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研究生:賴振民
研究生(外文):Jenn-Min Lai
論文名稱:微型加速儀與力感測器之設計與製造之初步探討
論文名稱(外文):The Design and Fabrication of Micro-scale Accelerometer and Force Sensor - Preliminary Study
指導教授:成 維 華
指導教授(外文):Wei-Hua Chieng
學位類別:博士
校院名稱:國立交通大學
系所名稱:機械工程系
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:116
中文關鍵詞:可變電容加速儀微型力感測器
外文關鍵詞:the micro capacitance accelerometerthe micro force sensor
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  • 被引用被引用:6
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本論文的主旨在於探討微型可變電容加速儀、微型力感測器以及它們所涵蓋的製程。
首先,用電容分析的理論模擬平行板電容的電容值。以包含有彈性樞軸的四連桿機構為基礎,設計出微型可變電容式加速儀,並且模擬在不同加速狀況下,加速儀的反應。
其次,依據力感測器的工作原理及壓阻效應,設計微型力感測器,並分析力感測器在不同受力狀況下的反應。據此,建構出轉換矩陣,並求得狀態數字(condition number) 。
於製程中,本論文提出新的在[100]晶片上找尋<110>方向的圖樣,這個圖樣對接下來使用的光罩提供非常重要的參考。新的摻雜方法提高P型矽層的硼摻雜濃度,以及未摻雜的矽單晶層可以在此高濃度矽層上成長出來。此外,並介紹力感測器的製程、製作出原型力感測器以及討論製作結果。
This thesis explored the micro capacitance accelerometer and the micro force sensor as well as the fabrication processes of these micro sensors.
The principle of capacitance analysis was presented and the capacitance of the parallel-plate capacitor was calculated. Based on four bar linkage with elastic pivots structure, we have designed the capacitance type accelerometers. The responses of the structure corresponding to three different accelerating conditions were simulated.
The work principle of the force sensor and the piezoresistive characteristic were introduced. We analyzed the responses of the force sensor corresponding to several different loading conditions. We constructed the compliance matrix and obtained the condition number.
A new pattern to determine the <110> crystal orientation on [100] silicon wafer provided a valuable reference for all subsequent mask patterns. A new doping method could increase the B doping concentration of the P+ layer. Besides, an undoped epitaxial Si film was grown on the high doped silicon layer. Furthermore, the manufacturing processes for the force sensor was introduced. A prototype of the force sensor was fabricated and discussed.
封面
摘要
誌謝
目錄
圖目錄
表目錄
第一章 緒論
1.1 簡介及文獻回獻
1.2 論文架構
第二章 電容式加速儀
2.1 電容
2.2 加速儀機構的構造
2.3 機構運動的模擬
第三章 微型力感測器
3.1 壓阻效應
3.2 工作原理
3.3 力感測器的分析
第四章 製程
4.1 晶片方向對準
4.2 蝕刻停止
4.3 p+層深度量測
4.4 微型力感測器的製程
第五章 結論
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