# 臺灣博碩士論文加值系統

(18.232.177.219) 您好！臺灣時間：2022/06/25 21:34

:::

### 詳目顯示

:

• 被引用:0
• 點閱:442
• 評分:
• 下載:0
• 書目收藏:0
 我們利用轉換矩陣方法嚴格求解自由電子模型近似下的三維水丁格方程式，必據以計算單位壘和雙位壘磁性穿隧元件的電流自旋極化和磁阻效應。在單位壘元件的計算中，我們發現磁阻效應將隨偏壓增大而變小，在某些偏壓範圍甚至呈現負直，並隨偏壓變化有一震盪的關係。在雙位壘元件的研究中，我們發現共振穿隧能級扮演一個很重要的角色，適當的設計共振能級的位置可以達到最佳磁阻和自旋電流極化源的效果。
 Current spin polarization and tunneling magnetoresistance (MR) of single and double magnetic tunneling junctions have been calculated within the free electron model by solving rigorously the 3D Schrodinger equation for different bias voltages and barrier widths. For single barrier junction, it is found that in general, the MR would decrease with voltage and become negative at some large voltages, a trend in agreement with both earlier and recent experiments. Also, it is revealed that for certain barrier widths, the MR would oscillate with bias voltage which is a prediction to be confirmed by experiments. We also describe a principle for designing double barrier magnetic tunneling structure that could produce spin current with controllable spin direction or have optimal spin valve effect. The principle is based on the finding that by tuning the energy position of spin dependent resonant tunneling level of a double barrier junction, fully spin-polarized current and optimal MR effect could be readily achieved.
 Contents 1 Introduction 2 Model and Method 2.0 The model 2.1 Transfer Matrix Method 2.2 Interpretation of M matrix 2.3 Current integration 3 Single Barrier TMR 3.1 Transmission Coefficient - Dispersion Relation 3.2 Current Plot and TMR Analysis 4 Double Barrier TMR 4.1 Configuration of Magnetization Axes 4.2 Spin Valve 4.3 Spin current source 4.3.1 Type I: NM/Is/Ic/FM/Ic/Is/NM structure 4.3.2 Type II: S/I/FM/I/S structure 5. Summary and Disscussion References
 References1. J.S. Moodera, Lisa R. Kinder, Terrilyn M. Wong, and R. Meservey, Phys. Rev. Lett., 74, 3273, (1995).2. J. S. Moodera and Lisa R. Kinder, J. Appl. Phy., 79, 4724 (1996).3. M. Julliere, Phys. Lett., 54A, 225 (1975).4. J. C. Slonczewski, Phys. Rev., B 39, 6995 (1989).5. T Miyazaki, et. al., J. Phys. D: Apply. Phys. 31, 630 (1998).6. Manish Sharma, et. al., Phys. Rev. Lett., 82, 616 (1999).7. A. Voskoboynikov, et. al., Phys. Rev. B, (1999).8. V. V. Paranjape, Phys. Rev. B 52, 10740 (1995)..9. Xiangdong Zhang, et al., Phys. Rev. B 56, 5484 (1997).10. S. T. Chui, Phys. Rev. B 55, 5600 (1997)11. A. M. Bratkovsky. Phys. Rev. B 56, 2344 (1997)..12. J. S. Moodera, et al. Phys. Rev. Lett. 70, 853 (1993).13. Mary Beth STEARNS, J. Mag. Mag. Material 5 167 (1977)14. Principles of Electron Tunneling Spectroscopy, E.L. Wolf (Oxford, Oxfordshire, 1985)15. Handbook of Mathematical Functions, edited by M. Abramowittz and I. A. Stegun (Dover, New York, 1965).16. X. Hao, et al., Phys. Rev. B 42, 8235 (1990).17. J. L. Simonds, Physics Today, Apiral, 26 (1995)
 國圖紙本論文
 推文當script無法執行時可按︰推文 網路書籤當script無法執行時可按︰網路書籤 推薦當script無法執行時可按︰推薦 評分當script無法執行時可按︰評分 引用網址當script無法執行時可按︰引用網址 轉寄當script無法執行時可按︰轉寄

 1 直流電影響微米自旋閥元件翻轉行為之研究 2 以磁電傳輸研究次微米鎳鐵/銅/鎳鐵三層結構平板線之磁矩翻轉

 無相關期刊

 1 3d過渡金屬的結構性質和彈性係數之梯度密度泛函理論計算 2 砷化(鋁,鎵)量子井,氫原子在銅表面上吸附行為和粒子吸附機制的計算 3 BGO晶體(Bi4Ge3O12)的抗輻射性研究及B0→K*0π0衰變之電腦模擬 4 前置量能器之Geant模擬與事件監測 5 對矽(001)表面因應力影響而產生高低起伏變化的研究 6 硒化鎘量子點的成長及特性 7 碲化硫鋅三元量子點的成長及特性分析 8 鐵/鐵鉛氧化合物/鈷三層膜系統的磁電阻效應研究 9 以克爾磁光效應精確測量Y//3\\Fe//5\\O//12\\薄膜 10 藉由粒子影像測速及正交特徵分解辨認近域尾流之大尺度相干性結構 11 太陽能轉子的模擬分析與實驗之研究 12 BGA半導體銅線封裝製程多目標最佳化研究 13 電化學加工用碳化鎢電極之絕緣披覆層研究 14 公開市場股票購回的策略 15 GJMA-一個泛用的Java行動應用程式開發平台

 簡易查詢 | 進階查詢 | 熱門排行 | 我的研究室