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研究生(外文):Jenn-Min Lai
論文名稱(外文):The Design and Fabrication of Micro-scale Accelerometer and Force Sensor - Preliminary Study
指導教授:成 維 華
指導教授(外文):Wei-Hua Chieng
外文關鍵詞:the micro capacitance accelerometerthe micro force sensor
  • 被引用被引用:6
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其次,依據力感測器的工作原理及壓阻效應,設計微型力感測器,並分析力感測器在不同受力狀況下的反應。據此,建構出轉換矩陣,並求得狀態數字(condition number) 。
This thesis explored the micro capacitance accelerometer and the micro force sensor as well as the fabrication processes of these micro sensors.
The principle of capacitance analysis was presented and the capacitance of the parallel-plate capacitor was calculated. Based on four bar linkage with elastic pivots structure, we have designed the capacitance type accelerometers. The responses of the structure corresponding to three different accelerating conditions were simulated.
The work principle of the force sensor and the piezoresistive characteristic were introduced. We analyzed the responses of the force sensor corresponding to several different loading conditions. We constructed the compliance matrix and obtained the condition number.
A new pattern to determine the <110> crystal orientation on [100] silicon wafer provided a valuable reference for all subsequent mask patterns. A new doping method could increase the B doping concentration of the P+ layer. Besides, an undoped epitaxial Si film was grown on the high doped silicon layer. Furthermore, the manufacturing processes for the force sensor was introduced. A prototype of the force sensor was fabricated and discussed.
第一章 緒論
1.1 簡介及文獻回獻
1.2 論文架構
第二章 電容式加速儀
2.1 電容
2.2 加速儀機構的構造
2.3 機構運動的模擬
第三章 微型力感測器
3.1 壓阻效應
3.2 工作原理
3.3 力感測器的分析
第四章 製程
4.1 晶片方向對準
4.2 蝕刻停止
4.3 p+層深度量測
4.4 微型力感測器的製程
第五章 結論
1.Tang, W.C., Nguyen, T.H., and Howe, R.T., "Laterally Driven Polysilicon Resonant Microstructure", Sensors and Actuators, 20, 1989, pp.25-32.
2.Rudolf, F., Jornod, A., Bergqvist, J., and Leuthold, H., "Precision Accelerometer with mg Resolution", Sensors and Actuators, A21-A23, 1990, pp.297-302.
3.Seidel, H., Riedel, H., Kolbeck, R., Muck, G., Kupke, W., and Koniger, M., "Capacitive Silicon Accelerometer with Highly Symmetrical Design", Sensors and Actuators, A21-A23, 1990, pp.312-315.
4.Okada, K., "Tri-Axial Piezoelectric Accelerometer", Transducer ''95, June 25-29, 1995, pp.566-569.
5.Spangler, L., and Kemp, C.J., "ISSAC-Integrated Silicon Automotive Accelerometer", Transducer ''95, June 25-29, 1995, pp.585-588.
6.Huang, R.S., Abbaspour-Sani, E., and Kwok, C.Y., "A Novel Accelerometer Using Silicon Micromachined Cantilever Supported Optical Grid and Pin Photodetector", Transducer ''95, June 25-29, 1995, pp.663-666.
7.Roylance, L.M., and Angell, J.B., "A Batch-Fabricated Silicon Accelerometer", IEEE Transactions on Electron Devices, Vol. ED-26, No. 12, 1979, pp.1911-1917.
8.Seidel, H., Fritsch, U., Gottinger, R., Schalk, J., Walter, J., and Ambaum, K., "A Piezoresistive Silicon Accelerometer With Monolithically Integrated CMOS-Circuitry", Transducer ''95, June 25-29, 1995, pp.597-600.
9.Tokao, H., Matsumoto, Y., Seo, H.D., Tanaka, H., Ishida, M., and Nakamura, T., "Thre Dimensional Vector Accelerometer Using SOI Structure for High Temperature", Transducer ''95, June 25-29, 1995, pp.683-686.
10.Puers, B., Reynaret, L., Soneyw, W, and Sansen, W.M.C., "A New Unaxial Accelerometer in Silicon Based on The Piezojunction Effect", IEEE Trans. of Electronic Devics, Vol. 35, No. 8, 1988, pp.764-770.
