(3.238.7.202) 您好!臺灣時間:2021/03/04 01:40
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:李兆逵
研究生(外文):Chao-Kuei.Lee
論文名稱:漸寬型半導體雷射放大器中次皮秒
論文名稱(外文):Characterization of injection-amplified
指導教授:潘犀靈
指導教授(外文):C-Ling Pan
學位類別:碩士
校院名稱:國立交通大學
系所名稱:光電工程所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:92
中文關鍵詞:漸寬型半導體雷射放大器飛秒脈衝鈦藍寶石雷射干涉式自相干儀啾頻
外文關鍵詞:tapered semiconductor laser diode amplifierFemtosecond pulseTi-Sapphire laserinterferometric autocorrelatorchirp
相關次數:
  • 被引用被引用:2
  • 點閱點閱:94
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
在本碩士論文的工作中,我們架設了一套可即時監控超短脈衝的干涉式自相干儀。具有線性啾頻的高斯波形飛秒脈衝,其干涉式自相干軌跡可利用富利葉分析以解析解的形式加以描述。此自製的干涉式自相干儀是藉由轉換極限飛秒脈衝輸出的鈦藍寶石雷射進行校正。
利用此具干涉式自相干儀,我們研究了次皮秒脈衝在漸寬型半導體雷射光放大器中的注入放大行為。入射光脈衝寬度為90飛秒且為轉換極限,脈衝致寬和啾頻等行為在光放大後被觀察,我們發現當工作電流從596mA(I=0.98Ith)增加到662mA(I=1.1Ith)時,脈衝寬由480飛秒增加到530飛秒;啾頻的數量級為1024sec-2。我們也首度報導了次皮秒光脈衝在漸寬型半導體雷射光放大器中的群速度色散參數:約為250fs/nm,這和文獻中所報導單條型半導體雷射光放大器的這兩個參數,在數量級上是相同的。
In the work, we have constructed an interferometric autorrelator to monitor ultrafast optical pulses in real time. Using Fourier analysis, the interferometric autocorrelation trace of Gaussian-shaped femtosecond pulses with linear chirp were described analytically. The home-made interferometric autocorrelator was calibrated with a transform-limited femtosecond Ti-Sapphire laser.
Using the interferometric autocorrelator, we have characterized subpicosecond pulses injection-amplified in a tapered semiconductor optical amplifiers (SOA''s). The optical pulse before amplification is transform-limited. The pulse was Gaussian in shape and the width was about 90 fsec. The broader amplified subpicosecond pulses with chirping have been observed. We find the pulsewidth broadened from 480 fsec to 530 fsec as the bias cureent increased from 596mA (I=0.98Ith) to 662mA (I=1.1Ith). The order of magnitude of the chirp parameter was about 1024sec-2. We also reported for the first time that the chirp and GVD parameter (~250fs/nm) of the tapered SOA is of the same order magnitude as that of single stripe devices.
