本研究旨在利用IC製程並以(111)矽晶片之異方蝕刻技術，研製一溫度感測元件。元件是將鉬蒸鍍在(111)的N型矽晶片上，在經過快速熱退火處理或高溫爐管退火後，使矽晶片與鉬反應形成一矽化鉬之薄膜，且此薄膜與矽晶片本身形成蕭基特接觸，在逆向偏壓下其電流隨溫度的變化率很大，如此可作成蕭基能障熱敏阻體 ，實驗所得的電流溫度係數為9~5％，而熱敏阻常數B值約為4360K。此外，利用特殊之矽(111)異方蝕刻技術，可將元件製作於一封閉浮板，成為一隔熱基板，所以可做成一非常靈敏的紅外線感測器。

This study uses the standard IC process and silicon anisotropic etching technique to fabricate an infrared sensor.This device uses n type silicon combined with Mo-silicide as a Schottky barrier thermistor (SBT),which has very large temperature dependenceof reverse-bias current.It is found that it has large Temperature coefficient of current density (TCJ) values of about 9%~5%,and thermistor constant B values of about 4360K.Besides, to increase the device sensitivity, based on silicon (111) anisotropic etching technique of micromaching, we can fabricate a floating membrane with SBT on it.

第一章 緒論…………………………………………………1
第二章 原理…………………………………………………3
2-1熱分析……………………….………………………3
2-2蕭基能障之原理…………….………………………4
2-3蕭基能障之量測方法……….……………………….5
第三章 元件製程……………………………………………..8
3-1 元件製程…………………………………………….8
3-2 異方蝕刻技術………………………………………12
3-3 異方性蝕刻溶液……………………………………13
第四章 實驗結果與討論…………...…..…….…………….18
4-1元件C-V特性分析…………………..………………18
4-2元件I-V特性分析……………………..…………….18
4-3元件的B值和TCR值分析……………..…………..20
4-4元件懸浮結構的製作……………………..…………22
4-5矽化鉬薄膜的製作…………………………..………24
第五章 結論與未來展望……………………………..…….25
參考資料……………………………………………………..47

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