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研究生:施鴻民
研究生(外文):Shih Hung-Ming
論文名稱:塑膠基板上半導體元件之試作
論文名稱(外文):Production of Semiconductor Devices on Plastics
指導教授:葉清發
指導教授(外文):Prof. Ching-Fa Yeh
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:英文
論文頁數:95
中文關鍵詞:塑膠基板陽極氧化金屬-絕緣層-金屬二極體
外文關鍵詞:plastic substrateanodic oxidationMIM diodes
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近年來,現代化家電用品的需求日增,使得大、小尺寸的液晶顯示器應用範圍越來越為廣泛。以大面積以及高畫素密度的主動式矩陣液晶顯示器而言,低於400℃的鋁閘極複晶矽薄膜電晶體乃是最佳的選擇;主要是因為使用了低阻值的鋁。除此之外,塑膠基板液晶顯示器也適於此產品演進的發展趨勢。塑膠基板有量輕、形薄、以及不易摔壞的優點。然而,於塑膠基板上製作半導體元件的技術發展尚未成熟。在本研究裡,我們探討了幾項關於在塑膠基板上製作半導體元件的關鍵技術:包括塑膠基材的選取、陽極氧化系統的建立以及金屬薄膜於基板上的沈積。
眾多基板經由物化性的充分檢驗,選擇出由日本JSR公司所出產之ARTON基板來進行實驗。另外,由於低溫製程的訴求及較佳的絕緣層特性,在塑膠基板製作金屬-絕緣層-金屬(MIM)二極體的最佳選擇是採用以陽極氧化法所形成的五氧化二鉭(Ta2O5)薄膜。鉭(Ta)金屬薄膜在基板上龜裂的現象為實驗初期最大挑戰。利用鈦(Ti)薄金屬層介於鉭金屬層及氧化層之間來增進薄膜的附著力,終於我們在塑膠基板上製作出以陽極氧化五氧化二鉭(Ta2O5)薄膜為絕緣層之金屬-絕緣層-金屬二極體(MIM diodes)。製程中所產生的應力對元件製作有相當大的影響。因此在塑膠基板的處理和製程條件都要非常小心仔細,才能製造高良率的塑膠基板顯示器。最後,我們設計一系列的信賴性測試來評估元件的穩定性,包括:溫度測試,濕度測試,曝曬測試及震動測試。並針對量測到的結果加以討論。

In recent years, increasing requirement of modern household appliances promote the application range of small or large size Liquid Crystal Displays (LCDs) extensively. Low temperature (< 400oC) Al-gate poly-Si TFTs is the most promising candidate for large-size and high pixel-density AMLCDs because of low resistivity. Besides, polymer-film LCDs (PFLCDs) are also adequate for the tendency of product improvement. Plastic substrates have the advantages of light-weighted, thin-shaped and not-so-easily-broken characteristics. But the technologies of producing semiconductor devices on plastics are not mature yet. In this research, several key technologies about fabricating semiconductor devices on plastics including selection of plastic substrates, setup of anodic oxidation system and metal thin film deposition on plastics are investigated.
We selected the ARTON plastic film produced by JSR Corporation to carry out the following experiments after testing out the physical and chemical properties of various plastics. Further, the best candidate for active matrix addressing on plastics is Metal-Insulator-Metal (MIM) diodes with anodic Ta2O5 as insulator because of low temperature and good dielectric properties. In the beginning of the experiments, It's the biggest challenge that peeling effect upon Ta film deposited on plastics. Depositing a thin Ti film between Ta and oxide layer to improve adhesion. Hence, the MIM devices with anodic tantalum oxide on plastics are finally fabricated. Due to process induced stresses that have large influences on devices fabrication, special care should be taken to substrate handling practices and to process conditions in order to produce robust plastic displays at high yield. Eventually, we design a series of reliability tests for evaluation of device stability which include temperature tests, humidity test, exposure tests and shoch tests. Then we discuss the results measured form the experiments.

Abstract (Chinese)I
Abstract (English) III
Acknowledgements V
Contents VI
Table Captions IX
Figure Captions X
Chapter 1 Introduction1
1.1 General Background and Motivation1
1.2 Organization of Thesis2
Chapter 2 Characterization of the Plastic Substrates5
2.1 Introduction5
2.2 Characterization of Plastic Substrates 7
2.2.1Thermal Stability of Plastic Substrates 7
2.2.2Surface Roughness Conditions of Plastics 8
2.2.3Chemical Resistance of Plastic Substrates 8
2.3 Summary9
Chapter 3 Metal-Insulator-Metal (MIM) Diode with Anodic Ta2O5
Insulator on Plastic Substrate11
3.1 Introduction11
3.2 Formation of Anodic Ta2O5 Insulator11
3.2.1 Anodic Oxidation System Setup12
3.2.1.1 Selection of Electrolyte12
3.2.1.2 Constant Anodic Voltage and Constant Anodic Current
Mode during Anodization13
3.2.2 Experiment of Fabrication Anodic Ta2O5 Insulator13
3.2.3 Results and Discussions14
3.2.3.1 Growth Rate of Anodic Tantalum Oxide Film14
3.2.3.2 I-V Characteristics of Anodic Tantalum Oxide Fi15
3.3 Fabrication of MIM Diodes on Plastic Substrates16
3.3.1 Process Flows of MIM diodes on Plastic Substrate16
3.3.2 Peeling Effect of Fabricating MIM diodes on Plastics18
3.4 Results and Discussions19
3.4.1 I-V Characteristics of MIM diode on the ARTON substrate 19
3.4.2 Image Sticking Effect 20
3.5 Summary21
Chapter 4 Reliability Tests for Plastic Substrate Metal-Insulator-Metal Active Diodes with Anodic Ta2O5 Insulator23
4.1 Introduction23
4.2 Reliability Tests of Plastic Substrate MIM diode24
4.2.1 Experimental Procedures24
4.2.1.1 Temperature Endurance Tests of Plastic Substrate MIM
diode24
4.2.1.2 Humidity Endurance Test of Plastic Substrate MIM diode25
4.2.1.3 Exposure Endurance Tests of Plastic Substrate MIM diode
26
4.2.1.4 Shock Endurance Tests of Plastic Substrate MIM diode
27
4.2.2 Results and Discussions28
4.2.2.1 Discussions of Temperature Endurance Tests28
4.2.2.2 Discussions of Humidity Endurance Test28
4.2.2.3 Discussions of Exposure Endurance Tests29
4.2.2.4 Discussions of Shock Endurance Tests30
4.3 Summary31
Chapter 5 Conclusions 34
References75
Vita78
Publications79