中文摘要………………………………………………………………..Ⅰ
英文摘要………………………………………………………………..Ⅱ
誌謝……………………………………………………………………..Ⅲ
目錄……………………………………………………………………..Ⅳ
圖目錄…………………………………………………………………..Ⅴ
第一章 導言與動機………………………………………………….….1
1.0 引言.…………………………………………………………….1
1.1 注入放大器簡介…..…………………………………………….1
1.2 半導體雷射放大器的研究歷史與背景………………………..3
1.3 漸寬型半導體雷射放大器之設計概念………………………..3
1.4 對過去半導體雷射放大器相關研究之回顧…………………..4
1.5 本實驗室過去對漸寬型半導體雷射放大器之工作回顧……..5
1.6 觀察放大過程中相位行為之動機……………………………..7
第二章實 驗 方 法 和 分 析………………………………...……...10
2.1自相干儀之簡介………………………………………………10
a.脈衝寬度的量測……………………………..……..………...10
b.強度式自相干儀……………………………………………...10
c.干涉式自相干儀……………………………………………...11
2.2實驗量測系統架設…………….………………………………12
2.3分析方法……………………….………………………………13
a.所使用分析方法的介紹…...…………………………………13
b.利用此方法對輸出光源所做之測試…………………...……19
c.群速度色散 (GVD) 的計算………………………………....20
d.干涉式互相干儀……………………...……………………....22
第三章實 驗 系 統 架 設 與 量 測………………………………..24
3.1 實驗系統架設…………………………………………………24
3.2 注入放大後光訊號的觀察……………………………………26
3.3 數據分析與討論………………………………………………28
3.4 結語……………………………………………………………29
第四章 結 論 與 未 來 的 展望……...…………………………….31
4.1 結論……………………………………………………………31
4.2 未來工作的展望………………………………………………32
參考文獻………………………………………………………………...33
參考圖……………………………………………………………….37~91
表格……………………………………………………………………...92
【1】 杜可明博士, "高功率半導體雷射系統及其在加工方面的應用",光訊(Opto News & Letters), vol.69, pp.1-2,1997
【2】A. E. Siegman , Lasers (University Science Book ,Mill Valley , Calif., 1986)
【3】M. R. Sureete, D. R. Hjelme, R. Ellingsen, A. R. Mickelson, "Effects of noise on transients of injection locked semiconductor lasers",
IEEE J. Q. E., vol.29,no.4,pp.1046-1063,1993.
【4】B. Van der Pol, "Forced oscillations in a circuit with nonlinear resistance",
Phil. Mag., vol.3,pp.65-80,1927.
【5】R. Adler , "A study of locking phenomena in oscillators",
Proc. IPE., vol.34,pp.351-357,1927.
【6】H. Stover, W. Steiner, "Locking of laser oscillators by light injection",
Appl. Phys. Lett., vol.8,pp.91-93,1966.
【7】S. Kobayashi, T. Kimura, "Injection locking characteristics of an AlGaAs semiconductor laser" IEEE J.Q.E., vol.16,no.9,pp.915-917,1980.
【8】S. Kobayashi, J. Yamada, S. Machida, T. Kimura, "Single-mode operation of 500Mbit/s modulated AlGaAs semiconductor laser by injection locking", Electron Lett., vol.16,no.19,pp.746-748,1980
【9】K. Otsuka, S. Tarucha, "Theoretical studies on injection induced modulation of laser diodes",
IEEE. J. Q. E., vol.17, no.8, pp.1515-1521, 1981.
【10】R. Lang,"Injection locking properties of a semiconductor laser",
IEEE. J. Q. E., vol.18, no.6, pp.976-983, 1982.
【11】B. Frey, J. G. Provost, "Propagation equation based theory of intermodal injection locking in semiconductor lasers", IEEE. J. Q. E., vol.26, no.10, pp.1705-1712, 1990.
【12】L. Li, "Static and dynamic properties of injection-locked semiconductor laser", IEEE. J. Q. E., vol.30, no.8, pp.1701-1708, 1994.
【13】S. Kobayashi, T. Kimura, "Injection locking in AlGaAs semiconductor laser" IEEE J.Q.E., vol.17,no.5,pp.681-689,1981.
【14】F. Mogensen, H. Olesen, G. Jacobsen, "Locking conditions and stability properties for a semiconductor laser with external light injection", IEEE J.Q.E., vol.21,no.7,pp.784-793,1985.
【15】I. Petitbon, P. Gallion, G.Debarge, C. Chabran, "Locking bandwidth and relaxation oscillation of an injection-locked semiconductor laser", IEEE J.Q.E., vol.24,no.2,1988.
【16】O. Lidoyne, P. Gallion, C. Chabran, G. Cebarge, "Locking range, phase noise and power spectrum of an injection-locked semiconductor laser",IEE Proc., vol.137, Pt.J, no.3, 1990.
【17】S. Kobayashi, T. Kimura, "Optical FM signal amplification bu injection locked and resonant type semiconductor laser amplifier" IEEE Trans. M. T. T. , vol.30,no.4,pp.421-427,1982.
