臺灣博碩士論文加值系統

本實驗是探討熱輻射感測器中的熱敏阻製程,實驗中以CMOS製程中的鈦金屬薄膜作為熱敏阻材料。實驗目地以尋找高TCR且符合CMOS製程為目標。本實驗嘗試兩種作法,一是鈦金屬膜在高真空環境下蒸鍍後在通氮氣的環境下進行快速熱退火。另一是在鈦金屬膜上以PE-oxide作為覆蓋層,之後再進行爐管退火。前者TCR最高為0.18%/℃,後者經過四小時退火後TCR維持在0.21%/℃。最後用一脈波產生電路對第二種製程所製作的弓形電阻(TCR=0.14%/℃)進行可靠度測試,在經過三億次的觸發後TCR從0.14%/℃變成0.125%/℃。

This research is using titanium of CMOS process as a thermister.The aim of research is to search high TCR and process compatible with CMOS process.We try two process;one is rapid thermal annealing in nitrogenous after Titanium deposited in high vaccum system ;The other is annealed after deposited SiO2.The best result of first process is 0.18%/℃,and the best result of second process is 0.21%/℃.We use a circuit generated square wave to trigger a device made by second process.After three hundred million trigger,the TCR value varies from 0.14%/℃ to 0.125%/℃.

目 錄
第 一 章 緒 論….…………………………………………………...1
第 二 章 原 理……………………………………...………………4
2-1 熱輻射偵測之原理…………………………………………….4
2-2 阻障層探討……………………………………………………..6
第 三 章 實 驗………………….……………………………………9
3-1 鈦金屬膜快速熱退火…………………………….………… 10
3-2 鈦金屬膜覆蓋SiO2退火之各種樣品製作……………….…10
3-3 樣品量測……………………………………………………..14
3-4 可靠度實驗…………………………………………………..14
第 四 章 結果與討論………………………………………………….16
4-1 鈦金屬膜快速熱退火之結果………………………………..16
4-2 鈦金屬膜覆蓋SiO2退火之結果……………………………17
4-3 可靠度實驗之結果…………………………………………..18
第 五 章 結 論……………………………………………………..20

參 考 文 獻
[1] 周正三,"熱導型壓力微感測器"國立交通大學光電工程研究所博士論文,1997.
[2] 吳俊毅,"退火處理對Ti/SiO2/Si結構之退化現像研究",國立交通大學電子研究所碩士論文.
[3] . 翁炳國,"矽之微細加工技術及應用",國立交通大學光電研究所碩士論文.
[4] 王盧正,"大角度紅外線感測器之製作",國立交通大學電子物理研究所碩士論文
[5] OKUBASCHEWSKI,E.LL.VANS,C.B.ALCOCK,"Metallurgical Thermochemistry",4th,pp.428.
[6] M.A.Nicolet.,"Diffusion Barriers in Thin Films",Thin Solid Films,52,pp415,1978.
[7] Jiang Tao,Nathan W. Cheung, and Chenming.,"Electromigration Characteristics of TiN Barrier Layer Material",IEEE Electron Device Letters,Vol 16,No.6,pp230,1995.
[8] K.Y.AHN.M.WITTMER AND C.Y.TING,"Investigation of TiN Films Reactively Sputtered using a Sputter Gun",Thin Solid Films,107,pp45,1983
[9] .D.S.Williams,F.A.Baiocchi,R.C.Beairsto,J.M.Brown,andR.V.Knoell.,"Nitrogen,oxygen,and argon incorporation during reactive sputter deposition of titanium nitride , "J. Vac. Sci. Technol. B5 (6), Nov / Dec ,pp1723,1987.
[10] Marc Wittmer,"Properties and microelectronic application of thin films of refractory metal nitride",J.Vac.Sci.Technol.A3,pp1797,1985.
[11] SWALIN ,"Thermodynamics of solids",2th,pp116.
[12] S.M.SZE,"Semiconductor Devices Physics and Technology",pp37.
[13] Ki-Chui Park and Ki-Bum Kim,"Effect of Annealing of Titanium Nitride on the Diffusion Barrier Property in Cu Metallization",J.Electrochem. Soc.,Vol. 142,No 9,pp3109,1995.
[14] 莊達人,"VLSI 製造技術".
[15] Akio Tanaka,Shouhei Matsumoto,Nanao Tsukamoto,Shigeyuki Itoh,Kazuhiro Chiba,Tsutomu Endoh,Akihiro Nakazato,Kuniyuki Okuyama,Minoru Hijikawa,Hideki Gotoh,Takanori Tanaka,and Nobukazu Teranishi."Influence of Bias Heating on Titanium Bolometer Infrared Sensor",SPIE Vol.3061,pp198,1997
[16] B.E.Cole,CJ.Han,R.E.Higashi,J.Ridley,and J.Holmen,"Monolithic 512*512 CMOS-Microbridge Arrays for Infrared scene Projection",TRNSDUCER'95,EUROSENSORS IX,pp395-C11
[17] A.Tanaka,S.Matsumoto,N.Tsukamoto,S.Itoh,T.Endoh,A.Nakazato,Y.Kumazawa,M.Hijikawa,H.Gotoh,T.Tanaka,and N.Teranishi."Silicon IC Process Compatible Bolometer Infrared Focal Plane Array", TRNSDUCER'95,EUROSENSORS IX,pp396-C11.
[18] OKUBASCHEWSKI,E.LL.VANS,C.B.ALCOCK,"Metallurgical Thermochemistry",4th,pp.427.
[19] Jiang Tao,Nathan W. Cheung, and Chenming.,"Electromigration Characteristics of TiN Barrier Layer Material",IEEE Electron Device Letters,Vol 16,No.6,pp230,1995.