Chapter 1
[1.1] P. G. Carey, P. M. Smith, M. O. Thompson, and T. W. Sigmon, "Polysilicon Thin Film Transistors Fabricated at 100 oC on a Flexible Plastic Substrate," IDRC97', p. 58, 1997.
[1.2] N. D. Young, D. J. McCulloch and R. M. Bunn, "Displays and Microelectronics on Polymer Substrates," AMLCD97', p. 47, 1997.
[1.3] D. P. Gosain, J. Westwater, and S. Usui, "Excimer Laser Crystallization and Doping of a-Si Sputtered Below 100oC," AMLCD97', p. 51, 1997.
Chapter 2
[2.1] P. G. Carey, P. M. Smith, M. O. Thompson, and T. W. Sigmon, "Polysilicon Thin Film Transistors Fabricated at 100oC on a Flexible Plastic Substrate," Conf. Record 1997 IDRC, p. 58, 1997.
[2.2] N. D. Young, D. J. McCulloch and R. M. Bunn, "Displays and Microelectronics on Polymer Substrates," AMLCD97', p. 47, 1997.
[2.3] D. P. Gosain, J. Westwater, and S. Usui, "Excimer Laser Crystallization and Doping of a-Si Sputtered Below 100 oC," AMLCD97', p. 51, 1997.
[2.4] A. Stein, A. Liss, S. Fields, " High-Temperature Acrylic Plastic Substrates: Thermal, Chemical, and Mechanical Properties," SID97' Digest, p. 817, 1997.
[2.5] E. Lueder, " Trends of Research in Active Addressing of LCDs," Mat. Res. Soc. Symp. Proc., vol. 377, p. 847, 1995.
[2.6] S. D. Theiss, P. G. Carey, P. M. Smith, P. Wickboldt and T. W. Sigmon "PolySilicon Thin Film Transistors Fabricated at 100℃ on a Flexible Plastic Substrate," International Electron Devices Meeting, , IEDM, pp257 -260, 1998.
[2.7] Daniel B. Thomasson, Mathias Bonse, Jiunn-Ru Huang, Christopher R. Wronski and Thomas N. Jackson "Tri-layer a-Si:H Integrated Circuits on Polymeric Substrate," International Electron Devices Meeting, , IEDM, pp253 -256, 1998.
[2.8] Goodfellow catalogue 1996/1997.
[2.9] Y. Hara, H. Shinohara "New Film Materials Made of ARTON for LCD Application," Japan Synthetic Rubber Co., Ltd.
Chapter 3
[3.1] Y. Y. Chen, "Ta2O5 Thin Films by Anodic Oxidation," Master Thesis, Institute of Material Science and Engineering, National Chiao-Tung University, 1995.
[3.2] U. Schneider, R. Bauerle, E. Lueder, T. Kallfass, E. Ginter, R. Harjung, " A 10 in. MIM-PDLC Display with Improved MIMs for Higher Voltage," AsiaDisplay95', p. 27, 1995.
[3.3] T. Nakamura, S. Kemagami, and H. Morita, " Effect of Top Electrode Material on the I-V Characteristics in MIM Elements," AsiaDisplay95', p. 23, 1995.
[3.4] T. Hirai, K. Miyake, T. Nakamura, S. Kamigumi, and H. Morita, " Afterimage Improvement for Thin-Film-Diode (TFD) Liquid-Crystal-Display Utilizing Tantalum Anodic Oxidation in Ammonium Borate Solution," Jpn. J. Appl. Phys., vol. 31, part 1, no. 12B, p. 4582, 1992.
[3.5] J. S. Liu, " Application of Anodic Oxidation to MIM Diode and Polyoxide Device," Master Thesis, Institute of Electronics, National Chiao-Tung University, 1997.
[3.6] H. Morita, K. Tadokoro, S. Kamagami, K. Sunohara, T. Iizuka, and Y. Abe, Tech. Dig. Japan-Korea Joint Symp. Information Display, p. 107, 1991.
[3.7] J. G. Simmons, "Poole-Frenkel Effect and Schottkey Effect in Metal-Insulator- Metal Systems," Phys. Rev., vol. 155, no. 3, p. 657, 1967.
[3.8] N. D. Young, D. J. McCulloch and R. M. Bunn, "Displays and Microelectronics on Polymer Substrates," AMLCD97', p. 47, 1997.
Chapter 4
[4.1] 松本正一, 角田市良, "液晶之基礎與應用," 1996.
[4.2] 何榮華,"彩色液晶顯示器驅動電路之設計," 交通大學碩士論文,1994,
[4.3] J. Y. Jao, "Application of Anodic Oxidation Technology to Al-gate Poly-SiTFTs and MIM Diodes, "p107, 1998.

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