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研究生:黃唯夫
研究生(外文):Wei-Fu Huang
論文名稱:矽化鉬蕭基二極體紅外線感測元件之製程探討
論文名稱(外文):Study of Schottky diode made of Mo Silicide as an Infrared Sensor
指導教授:謝 正 雄黃 凱 風
指導教授(外文):Jin-Shown ShieKai-Feng Huang
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子物理系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:49
中文關鍵詞:異方蝕刻蕭基特接觸紅外線感測器
外文關鍵詞:anisotropic etchingSchottky barrierinfrared sensor
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本研究旨在利用IC製程並以(111)矽晶片之異方蝕刻技術,研製一溫度感測元件。元件是將鉬蒸鍍在(111)的N型矽晶片上,在經過快速熱退火處理或高溫爐管退火後,使矽晶片與鉬反應形成一矽化鉬之薄膜,且此薄膜與矽晶片本身形成蕭基特接觸,在逆向偏壓下其電流隨溫度的變化率很大,如此可作成蕭基能障熱敏阻體 ,實驗所得的電流溫度係數為9~5%,而熱敏阻常數B值約為4360K。此外,利用特殊之矽(111)異方蝕刻技術,可將元件製作於一封閉浮板,成為一隔熱基板,所以可做成一非常靈敏的紅外線感測器。
This study uses the standard IC process and silicon anisotropic etching technique to fabricate an infrared sensor.This device uses n type silicon combined with Mo-silicide as a Schottky barrier thermistor (SBT),which has very large temperature dependenceof reverse-bias current.It is found that it has large Temperature coefficient of current density (TCJ) values of about 9%~5%,and thermistor constant B values of about 4360K.Besides, to increase the device sensitivity, based on silicon (111) anisotropic etching technique of micromaching, we can fabricate a floating membrane with SBT on it.
第一章 緒論…………………………………………………1
第二章 原理…………………………………………………3
2-1熱分析……………………….………………………3
2-2蕭基能障之原理…………….………………………4
2-3蕭基能障之量測方法……….……………………….5
第三章 元件製程……………………………………………..8
3-1 元件製程…………………………………………….8
3-2 異方蝕刻技術………………………………………12
3-3 異方性蝕刻溶液……………………………………13
第四章 實驗結果與討論…………...…..…….…………….18
4-1元件C-V特性分析…………………..………………18
4-2元件I-V特性分析……………………..…………….18
4-3元件的B值和TCR值分析……………..…………..20
4-4元件懸浮結構的製作……………………..…………22
4-5矽化鉬薄膜的製作…………………………..………24
第五章 結論與未來展望……………………………..…….25
參考資料……………………………………………………..47
1] H. Baltes, "CMOS micro electro mechanical systems,"Sensors and Materials, vol. 9, no. 6, pp. 331-346, (1997)
[2] S.M.Sze, Physics of Semiconductor Devices,2nded, John Wiley and Sons Inc, (1981)
[3] S.M.Sze,Semiconductor Sensors, John Wiley and Sons Inc,(1994)
[4]周正山,"熱導式壓力微感測器",交大光電所博士論文(1997)
[5]翁炳國,"矽之微細加工技術及應用",交大光電所博士論文(1991)
[6] Samaun, K. D. Wise, and J. B. Angell, An IC Piezoresistive Pressure Sensor for Biomedical Intrumentation, IEEE Trans. Biomed. Engr. 20, 101, (1973)
[7] W. H. Ko, Solid State Physical Transducers for Biomedical research, IEEE Trans. Biomed. Engr. 32, (1985)
[8] O. Prohaska, New Developments in Miniaturized Electrochemical Sensors, Tech. Digest, 1985 Int. Conf. on Solid State Sensors and Actuators, 402, (1985)
[9] W. H. Ko, M. H. Bao and Y. D. Hong, A High-Sensitivity Integrated-Circuit Capacitive Pressure Transducer, IEEE Trans. Electron Devices 29, 48, (1982)
[10] K. D. Wise, Integrated Silicon Sensors; Interfacing Electronics to a Non- Electronic World, Sensors and Actuators 3, 229, (1982)
[11] S. Middelhoek and D. J. W. Noorlag, Signal Conversion in Solid-State Transducers, Sensors and Actuators 2, 211, (1982)
[12] E. M. Wormser, "Properties of Thermistor Infrared Dectectors" J. Opt. Soc. Am., 43, 15 (1953)
[13] I. M. Melman and I. M. Meltzer, "Status Report on Infrared Thermistor Detectors" Proc. Natl. Electronics Conf., p.556,October (1962)
[14] J. A. Becker, "Bolometric Thermistor" U.S. Patent No. 2,414,792, January 28, (1947)
[15] E. M. Wormser and R. D. DeWaard, "Construction for Thermistor Bolometers" U.S. Patent No. 2,963,674, December 6, (1960)
[16] P. Ciureanu, S. Middelhoek, "Thin film resistive sensor", Institute of Physics Publishing, New York, p236 ,(1992).
