臺灣博碩士論文加值系統

　　選擇性成長磊晶在低壓化學汽相沉積的反應爐中來長矽磊晶膜，所使用的物質是二氯矽烷和氫氣。選擇性成長的成長速率是跟覆蓋在晶圖上的氧化層厚度和分佈有關。這篇論文對於矽的成長速率提供一個數學式子，其中包括氧化層的厚度和分佈。成長速率產生變化是因為在晶圓上氧化層發生輻射熱量轉移的性質。在某個波長範圍內，矽氧化層被輻射的數量可以被算出來且隨著氧化層呈現弦波振盪。利用傳輸線原理可以計算反射率，透過反射率我們可以提供對矽成長速率變化情形計算一個可能的解釋。但因為反射率只牽涉到厚度，所以我們在加上分佈的因素作模擬。我們可以得到和實驗上類似的結果。我們也嘗試加層薄膜改變其物理特性，看看會有甚麼現象發生並且分析它。除此之外，我們將90％分布曲線的實驗值和模擬值疊在同一圖形上，然後我們試著出其一對一的關係。我的想法是將曲線分成數段。藉著使用線性或二次曲線逼近的方法，我們可以找出每個線段的關係式。愈高次的近似，所得的結果愈接近。然而所需的過程就愈複雜。模擬後所得的值，我們可以透過其關係式得到近似的成長速率並且預測它。

　　Low-temperature selective epitaxial growth (SEG) of silicon use dichlorosilane-hydrogen mixture in an LPCVD hot-wall reactor The growth rate of silicon SEG is dependent on the masking oxide thickness and percent of oxide coverage of the wafer. This thesis develops mathematican representation for thegtrowth rate of silicon that includes the dependence on oxide thickness and percent of oxide coverage. The growth rate dependence on oxide thickness and percent of oxide coverage was shown by other researchers to be due to a change in the radiation hear transfer properties of the wafer causedy by the layer of oxide. The amount of radiation reflected by the silicon dioxide was averaged over a range of wavelemgths and shown to have a damped sinusodian dependence on the oxide. By making use of tansmission line theory to calculate reflectivity we find that it can provide a possible explanation for growth rate change. Because reflectvity only involves in thicness, so we add coverage factor to simulate. We can get resemble experiment result. We also try to add thim film to change physical property, and observe shat will happen and anlyze it. Besies, we compare the experiment and simulation result of 90% OC line in the same figure, them we try to find the one to one relationship My ideal is to divide the line to several segments. By using linear or quadratic approach method, we can search the relation of my segments The high degree approaches, the correct result will be . However, the process which dealing with high degree approach is more complicated. after simulating, we canget similar growth rate result through Equation relationship and predict it.