在本篇論文中,我們論述了DBR半導體雷射次半微米光柵的製作，以及對干涉成像微影術的研究。在次半微米光柵的製作方面，我們應用全像式干涉來形成周期均勻﹑高解析的光柵，而這種方法是相當經濟的。在任意圖樣的成像微影術方面，我們應用干涉成像微影術來擴展光學微影術的解析能力，達到超越成像系統特性限制的目標。偏軸照明將空間高頻成分降低至光學系統可處理的程度，而由一參考光干涉來回復圖形原來的空間頻率。我們設計了可用於干涉成像微影術的折射式與反射式系統並加以分析。我們運用這種概念，以一個低NA的系統製作出次微米的圖案。而這在傳統光學微影理論下是不可能達到的。

We demonstrated the fabrication of sub-half-micron grating for DBR laser and the study of imaging interferometric lithography (IIL) in this thesis. The sub-half-micron grating is fabricated by the exposure of holographic interference which is an economical method to form a uniform and high resolution grating. For the topic of arbitrary pattern imaging lithography, IIL is applied to extend the resolution of optical lithography to exceed the low-pass spatial frequency (NA/) filter characteristics of the imaging system. Off-axis illumination downshifts the high frequency components of the mask pattern and an interferometric reference beam at the wafer upshifts these frequency components back to their original spatial frequencies. Both refractive and reflective system that can be used for IIL are designed and analyzed. A sub-micron pattern is printed with a simple optical system of restricted NA, that is impossible in the criterion of conventional optical lithography.

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