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研究生:杜杰鍠
研究生(外文):Tu,Chieh-huang
論文名稱:以量測雜訊研究半導體載子生命期
論文名稱(外文):Study of the carrier lifetimes in semiconductors by noise measurement
指導教授:管傑雄管傑雄引用關係
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電機工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:英文
論文頁數:58
中文關鍵詞:生命期產生復合雜訊半導體
外文關鍵詞:lifetimegeneration-recombination noisesemiconductor
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在光學元件的研究中,元件的雜訊特性是十分重要的。為了瞭解元件中本質雜訊了物理機制,我們架設了雜訊量測系統來量測在不同偏壓及溫度下元件的雜訊特性。
為了減少系統本身的雜訊,我們小心的連接系統的每一個部份,以減少拾升雜訊以及由放大器本身所產生的雜訊,並以精密電阻在不同溫度下的雜訊值來確認系統的精準度。
對作為光偵測器、雷射或其他光學元件的材料而言,載子的生命期無疑扮演了極重要的角色。而在大部分的情況下,載子生命期由少數載子所決定。然因其少數載子的特性,要量測少數載子的相關參數是相當不容易的。我們在此論文中提出一個以雜訊量測來研究載子生命期時間的方法,也獲得了初步的成果。同時藉由照射紅外線亦可量測有關材料內部雜質的特性。

For the purpose to understand the physical mechanism of noise which is important in the photo-devices, we set up a noise measurement system to measure the noise performance of a device at various bias and temperature.
To reduce the noise in the system itself, we connect the whole system carefully and especially pay attention to the pick-up noise from the ground loop and the correlation noise form the correlated voltage and current noise generator of the amplifier. We calibrate the system with the accuracy resistors at different temperature. The experimental data prove the accuracy of the noise measurement system.
In material destined for photodetectors, Lasers and other photo-devices the recombination lifetimes of the carriers play a significant role in determining the device performance. However the characteristic of the minority carriers makes it difficult to measure the minority carriers lifetime and the related properties while the minority carriers is of the most important in considering material’s properties for most cases. We raise a method in this thesis to investigate the carriers lifetimes by noise measurement and show the result of the experiment. By illuminating the sample with infrared light can also detect the characteristic of the impurities in a semiconductor.

Content
1 Introduction………………………………………………….1
2 The Noise Measurement System……………………………4
2.1 Introduction………………………………………………………4
2.2 Noise Measurement System Model……………………………...5
2.3 The Cooling System……………………………………………..9
2.4 Calibration of the Temperature…………………………………11
2.5 The DC Source…………………………………………………14
2.6 Conclusion……………………………………………………...18
3 Calibration of Noise Measurement System………………19
3.1 Introduction…………………………………………………….19
3.2 Calibration Procedure of Noise Measurement System…………20
3.3 Noise Measuring Zone of System………………………………26
3.4 Conclusion……………………………………………………...28
4 Carrier Lifetime Investigation by Noise Measurement….29
4.1 Introduction……………………………………………………..29
4.2 Electron-Hole Recombination Mechanism……………………..31
4.3 Direct band-to-band Recombination……………………………33
4.4 Indirect Recombination
via Deep Energy Levels in the Band Gap……………………...34
4.5 Lifetime of the N-type Material………………………………..36
4.6 Photocurrent…………………………………………………….39
4.7 Photocurrent Noise……………………………………………..41
4.8 Experiment Setup……………………………………………….42
4.9 Experiment Results……………………………………………..44
4.10 Conclusion…………………………………………………….53
5 Conclusion………………………………………………….54
Reference……………………………………………………..56

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