5.4 Surface Residual Study by AES
3-6 Summary
Chapter 4. The Study of Plasma-Induced Surface Damage on PHEMTs and InAlAs
4-1 Introduction
4-2 Experiment
4-3 Photoreflectance Measurement and Near Surface Damage
4-4 Raman Measurement and Near Surface Damage
4-5 Raman and Photoreflectance Characterization of InAlAs surface Damage by CH4/H2/Ar Plasma
4-5.1 Introduction
4-5.2 Experimental
4-5.3 Results and Discussion
4-6 Summary
Chapter 5. Fabrication and Results of PHEMTs
5-1 Introduction
5-2 Device Fabrication Process
5-2.1 Selecting gate direction
5-2.2 Mesa Isolation
5-2.3 Drain and Source Ohmic Contacts
5-2.4 Gate Schottky Contacts
A. Wet Etching Technique
B. Dry Etching Technique
5-3 Pseudomorphic InGaP/InGaAs/InGaP HEMTs Characteristics
5-3.1 DC Characteristics
5-3.2 Microwave Characteristics
5-3.3 Uniformity of DC and Microwave Characteristics
5-4 High-Frequency Equivalent Circuit ofPseudomorphic InGaP/InGaAs/InGaP HEMTs by Different Etching Process.
5-4.1 Introduction
5-4.2 Theoretical Analysis
5-4.3 Experiments and Results
5-5 Summary
Chapter 6. Conclusion and Expectation
6-1 Conclusion
6-2 Expectation
REFERENCES
FIGURES
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