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研究生:王超群
研究生(外文):Chau-Chiung Wang
論文名稱:Ta-based障礙層在Cu/PAE-2(lowk)/Si之熱穩定性研究
論文名稱(外文):Thermal Stability of Cu/PAE-2(low k)/Si with and without Ta-based Barrier Layers
指導教授:陳茂傑
指導教授(外文):Mao-Chieh Chen
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:86
中文關鍵詞:擴散障礙層低介電係數材料多層金屬連線加溫加壓電信量測
外文關鍵詞:CuTaN diffusing barrierlow dielecric material PAE-2multilevel metallizationBTS measurement
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本論文主要研究低介電常數材料PAE-2 之熱穩定性與電特性。吾人利用橢圓測厚儀得知PAE-2薄膜的介電長數值約為2.9,PAE-2薄膜的熱穩定性可達450℃左右。在與銅金屬的整合方面,吾人研究Cu/PAE-2/Si 系統的熱穩定性可達200℃,另外也對鉭(Ta)及氮化鉭(TaN)等擴散障礙層應用於Cu/Ta/PAE-2/Si 與Cu/TaN/PAE-2/Si 結構的熱穩定性加以探討。研究結果發現Ta及TaN擴散障礙層可分別提高Cu/barrier/PAE-2/Si結構之熱穩定性200及250℃。再者,吾人使用電容-電壓與加溫偏壓法來研究Al/PAE-2/SiO2/Si與Cu/PAE-2/SiO2/Si結構之熱穩定性,發現在PAE-2薄膜內含有可移動的正負離子。在材料分析方面,吾人利用掃描式電子顯微鏡、二次離子質譜儀、X光繞射分析、與TDS分析來探討PAE-2的劣化原因。

This thesis investigates the thermal stability and electrical properties of the low-k dielectric material of PAE-2 film. The dielectric constant of the PAE-2 film was determined to be 2.9 and the PAE-2 film was thermally stable up to 450oC. The thermal stability of the Cu/PAE-2/Si system is up to 200oC and the effects of Ta and TaN diffusion barrier sandwiched between Cu and PAE-2 layer were investigated using the technique of I-V measurement. It is found that the use of Ta and TaN barriers raised the thermal stability temperature of the system by 200 and 250oC, respectively. Thermal stability of the Cu/PAE-2/SiO2/Si structure was also investigated using the technique of C-V measurement and the bias temperature stress (BTS). It is found that large amount of positive and negative mobile ions were presented in the PAE-2 layer, causing large voltage shift of the C-V curve after BTS stress. Material analyses of SEM, SIMS, XRD, and TDS measurement were used to investigate the degradation mechanism of these MIS capacitors.

Contents
Abstract (Chinese) ----------------------------------------叫
Abstract (English) ----------------------------------------另
Acknowledgement -------------------------------------------只
Contents --------------------------------------------------史
Table Captions --------------------------------------------台
Figure Captions -------------------------------------------句
Chapter 1 Introduction ------------------------------------1
1.1 General Background --------------------------1
1.2 Copper Metallization ------------------------2
1.3 Low-K Dielectrics Application ---------------3
1.4 Thesis Organization -------------------------5
Chapter 2 Basic property of PAE-2 thin film --------------6
2.1 Introduction --------------------------------6
2.2 Poly (arylene ether) PAE-2 film -------------9
2.3 Results and Discussion ----------------------9
2.3.1 Thickness and Refractive index ---------10
2.3.2 Dielectric Constant -------------------11
2.4 Conclusion ----------------------------------14
Chapter 3 Thermal stability of Cu/PAE-2/Si system and the
effects of Ta-based diffusion barrier -----------15
3.1 Introduction --------------------------------15
3.2 Samples Preparation -------------------------15
3.3 Electrical Measurement ----------------------19
3.3.1 Al/PAE-2/Si and Cu/PAE-2/Si -----------19
3.3.2 TaN/Cu/Ta(25nm)/PAE-2/Si --------------20
3.3.3 TaN/Cu/TaN(25nm)/PAE-2/Si -------------20
3.4 Material Analysis ---------------------------21
3.4.1 SEM -----------------------------------22
3.4.2 SIMS Analysis -------------------------23
3.4.3 XRD Analysis --------------------------24
3.4.4 TDS Analysis --------------------------24
3.5 Conclusion ----------------------------------25
Chapter 4 Thermal stability of Al/PAE-2/SiO2/Si and TaN/Cu/PAE-
2/SiO2/Si system --------------------------------27
4.1 Introduction --------------------------------27
4.2 Sample Preparation --------------------------27
4.3 Results -------------------------------------29
4.3.1 Electrical Measurements ---------------29
4.3.2 Bias Temperature Stress (BTS) Measurement
-----------------------------------------30
4.3.2.1 Al/PAE-2/SiO2/Si structure MIS
capacitor ---------------------32
4.3.2.2 TaN/Cu/PAE-2/SiO2/Si structure
capacitor ---------------------33
4.3.3 Material Analysis ---------------------34
4.4 Conclusion ----------------------------------35
Chapter 5 Summary -----------------------------------------36
References ------------------------------------------------38

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