【18】C. Lin, F. Mengel, "Reduction of Frequency chirping and dynamic linewidth in high-speed directly modulated semiconductor lasers by injection locking", Electron Lett., vol.20,no.25/26,pp.1073-1075,1984
【19】P. Gallion, H. Nakajima, G. Cebarge, C. Chabran, "Contribution of spontaneous emission to the linewidth of an injection-locked semiconductor laser", Electron. Lett., vol.21, no.14,pp.626-628, 1985.
【20】M. P. van Exter, C. Biever, J. P. Woerdman, "Effect of optical injection on bias voltage and spectrum of a semiconductor laser", IEEE J.Q.E., vol.29,no.11, pp.2771-2779,1993.
【21】Y. Yamamoto, T. Kimura, "Coherent optical fiber transmission systems",
IEEE I. Q. E. vol. 17,pp.919-935,1981.
【22】D. V. Plant, D. C. Scott, H. R. Fetterman, "Generation of millimeter-wave radiation by optical mixing in FET''s integrated with printed circuit antennas", IEEE Microwave and Guided Wave Lett., vol.1, pp.132-134, 1991.
【23】Chi-Lung Wang, Ci-Ling Pan, "Tunable multi-THz beat signal bereration from a two-wavelength laser diode array", Opt. Lett., 20,July, 1995.
【24】M. Margalit, M. Orenatein, G. Eisenstein, V. Mikhaelshvili,"Injection locking of an actively mode-locked semiconductor laser", Opt. Lett., vol.29, no.24 ,pp.2125-2127 1994.
【25】R. Hui, A. Mecozzi, A. D''ottavi, P. Spano, "Novel measurement technique of α factor in DFB semiconductor lasers by injection locking", Electron. Lett., vol.26,n0.14,pp.997-998, 1990.
【26】M. P. van Exter, J. P. Woerdman, "Determination of α factor of Fabry-Perot-Type semiconductor laser by injection locking"", Electron. Lett., vol.28,n0.17,pp.1607-1608, 1992.
【27】K. Nakagaw, M. Teshima, M. Ohtsu, "Injection locking of a highly coherent and high-power diode laser at 1.5μm", Opt. Lett. Vol.16,no.20, pp. 1590-1592, 1991.
【28】H. Tsuchida, "Tunable, narrow-linewidth output from an injection-locked high-power AlGaAs laser diode laser array", Opt. Lett. Vol.19,No.21,pp.1743,1994.
【29】H. Glafouri-Shiraz, P. W. Tan, W. M. Wang, "A novel analytical expression of saturation intensity of InGaAsP taperes traveling-wave semiconductor laser amplifier stucture", IEEE Photonics, technology letter vol.10,no.11, Nom.,1998.
【30】Bendelli . "Taper-shape dependence of Tapered-Waveguide Traveling-Wave Sameconductor Laser Amplification" IEICE Trans. Electron. vol.E77-c, no.4, pp.624, April, 1994
【31】 H. Ghafouri-Shiraz, Pen Wei Tan, and T. Aruga, "Pecosecond Pulse Amplification in Tapered-Waveguide Laser-Diode Amplifiers", IEEE J. Selected Topics in Quantum Electronics, vol.3, #2, pp.210-217, 1997
【32】 B. Dagens, S. Balsamo, and I. Montrosset, "Picosecond Pulse Amp-lification in AlGaAs Flared Amplifiers", IEEE J. Selected Topics in Quantum Electronics, vol.3, #2, pp.233-244, 1997
【33】 Alan Mar, Roger Helkey, John Bowers, David Mehuys, and David Welch, "Mode-Locked Operation of Master Oscillator Power Amp-lifier", IEEE Photonics Tech. Lett., vol.6, #9, pp.1067-1069, 1994
【34】 Lew goldberg, D. Mehuys, and D. Welch, "High Power Mode-Locked Compound Laser Using a Tapered Semiconductor Amplifier", IEEE Photonics Tech. Lett., vol.6, #9, pp.1070-1072, 1994