11.Hiratsuka, R., Duyn, D.C.V., Otaredian, T., Vries, P. De, "Design Consideration for the Thermal Accelerometer", Sensores and Actuators A, Vol. 32, 1992, pp.380-385.
12.Abbaspour-Sani, E., Huang, R.S., and Kwok, C.Y., "A Linear Electromagnetic Accelerometer", Sensores and Actuators, A44, 1994, pp.103-109.
13.Chen, P.L., Muller, R.S., Jolly, R.D., Halac, G.L., White, R.M, Andrews, A.P., Lim, T.C., and Motamedi, M.E., "Integrated Silicon Microbeam PI-FET Accelerometer", IEEE Trans. of Electronic Devices, Vol. ED-29, No. 1, 1982, pp.27-33.
14.Chen, P.L., Muller, R.S., and Andrews, A.P., "Integrated Silicon PI-FET Accelerometer With Proof Mass", Sensores and Actuators A, Vol. 5, 1984, pp.119-126.
15.Devoe, D.L., and Pisano, A.P., "A Fully Surface-Micromachined Piezoelectric Accelerometer", Transducer ''97, June 16-19, 1997, pp.1205-1208.
16.Rockstad, H.K., Kenny, T.W., Reynolds, J.K., Kaiser, W.J., and Gabrielson, T.B., "A Miniature High-Sensitivity Broad-band Accelerometer Based on Electron Tunneling Transducers", Sensores and Actuators A, Vol. 43, 1994, pp.107-114.
17.Rockstad, H.K., Reynolds, J.K., Tnag, T.K., Kenny, T.W., Kaiser, W.J., and Gabrielson, T.B., "A Miniature, High-Sensitivity, Electron Tunneling Accelerometer", Transducer ''95, June 25-29, 1995, pp.675-678.
18.Kubena, R.L., Atkinson, G.M., Robinson, W.P., and Stratton, F.P., "A New Miniaturized Surface Micromachined Tunneling Accelerometer", IEEE Electronic Device Letters, Vol. 17, No. 6, 1996, pp.306-308.
19.Liu, C.H., Grade, J.D., Barzilai, A.M., Reynolds, J.K., Partridge, A., Rockstad, H.K., and Kenny, T.W., "Characterization of A High-Sensitivity Micromachined Tunneling Accelerometer", Transducer ''97, June 16-19, 1997, pp.471-472.
20.Hartwell, P.G., Bertsch, F.M., Miller, S.A., Turner, K.L., and MacDonald, N.C., "Single Mask Lateral Tunneling Accelerometer", Micro Electro Mechanical Systems, MEMS 98, 1998, pp.340-344.
21.M. Uchiyama, E. Bayo, E. Palma-Villalon, "A Systematic Design Procedure to Minimize a Performance Index for Robot Force Sensors", Transactions of the ASME, Journal of Dynamic Systems, Measurement, and Control, Vol. 113, No. 3, pp. 388-394, 1991.
22. E. Bayo, J. R. Stubbe, "Six-Axis Force Sensor Evaluation and a New Type of Optimal Frame Truss Design for Robotic Applications", Journal of Robotic Systems, Vol. 6, No. 2, pp. 191-208, 1989.
23.Cheshmehdoost, A., and Jones, B.E., "Design and Performance Characteristics of an Integrated High Capacity DETF-Based Force Sensor", Transducer ''95, June 25-29, 1995, pp.608-611.
24.W. L. Jin and C.D. Mote, Jr., "Development and calibration of a sub-millimeter three component force sensor", Sensors and Actuators, A65, pp.89-94, 1998.
25.French, P.J., and Evans, A.G.R., "Polycrystalline Silicon as a Strain Gauge Material", Journal of Physics E: Scientific Instruments, Vol. 19, pp1055-1058, 1986.
26.Sugiyama, S, Kawahata, K., Yoneda, M., and Igarashi, I., "Tactile Image Detection Using a 1k-element Silicon Pressure Sensor Array", Sensores and Actuators, A21-A23, 1990, pp.397-400.
