本論文利用微拉曼系統來探討電漿輔助化學沉積法製成的鑽石薄膜樣品與雷射剝鍍化學沉積法所製成的類鑽
石薄膜樣品, 藉以瞭解沉積環境對樣品的影響與結構上的改變. 沉積環境的改變因素有: 薄膜成長的時間,摻雜硼的
位置,與基底的溫度等.
在鑽石薄膜中,其中主要的觀察方向是鑽石在1332cm-1特性峰值的位移情形. 我們發 現在摻雜大量的硼之後會
破壞鑽石在q=0的對稱性選擇定律,使得其峰值急遽往低頻移動, 且1200cm-1附近的寬帶會越來越明顯; 這是由於
Boron的摻雜造成鑽石結構中的缺陷大量生成. 另外亦可由摻雜位置發現, 當鑽石薄膜的底層與中間層於沉積時摻雜
硼而最上層沉積不摻硼時, 拉曼譜圖所得到的半高寬最窄,薄膜品質最優良.
對於類鑽石薄膜,則可藉由G-band遷移的方向來分析的sp3鍵結與sp2鍵結比例增減, 由半高寬的變化判斷薄膜品
質的優劣, 並由D-band與G-band的相對強度瞭解何種沉積環境其石墨微晶相所含的缺陷最少.
在論文的最後,我們並對鑽石微粒做小小的實驗,試圖發現是否有苯酸強化拉曼散射的現象,盼能突破表面強化
拉曼散射均伴隨"金屬"產生的門檻.

Diamond thin films produced by MPECVD and PLD methods are characterized by Raman spectroscopy. Both the characteristic
peaks of graphite (at 1580 cm-1)and diamond (at 1332 cm-1) are seen, indicating the films consist of both types of structures. For
B-doped films, which are expected to become a p-type semiconductor, the diamond peak shifts to a low frequency at 1316 cm-1,
showing a reduction in the phonon interaction strength. The effect of the growth-time on the films structure will also be presented.

目錄
第一章 緒論 1
1-1 簡介 1
1-2 鑽石薄膜之特性與應用 3
1-3 研究動機 1
第二章 鑽石薄膜之合成方法 18
2-1 微波電漿化學氣相蒸鍍法(MPECVD) 18
2-1.1 微波電漿 18
2-1.2 化學反應過程 18
2-1.3 鑽石膜之成核方式 20
2-1.4 鑽石薄膜的備置 27
2-2 脈衝式雷射沈積法(PLD) 32
2-1.4 脈衝式雷射之沈積原理 32
2-1.2 類鑽薄膜的備置 32
第三章 拉曼散射實驗 38
3-1 拉曼散射 38
3-2 理論背景 43
3-3 微拉曼系統 48
3-3.1 光學系統 48
3-3.2 偵測系統 51
3-4 拉曼頻譜的量測 54
3-4.1 鑽石薄膜 54
3-4.2 類鑽薄膜 71
第四章 表面強化拉曼散射實驗 84
4-1 表面強化拉曼散射 84
4-2 表面強化拉曼散射實驗與其光譜分析 86
第五章 結論 94

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