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研究生:詹原欣
研究生(外文):Yuan-Hsin Chan
論文名稱:氧化阻擋層在濕氧化砷化鋁技術上的應用
論文名稱(外文):The study of oxidation stop layer applied on AlAs wet oxidation
指導教授:李威儀李威儀引用關係
指導教授(外文):Wei-I Lee
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子物理系
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:英文
論文頁數:70
中文關鍵詞:氧化阻擋層濕氧化砷化鋁
外文關鍵詞:Oxidation stop layerWet oxidation of AlAs
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近幾年來,濕氧化砷化鋁技術逐漸受到重視,尤其是在垂直面射型雷射的應用上,擔負起光及電流侷限的工作。但是,許多的研究指出氧化後的砷化鋁/砷化鎵接面表面複合速率相當高,需要一氧化阻擋層作為緩衝層以降低表面複合速率。在本研究中,我們嘗試兩種不同的氧化阻擋層,分別是低鋁含量的砷化鋁鎵以及磷化銦鎵。發現即使是含鋁量低的砷化鋁鎵在氧化溫度大於400℃的情況下,仍會以緩慢的速度開始氧化。而磷化銦鎵無論是在長時間(3小時)或是較高的溫度(500℃)下似乎都沒有氧化的跡象。顯現出其為良好的氧化阻擋層之特性,再加上晶格常數與砷化鎵匹配,因此可以廣泛的應用在以砷化鎵為主的元件上。近幾年來,濕氧化砷化鋁技術逐漸受到重視,尤其是在垂直面射型雷射的應用上,擔負起光及電流侷限的工作。但是,許多的研究指出氧化後的砷化鋁/砷化鎵接面表面複合速率相當高,需要一氧化阻擋層作為緩衝層以降低表面複合速率。在本研究中,我們嘗試兩種不同的氧化阻擋層,分別是低鋁含量的砷化鋁鎵以及磷化銦鎵。發現即使是含鋁量低的砷化鋁鎵在氧化溫度大於400℃的情況下,仍會以緩慢的速度開始氧化。而磷化銦鎵無論是在長時間(3小時)或是較高的溫度(500℃)下似乎都沒有氧化的跡象。顯現出其為良好的氧化阻擋層之特性,再加上晶格常數與砷化鎵匹配,因此可以廣泛的應用在以砷化鎵為主的元件上。

The technology of AlAs wet oxidation has attracted much attention in recent years, especially for the optical and electrical confinement in VCSEL. But, many researches had indicated that the surface recombination velocity at the interface of AlAs-oxide/GaAs is very high. For reducing the surface recombination velocity, an oxidation stop layer inserted between AlAs and GaAs is necessary. In this study, two different kinds of oxidation stop layer, Al0.4Ga0.6As and Ga0.5In0.5P, are applied. It was found that even for the low Al ratio of Al0.4Ga0.6As, oxidation process proceeded through this layer with a slow oxidation rate at temperature higher than 400℃. However, Ga0.5In0.5P seemed unaffected for the treatments of long oxidation time ( 180 mins ) or high oxidation temperature ( 500℃ ). Therefore, based on the characteristics of well-performed oxidation stop layer and lattice-matched to the GaAs. Oxidation stop layer such as Ga0.5In0.5P can be applied extensively on GaAs devices.

CHINESE ABSTRACT
ENGLISH ABSTRACT
ACKNOWLEDGEMENT
CONTENTS
LIST OF TABLES
FIGURE CAPTIONS
Chapter 1 Introduction
Chapter 2 Concepts of Oxidation Stop Layer and Physics of
Solar Cell
2-1 Review of AlAs Wet oxidation
2-2 Oxidation Stop Layer for AlAs Wet Oxidation
2-3 Concepts of a P-N Junction Solar Cell
2-4 Output Parameters of a Solar Cell
2-5 Design of Window Layer of GaAs Solar Cell
2-6 Concepts of Spectral Response
Chapter 3 Study on AlAs Wet Oxidation with Different
Oxidation Stop Layer
3-1 Sample Preparation
3-2 Investigation of a sable oxidation stop layer
3-2-1 Sample structure and oxidation conditions
3-2-2 Photoluminescence Measurement
3-2-3 Reflectance Measurement
3-2-4 Brief summary
3-3 Practical application of oxidation stop layer on
solar cell
3-3-1 Sample structure and oxidation conditions
3-3-2 I-V Measurment
3-3-3 Spectral Response Measurement
3-3-4 Brief summary
Chapter 4 Conclusion
References
Tables
Figures

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