27.Kane, B.J., and Kovacs, G.T.A., "A CMOS Compatible Traction Stress Sensing Element for Use in High Resolution Tactile Imaging", Transducer ''95, June 25-29, 1995, pp.648-651.
28.Kane, B.J., Cutkosky, M.R., and Kovacs, G.T.A., "CMOS-Compatible Traction Stress Sensor for Use in High-Resolution Tactile Imaging", Sensores and Actuators A, Vol. 54, 1996, pp.511-516.
29.Suzuki, K., Najafi, K., and Wise, K.D., "A 1024-Element High-Performance Silicon Tactile Imager", IEEE Trans. of Electronic Devices, Vol. 37, No. 8, 1990, pp.1852-1860.
30.Suzuki, K., Najafi, K., and Wise, K.D., "Process Alternative and Scaling Limits for High-Density Silicon Tactile Imagers", Sensores and Actuators, A21-A23, 1990, pp.915-918.
31.De Souza, R.J., and Wise, K.D., "A Very High Density Bulk Micromachined Capacitive Tactile Imager", Transducer ''97, June 16-19, 1997, pp.1473-1476.
32.Wolffenbuttel, M.R., and Regtien, P.P.L., "Design Consideration for a Silicon Capacitive Tactile Cell", Sensores and Actuators A, Vol. 24, 1990, pp.187-190.
33.Chu, Z., Sarro, P.M. and Middelhoek, S., "Silicon Three-Axial Tactile Sensor", Transducer ''95, June 25-29, 1995, pp.656-659.
34. David K. Cheng, Field and Wave Electromagnetics, Addison-Wesley, 1989.
35. Richard C. Booton, JR, Computational Methods for Electromagnetics and Microwaves, John Wiley & Sons, 1992.
36. Yang, Y.N., Cheng, W.H., Lee, A.C., "Design for Manufacturing the Elastic Pivots with Special Reference to Manufacturing Error", Int. J. Mach. Tools Manufact., Vol. 34, No. 8, 1994, pp.1103-1118.
37.Kobayashi, D., Hirano, T., Furuhate, T., Fujita, H., "An Integrated Lateral Tunneling Unit", IEEE Proc. Micro Electro Mechanical System, Germany, Feb. 4-7, 1992, pp. 214-219.
38.Matoba, H., Ishikawa, T., Kim, C.J., Muller, R.S., "A Bistable Snapping Microactuator", IEEE Proc. Micro Electro Mechanical System, Japan, Jan. 25-28, 1994, pp. 45-50.
39.Obermeier, E., Lin, J., Schlichting, V., "Electrostatically Activated Micro-Shutter in (110) Silicon", ASME, Micromechanical Systems, Dsc-Vol. 40, 1992, pp. 13-22.
40.Ried, R.P., Kim, E.S., Hong, D.M., Muller, R.S., "Residual-Stress Compensation in Clamped-Clamped Micromachined Plates", ASME, Micromechanical Systems, Dsc-Vol. 40, 1992, pp. 13-22.
41.Kurt E. Petersen, "Silicon as a Mechanical material", Proceedings of the IEEE, Vol. 70, No. 5, pp.420-457, May 1982.
42.Leuthold, H., and Rudolf, F., "An ASIC for High-Resolution Capacitive Microaccelerometers", Sensors and Actuators, A21-A23, 1990, pp.278-281.
43.Sze, S.M., Semiconductor Sensors, John Wiley & Sons, 1994.
44.F. T. Geyling and J. J. Forst, "Semiconductor Strain transducers", The Bell System Technical Journal, pp.705-730, May 1960.
45.Charles S. Smith, "Piezoresistance Effect in Germanium and Silicon", Physical Review, Vol 94, No. 1, pp. 42-49, 1954.
46.W. G. Pfann and R. N. Thursion, "Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects", J. Appl. Phys, Vol 32, pp.2009-2019, Oct. 1961.
47.Yozo Kanda, "A Graphical Representation of the Piezoresistance Coefficient in Silicon", IEEE Transactions on Electron Devices, Vol. ED-29, No. 1, pp. 64-70, 1982.