【35】王聖安,、漸寬增益區半導體雷射放大器應用的研究:波長調變與飛秒放大", 國立交通大學光電工程研究所碩士論文, 1998
【36】See for example, Proceedings of the Toical Meetings on Advanced Solid State Lasers, 1994 and 1995, Optical Society of America
【37】Mark, et al., Opt. Lett. 14, 48(1989), E. P. Ippen, et al., J. Opt. Soc. Am. B 6, 1736(1989), H. A. Haus, et al., ibid., 8, 2068(1991)
【38】Negus, et al., in Advanced Solid State Lasers, G. Dub''e, L. Chase, ed., vol.10 of the OSA Conference Porceedings, 1991, pp.120-124
【39】Keller, et al., Opt. Lett. 15, 1377(1990), H. A. Haus, et al., J. Opt. Soc. Am B8, 1252(1991)
【40】J. N. Walpole, e. S. Kintzer, S. R. Chinn, C. A. Wang, and L. J. Missaggia, "High-Power strained-layer InGaAs/AlGaAs tapered tr-aveling wave amplifier", Appl. Phys. Lett., vol.61,pp.740-742, 1992
【41】G. Bendelli, K. Komori, S. Arai, and Y. Suematsu, "A New Struct-ure for High-Power TW-SLA", IEEE Photonics tech. Lett., vol.3, pp.44-44, 1991
【42】Giampaolo Bendelli, Kazuhiro Komori, and Shigehisa Arai, "Gain Saturation and Porpagation Characteristics of Index-Guided Taper-ed-Waveguide Traveling-Wave Semiconductor Laser Amplifiers(T-TW-SLA''s)", IEEE J. of Quantum Electronics, vol.28, pp.447-458, 1992
【43】 Y. Lai, K. L. Hall, E. P. Ippen and G. Eisenstein, "Short Pulse Gain Saturation in InGaAsP Diode Laser Amplifiers", IEEE Photonics Tech. Lett., vol.2, #10, pp.711-713, 1990
【44】 C. t. hultgren and E. P. Ippen, "Ultrafast refractive index dynamics in AlGaAs diode laser amplifiers", Appl. Phys Lett.,vol.59,#6, pp.635-637, 1991
【45】 Morris P. Kesler and Erich P. Ippen, "Subpicosecond gain dynamics in GaAlAs laser diodes", Appl. Phys. Lett., vol.51, pp. 1765-1767, 1987
【46】 G. Eisenstein, P. B. hansen, J. M. Wiesenfeld, R. S. Tucker, and G. Raybon, "Amplification of high repetition rate picosecond pulses using an InGaAsP traveling-wave optical amplifier", Appl. Phys. Lett., vol.53, pp.1539-1541, 1988
【47】Michael S. Stix, Morris P. Kesler, and Erich P. Ippen, "Observations of subpicosecond dynamics in GaAlAs laser diodes", Appl. Phys. Lett. vol.48, pp.1722-1724, 1986
【48】Katie L. Hall, Gadi Lenz, and Erich P. Ippen, "Femtosecond Time Domain Measurements of Group Velocity Dispersion in Diode Laser at 1.5μm", J. of Lightwave Teccnology, vol.10, pp.616-619, 1992
【49】M. Y. Hong, Y.H. Chang, A. Dienes, J. P. Heritage, P. J. Delfyett, Sol Dijaili, and F. G. Patterson, "Femtosecond Self and Cross-Phase Modulation in Semiconductor Laser Amplifiers", IEEE J. Q. E. vol.2, no.3, Sep., 1996.
【50】Y. H. Hong, I. V. Goltser, M. Jiang, M. N. Islam, and G. Raybon, "Gain dispersion induced subpicosecond pulse breakup in a fiber and semiconductor laser amplifier combined system", Appl. Phys. Lett. 69 (27), 30 December 1996.
【51】P. J. Delfyett, A. Dienes, J. P. Heritage, M. Y. Hong, and Y. H. Chang, "Femtosecond Hybrid Mode-Locked Semiconductor Laser and Amplifier Dynamics", Appl. Phys. B58, pp.183-195, 1994
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