[17] E. Iborra, A. Sanz-Hervas and T. Rodriguez, "A new design of a semiconductor bolometer on rigid substrate for fusion plasma diagnostics", Rev. Sci. Instrum. 64, p1714-1717, (1993).
[18]賴建廷, 高溫度係數熱敏阻薄膜之製作與特性探討, 國立交通大學光電工程研究所, 碩士論文, 民國86年.
[19] M.Kimura, M.Yoshida, N.Suzuki,"Schottky Barrier Thermistor on the Micro-Air-Bridge",(1994)
[20] S.M.Sze,"Semiconducyor devices ;Physics and Technology" ,p.159-p.169 (1985)
[21] K. E. Bean and P. S. Gleim, The Influence of Crystal Orientation on Silicon Semiconductor Processing, IEEE Proc. 57, 1469, (1969)
[22] K. E. Peterson, Silicon as a mechanical material, IEEE Proc. 70, 420, (1982).
[23] H. Seidel, L. Gsepregi, A. Heuberger and H. Baumgartel, Anisotropic etching of crystalline silicon in alkaline solution, J. Electrochem. Soc. 137, 3612, (1990)
[24] D. B. Lee, Anisotropic etching of silicon, J. Applied Physics 40, 4569, (1959)
[25] M.J. Declercq, L. Gerzberg and J. D. Meindl, Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology , Solid-State Science and Techonology 122, 545, (1975).
[26] M. A. Gajda, H. Akmed, J.E.A. Shaw and A. Putnis, Anisotropic etching of silicon in hydrazine, Sensors and Actuators A40, 227, (1994).
[27] R. M. Finne and D.L.Klein, A water-amine-complexing agent system for etching silicon, J. Electronchem. Soc.: Solid-State Science 114, 965, (1967).
[28] K. E. Bean, Anisotropic Etching of Silicon, IEEE Trans. Electron Devices 25, 1185, (1978).
[29] A. Reiman, M. Berkenblit, .S. A. Chan, F.B. Kaufman and D. C. Green, The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions, J. Electronchem. Soc. 137, 1406, (1979).
[30] O. Tabata, R. Asahi, H. Funabashi and S. Sugiyama, Anisotropic etching of silicon in (CH3)4NOH solutions, Transducers''91, Sanfrancisco USA, 811, (1991).
[31] U. Schnakenberg, W. Benecke and P. Lange, TMAHW etchants for silicon micromachining, Transducers''91, Sanfrancisco USA, 815, (1991).
[32] O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka and S. Sugiyama, Anisotropic etching of silicon in TMAH solutions, Sensors and Actuators A 34, 51, (1992).
[33] H. Sando and G. Kittilsland, Boron etch-stop in TMAH solutions, Transducers''95, Stockholm, Sweden, 1, 190, (1995).
[34] B. D. Cullity, Elements of X-ray diffraction, Addison-wesley , (1978).
[35] M. Matsuoka, Y. Yoshida, and M. Moronuki, Preparation of silicon thin diaphragms free from micropyramids using anisotropic etching in KOH solutions, J. Chemical Engr. Japan 25, 735, (1992).
[36] Samaun, K. D. Wise, and J. B. Angell, An IC Piezoresistive Pressure Sensor for Biomedical Intrumentation, IEEE Trans. Biomed. Engr. 20, 101, (1973)
[37] J.M Andrews and F.B. Koch ,"Formation of NiSi and Current Transport across the NiSi-Si Interface",Solid State Electron , 14,901,(1971)
[38] S. M. Sze, Semiconductor devices physics and technology, John Wiley & Suns, Singapore, p36 (1985).
[39] 21.F. J. Hyde, Thermistors, London, p13 ,(1971)
[40] Parker, Gordon A," Analytical chemistry of molybdenum",(1983)
[41] R.J.Schutz and L.R. Testardi "Thin-film Mo-Si interaction",Appl.Phys.Letter 34(11)1,June,(1979)
[42] T.P Chow,A.j.Steckl,and D.M. Brown,"The effect of annealing on the properties of silicidized molybdenum thin film",J.Apply Physics.52(10),October (1981)
[43] Ashok K. Kapoor,Michael E. Thomas,and Madhukar B.Vora,"A Low-Barrier Schottky Process Using MoSi2",IEEE Transactions on electron devices,vol ED-33,NO..June (1986)
[44]A.Guivarc''h,P.Auvray,L.Berthou,M.LeCue,J.P.Boulet,P.Henoc,and G.Pelous,"Reaction kinetics of molybdenum thin films on silicon (111) surface",J.Apply.Physics.49(1),January (1978)
[45]S.P.Murarka, .H.Read, .J.Doherty, and D.B.Fraser,"Resistivities of Thin Film Transition Metal Silicides" , J.Electrochem.Soc.: Electrochemical science and Technology,February (1982)
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