48.Gardner, J.W., Microsensors Principles and Application, John Wiley & Sons, 1994.
49.H. , O. Dorsch and E. Obermeier," An improve method to align etchmasks to the <110> crystal orientation", Micro System Technologies 96, Vde-Verlag Gmbh, Berlin, pp. 651-655, 1996.
50.G. Ensell," Alignment of mask patterns to crystal orientation", Transducers 95, The 8th International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Technical Digest of Papers, pp.186-189, 1995.
51.G. Ensell," Alignment of mask patterns to crystal orientation", Sensors and Actuators, A 53, pp.345-348, 1996.
52.A. Steckenborn, etc., "High precision wafer orientation for micromachining", Micro System Technologies 91, Vde-Verlag Gmbh, Berlin, pp. 467-471, 1991.
53.M. Vangbo and Y. , "Precise mask alignment to the crystallographic direction of silicon wafers using wet anisotropic etching", Journal of micromechanics and microengineering, 6, pp. 279-284, 1996.
54. J. M. Lai, W. H. Chieng, and Y.-C. Huang, "Precision Alignment of Mask Etching with Respect to Crystal Orientation", the Journal of Micromechanics and Microengineering (accepted).
55.Gennissen, P.T.J., Bartek, M., French, P.J., Sarro, P.M., and Wolffenbuttel, R.F., "Automatic Etch Stop On Buried Oxide Using Epitaxial Lateral Overgrowth", Transducer ''95, June 25-29, 1995, pp.75-78.
56.Ding, X., KO, W.H., and Mansour, J.M., "Residual Stress and Mechanical Properties of Boron-doped p+-Silicon Films", Sensors and Actuators, A21-A23, 1990, pp.866-871.
57.Bartek, M., Gennissen, P.T.J., French, P.J., Sarro, P.M., and Wolffenbuttel, R.F., "Study of Selective and Non-Selective Deposition of Single- and Polycrystalline Silicon Layers in an Epitaxial Reactor", Transducer ''97, June 16-19, 1997, pp.1403-1406.
58. N. Goldsmith et al, RCA Review 28, pp. 344, 1967.
59. M. Miyake, J. Electrom. Soc. 138, pp. 3031, 1992.
60. M. Rastogi, W. Zagozdzon-Wosik, F. Romero-Borja, J. M. Heddleson, R. Beavers, P. Grabiec, and L. T. Wood, Mater. Res. Soc. Symp. Proc. 342, pp. 369, 1994.
61. A. Chin, J. M. Lai, Y.-C. Huang, K. Lee, W. H. Chieng, Y.-S. Lin, and W. Hsu ,"Novel Processing Technique for Thin Diaphragms", Micro System Technologies, pp. 223-228, 1996.
62.H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, "Anisotropic Etching of Crystalline Silicon in Alkaline Solutions II", Journal of the Electrochemical, Soc. 137, No. 11, pp. 3626-3632, 1990.
63.N. Sato and T. Yonehara, "Hydrogen annealed silicon-on-insulator", Applied Physics Letters, 65, p.1924-1926, 1994.
64.W. E. Beadle, J. C. C. Tsai, R. D. Plummer, Quick Reference Manual for Silicon Integrated Circuit Technology, John Wiley & Sons, 1985.
65.W. R. Runyan and K. E. Bean, Semiconductor Integrated Circuit Processing Technology, pp. 371-475, 1990.
66.S. Wolf and R. N. Tauber, SILICON PROCESSING FOR THE VLSI ERA, VOLUMN I: Process Technology, Lattice Press, 1986.
67.S. Johansson et al., "Influence of Bonded Area Ratio on the Strength of FAB Seals between Silicon Microstructures and Glass", Sensors and Materials, 4, pp.209-221, 1988.
68.J. M. Lai, F. Y. Hsieh, W. H. Chieng and A. Chin, "A micro sensor with six degree of freedom", to appear. (IMLab at NCTU).
69.J. M. Lai, F. Y. Hsieh, W. H. Chieng and A. Chin, "Novel fabricating processes for a micro force sensor", to appear. (IMLab at NCTU).
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