臺灣博碩士論文加值系統

摘要
本論文使用反應式濺鍍的方式, 使用Ar和N2的混合來當作濺鍍時的氣體, 分別濺鍍出TaN和TaSiN薄膜。在靶材使用方面, TaN薄膜使用純Ta靶材, TaSiN薄膜則是使用3吋純Ta靶材在夾上切一半的3吋Si wafer。在量測方面, 我們利用四點探針(four point probe), X光繞射(XRD), 歐傑電子能譜(Auger)來了解薄膜的電阻率, 晶相, 和原子組成比例。在薄膜熱穩定性方面, 我們用歐傑電子能譜來判斷Cu原子的擴散情形。另外將TaN和TaSiN薄膜分別鍍在Cu/擴散阻障層(200A)/P+-N 結構上經過不同溫度的熱燒結, 量測反向偏壓5V時的漏電流, 來了解TaN和TaSiN的熱穩定性。
在TaSiN薄膜方面, 經過電阻率, X光繞射(XRD)和 歐傑電子能譜(Auger)量測得知, TaSiN的電阻率在as-deposited時會隨著Ta含量的變少而上升。 經過快速升溫退火之後, 靠近Si那側的樣品, 電阻率會大幅下降。 這是因為矽含量多, 經過快速升溫退火之後, 容易形成Ta 金屬矽化物。
在TaN薄膜方面, 經由電阻率和XRD量測得知, TaN的電阻率會隨著N2含量的增加而上升。經過RTA之後, TaN peak 的半高寬變窄, 顯示有較多的TaN晶粒形成。 另外還有β-Ta晶相消失和氧化物Ta2O5, TaO2出現的現象, 這些原因都會使得電阻率上升。
在薄膜熱穩定性方面, 對於Cu/TaN(200A)/P+-N的結構可穩定到550℃/30min, 反向偏壓5V時的漏電流未明顯上升。對於Cu/
TaSiN(200A)/P+-N的結構來說, 經過650℃/30min的sintering之後, 仍相當穩定, 未見漏電流大幅上升。

Abstract
TaN and TaSiN were deposited in an Ar/N2 discharge by reactively sputter . TaN was deposited from Ta target and TaSiN was deposited from Ta target with one half of Si wafer. Analysis of resistivity , texture , atom concentration, inter-diffusion phenomena were carried out by four point probe, XRD, Auger and leakage current.
For as-deposited TaSiN film, we can obtain resistivity rising with concentration of Ta. XRD shows the amorphous phase. After RTA process, resistivity of the sample with higher Si concentration can be
reduced rapidly. It is due to Ta silicide formation after RTA.
For as-deposited TaN film , the resistivity of TaN rise with the concentration of N2. After RTA, more TaN grains appear. The resistivity
increases, too. The TaN(111) broad peak also indicates the co-existence of Ta2O5(290) and TaO2(101).
Leakage current of Cu/diffusion barrier /P+-N diode was used to investigate barrier performance. The sample of Cu/TaSiN(200A)/P+-N
still shows very good resistance against degradation after sintering at 650℃, for 30min. But leakage current measurement of Cu/TaN(200A)/P+-N diodes sintered at 650℃ for 30min show degraded.

目錄
第一章 序論 1
第二章 擴散阻障層的基本觀念 3
2.1 擴散障礙層的原理 3
2.2 擴散障礙層的特性 3
2.3 擴散障礙層的種類 4
2.4 擴散係數 5
第三章 量測原理 7
3.1 片電阻 7
3.2 X光繞射 7
3.3 歐傑電子能譜 8
3.4 漏電流分析 9
第四章 實驗 13
4-1 樣品製作 13
4-1-1 薄膜樣品 13
4-1-2 銅/擴散阻障層/P+N接面二極體樣品 14
4-2 樣品分類 15
4-3 物性量測 16
4-3-1 電阻率 16
4-3-2 X光繞射 17
4-3-3 歐傑電子能譜 17
4-3-4 電性量測 17
第五章 結果與討論 20
5-1 薄膜特性 20
5-1-1 電阻率 20
5-1-2 歐傑電子能譜分析 21
5-1-3 X光繞射分析 22
5-2 薄膜熱穩定性 24
5-2-1 歐傑電子能譜分析 24
5-2-3 漏電流分析 24
第六章 結論 47
參考文獻 48

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