臺灣博碩士論文加值系統

在深次微米半導體製程中，由於微影曝光解析度的增加，伴隨著景深的縮減以及元件的密度增加與多層導體連線的必要等因素，使全區域平坦化(Global Planarization)技術成為深次微米半導體製程中的基本關鍵技術。而化學機械平坦化(Chemical Mechanical Planarization)是目前唯一可達全區域平坦化之技術，但由於複雜動態之化學與機械作用，製程所導致的不均勻性，至今尚未有完整之解析。
本研究建立一化學機械平坦化之材料移除模式，其隨晶圓片與研磨墊之相對速度的三分之一至三分之二次方成正比，並以IPEC CMP機台及Peter-Wolters行星式運動CMP機台進行實驗，且在前人之實驗結果中獲得證實。
吾人並進行運動學分析，期能深入瞭解各速度參數對材料移除的影響。無論單頭或行星式機台，當研磨墊轉速與晶圓片轉速相等時（行星式機台則為晶圓片自轉轉速），晶圓片上任一點之相對加工速度均相同。結合上述材料移除模式及運動學分析，吾人對化學機械平坦化中的不均勻性予以解析，實驗結果與預期相吻合。

In deep-submicron semiconductor manufacturing, due to tighter budget of the depth of focus in lithography, a global planarization technique is desired. Chemical mechanical planarization (CMP) is the only process to achieve the global planarization. However, the complex dynamic chemical and mechanical effects during CMP impede the establishment of a sound analysis of the process-induced nonuniformity.
The study derives a material removal model, which predicts the material removal rate is proportional to the relative velocity between the wafer and the pad by the power between 1/3 to 2/3. Experimental results by the single-head and the planetary-train machines agree with the prediction. The support is also found in independent experimental data.
The kinematic analysis is conducted to investigate the effects of the kinematic parameters. When the pad velocity equals to the carrier velocity (or the resulted carrier rotational velocity in the planetary-train machine), the relative velocity remains constant across the wafer called "Absolute Velocity Uniformity". The nonuniformity is analyzed based on the above material removal model and the kinematic study. The experimental results agree with the prediction.

COVER
CHINESE ABSTRACT
ABSTRACT
ACKNOWLEDGEMENTS
CONTENTS
FIGURE AND TABLE CAPTIONS
NOMENCLATURE
CHAPTER ONE INTRODUCTION
1.1 Chemical Mechanical Planarization
1.2 Problem Statement
1.3 Thesis Outline
CHAPTER TWO LITERATURE SURVEY
2.1 Mechanism of Material Removal
2.2 Nonuniformity
2.3 Features of CMP Machine Tools
CHAPTER THREE EXPERIMENTAL METHODS
3.1 Sample Preparation
3.2 Processing Procedure
3.3 Thickness Measurement
CHAPTER FOUR NONUNIFORMITY ANALYSIS: PART I MATERIAL REMOVAL ANALYSIS
4.1 Introduction
4.2 The Bear-and-Shear Process
4.3 Material Removal Model
4.4 Experimental Results and Discussions
4.5 Concluding Remarks
CHAPTER FIVE NONUNIFORMITY ANALYSIS: PART II KINEMATIC ANALYSIS
5.1 Single-Head CMP
5.2 Planetary-Train CMP
5.3 Concluding Remarks
CHAPTER SIX INTEGRATED NONUNIFORMITY ANALYSIS
6.1 Model Derivation
6.2 Effects of Kinematic Variables
6.3 Experimental Results and Discussions
6.4 Concluding Remarks
CHAPTER SEVEN CONCLUSIONS AND RECOMMENDATION FOR FUTURE RESEARCH
7.1 Conclusions
7.2 Recommendation for Future Research
Reference
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莊達人，"VLSI製造技術"，1995年，高立圖書有限公司
蘇世傑，交大次微米人才培訓班，"下一代深次微米製程技術暨設備技術專論(二)"講義, 1996年