臺灣博碩士論文加值系統

本研究係採用管狀高週波電感耦合式電漿輔助化學氣相沈積系統，以SiH4/CH4/Ar、SiH4/CH4/Ar/H2之混合氣體為原料，主要的目標為在室溫下於矽晶片及石英片上合成含氫碳化矽薄膜。經由FTIR、XRD、Raman、SEM、SIMS、UV/Visible之分析鑑定，確認沈積在基板上的薄膜特性。第一階段中不加入氫氣時所沈積出的薄膜經分析尚無矽碳鍵結 (Si-C)，接著於第二階段加入氫氣當還原氣體參與反應時，可得到非晶質含氫碳化矽薄膜 (a-SiC：H)；繼而在第三階段中改變甲烷的分壓，在較小分壓時可得到具微晶結構的含氫碳化矽薄膜 ( nc-SiC：H )，藉由X-ray及Raman分析結果顯示系統最佳操作條件為rf輸入功率為 70 watts、SiH4 分壓為20 mtorr、CH4分壓為30mtorr、H2分壓為50mtorr、Ar分壓為20mtorr，薄膜沈積位置為反應腔中26cm處，所得nc-SiC：H薄膜之光能隙為2.05 eV，其折射率為2.42。

第一章 簡介 ………………………………………………………… 1
第二章 文獻回顧 …………………………………………………… 3
2.1 非晶碳化矽薄膜的特性 ……………………………… 3
2.2 各種碳化矽薄膜的分類……………………………… 4
2.3 非晶碳化矽薄膜的應用與發展歷程 ………………… 7
A. 發光性能…………………………………………… 7
B. 光電性能…………………………………………… 8
C. 機械性能……………………………………………10
D. 結構特性……………………………………………10
2.4 電漿輔助化學氣相沈積法之簡介 ……………………15
第三章 實驗方法與步驟 ……………………………………………21
3.1 系統設備 ………………………………………………21
3.2 流量與系統壓力的關係 ………………………………24
3.2.1 原理……………………………………………24
3.2.2 求各個氣體壓力時變率的步驟………………25
3.3 實驗步驟 ………………………………………………26
3.3.1 薄膜製作………………………………………26
3.3.2 薄膜量測………………………………………29
1. 厚度量測 ……………………………………29
2. 光學性質量測 ………………………………29
3. 化學鍵結分析 ………………………………29
4. 薄膜微結構及結晶性分析 …………………30
5. 表面微結構及剖面分析 ……………………30
6. 薄膜成份定性分析 …………………………30
第四章 結果與討論 …………………………………………………31
4.1 第一階段－系統分析 ……………………………..….33
4.2 第二階段－加氫氣的效果 ……………………………40
4.3 第三階段－甲烷分壓的影響 …………………………43
4.3.1光能隙的計算 ……………………………………51
4.3.2折射係數的計算 …………………………………62
第五章 結論與展望 …………………………………………………67
參考文獻 ………………………………………………………………68

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