本論文之研究目的在開發自陰極銅片上析鍍鎳之局部微電析製程技術，並探討微鎳柱之成長機制。實驗採用磺酸鎳及瓦茲兩種鍍浴，陽極採用直徑500及125μm白金絲。在陰陽兩極施以適當電壓時，陽極經電腦控制之單軸微動機構驅動而逐漸遠離陰極基材，隨陽極上升，鍍液中的鎳離子便在陰極平面上局部析鍍而成微鎳柱。
本研究從『靜態微電析』開始，經過『等速微電析』及『間歇微電析』等製程改良，終於成功的析鍍出直徑約5 0μm、高度＞3000μm之微鎳柱。為評估微鎳柱的局部析鍍性，本論文定義一『局部效果（ξ）』之新名詞，來作為評估準據，並由兩極間距、電析電壓及電析電流等參數的變化，來比較評估參數對微鎳柱的影響；另一方面在微鎳柱成長過程中透過OM、SEM、AFM、X-Ray繞射及輪廓掃描儀的觀察與分析，探討微鎳柱之生長機理，並提出微鎳柱之析鍍成長模型。
實驗結果顯示：（1）磺酸鎳及瓦茲鍍浴在間歇微電析製程中皆可順利長出微鎳柱，且最大成長速率為傳統電鍍速率的1000倍。（2）微鎳柱初成長階段因微陽極邊緣效應影響，呈火山狀起鍍，隨微鎳柱持續成長，有中空結構存在。（3）金屬離子擴散緩慢，導致兩極間電阻與距離無相依關係，且濃度極化與電力線分布之影響，造成微鎳柱有樹枝及環節狀結構。（4）高電流密度下成長之微鎳柱經SEM觀察，發現結構有粗大的結晶組織，且結晶顆粒之尺寸有隨著兩極固定間距的遞增而有變細的趨勢。（5）瓦茲鍍浴可獲得較細之微鎳柱結晶，磺酸鎳鍍浴可獲得較佳之局部效果，兩鍍浴皆具競爭性。

This is the second year of a "Three-Dimensional Microwinning project". The object is Micro-winning of nickel on copper substrate and has been investigated to discuss the localized growth of the Ni-deposit and its microstructure. The localized growth was defined as a ratio of the deposit height to the deposit time and radius of deposit area. Nickel sulfamate and Watts solution was used as the electrolyte, and platinum wires in 125 μm diameter were the anode. The anode was controlled to have a micro-translation by a micro-stepping motor. When optimum potentials were applied, the deposit was built on the substrate by moving the anode in the electrolyte. The gap between the anode and the substrate was initially set at 1, 10, 100μm. The anode was controlled to translate at 1, 10 and 100μm per step. Next step translation was drived as the current for the previous step beyond 20 mA. The motion of the anode was controlled by a computer PC through an interphase coupled with a dedicated software. In the present work, the influence of electrode gap and plating voltage on the localized growth of the 3D-deposit was concerned.
A faster deposition rate was obtained in this system, roughly three orders of magnitude greater than the traditional technique. The growth rate of the microdeposit was governed mainly by the electrode gap and the plating voltage. Localized growth of the deposits decreases with increasing the gap from 1 to 100μm. At a gap of 1μm , the localized growth increases with increasing the plating voltage from 5 to 8V. At a gap of 10 and 100μm, the localized growth increases to a maximum with increasing the voltage at 5~7V and then decreases gradually at 7~8V.
A deposit with fined grains structure is better then that with coarse grains in mechanical properties. Examining the microdeposits through SEM, localized growth of the deposits was compensated by coarse grains structure. Moreover, the deposit obtained at a fixed gap indicated a variation of grain size with the deposit height: the grain size decreases with increasing the height of the deposit.

摘要 Ⅰ
誌謝 Ⅲ
目錄 Ⅳ
表目錄 Ⅶ
圖目錄 Ⅷ
壹、 簡介 1
一、 研究背景 1
二、 研究目的 2
貳、 原理學說期文獻回顧 5
一、文獻回顧 5
1.1局部微電析概說 5
二、原理學說 6
2.1電鍍原理與微電析之關係 6
2.1-1物質移動程序 6
2.1-2電荷移動程序 7
2.1-3電結晶化程序 8
2.2濃差極化現象之影響 8
2.3高速電鍍理論 9
2.4微電極原理 11
2.5局部效果之定義 12
參、 實驗與設備 14
一、 製程研究之演進 14
二、 實驗前準備 14
2.1靜態微電析實驗 14
2.2等速微電析實驗 15
2.3間歇微電析實驗 15
三、 實驗流程 16
3.1靜態微電析實驗 16
3.2等速微電析實驗 16
3.3間歇微電析實驗 16
四、 使用儀器簡介 18
4.1實驗儀器 18
4.2檢測儀器 19
肆、 結果與討論 21
一、 靜態微電析實驗結果與討論 21
1.1光學顯微鏡觀察結果 21
1.2電子顯微鏡觀察結果 21
1.3原子力顯微鏡觀察結果 21
1.4靜態微電析結果討論 22
二、 等速微電析實驗結果與討論 23
2.1電析電流分析結果 23
2.2表面輪廓儀分析結果 25
2.3等速微電析實驗結果討論 26
三、 浸泡式間歇微電析實驗結果 27
3.1磺酸鎳鍍浴實驗結果 27
3.1-1電析時間固定之結果 27
3.1-2鎳結構高度固定之結果 30
3.2瓦茲鍍浴實驗結果 31
3.2-1電析時間固定之結果 31
3.2-2鎳結構高度固定之結果 32
3.3顯微鏡觀察結果 32
3.4 X光粉末繞設儀分析結果 34
四、 浸泡式間歇微電析結果討論 35
4.1微鎳柱成長形態 35
4.2成長模型之驗證 40
4.2-1微鎳柱底部之面積 40
4.2-2微鎳柱平均成長速率 42
4.2-3局部效果討論 44
4.3兩種鍍浴之差異 44
五、 針筒式間歇微電析實驗結果與討論 46
伍、 結論 48
陸、 未來展望 50
柒、 參考文獻 51
附表 55
附圖 59
附錄一、間歇微電析程式說明 135
附錄二、『銅基材之定點微電鍍鎳研究』全文 137
附錄三、『間歇微電析定點鍍鎳研究』全文 145
附錄四、『微電鍍控制系統』全文 152
附錄五、磺酸鎳之物質安全資料表 157

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