|
[1] T. Yokoyama, etc.," Low current dissipation pseudomorphic MODFET MMIC power amplifier for PHS operating with a 3.5 V single voltage supply", in GaAs IC Symp. Tech. Dig., 1996, pp. 107-110. [2] H. Ono, etc., " Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9 GHz PHS standards", in IEEE MTT-S Dig., 1996, pp. 547-550. [3] M. Hirose, etc., "A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply," in GaAs IC Symp. Tech. Dig., 1996, pp.237-240. [4] T. Kunihisa, etc.," High efficiency, low adjacent channel leakage GaAs power MMIC for digital cordless telephone," in IEEE MTT-S Dig., 1994, pp. 55-58. [5] M. Nagaoka, etc., " A refractory WNx/W self-aligned gate GaAs power MESFET for 1.9-GHz digital mobile communication system operating with a single low voltage supply," in Ext. Abstr. Int. Conf. On Solid State Devices and Materials, 1993, pp. 703-705. [6] Kazumi Nishimura, etc., " High-performance 0.1-um-self-aligned-gate GaAs MESFET technology," IEEE Trans. Electron Devices, vol. 44, pp.2113-2119, 1997. [7] M. Shur and L. F. Eastman, “Ballistic transport in semiconductors at low temperature for low-power high-speed logic, “ IEEE Trans. Elec. Devices, voll ED-26, pp.1677-1683, 1979. [8] Y. Awano, etc., “ Monte Carlo particle simulation of GaAs submicron n+in+ diode,” Electron Lett., vol.18, pp. 133-135, Feb. 1982. [9] Y. Awano, etc., “ Principles of operation of short-channel gallium arsenide field-effect transistors determined by Monde Carlo method, “ IEEE Trans. Electron Devices, vol. ED-31, pp. 448-452, Apr. 1984. [10] Y. Awano, etc. “Performance and principles of operation of GaAs ballistic FET,” in IEDM Tech. Dig., 1983, pp. 617-620. [11] Y. Awano, etc. ”Monte Carlo particle simulation of a GaAs short-channel MESFET ,” Electron. Lett., vol. 19, pp. 20-21, 1983. [12] P. C. Chao, etc., “dc and microwave characteristics of sub-0.1-um gate length planar-doped pseudomorphic HENT’s,” IEEE Trans. Electron. Devices, vol. 36, no. 3, pp. 461-471, 1989. [13] W. J. Jones, etc., “ Very low-noise HEMT’s using a 0.2 um T-gate,” Electron. Lett., vol. 23, no. 16, pp. 844-845, 1987. [14] K. Hosogi, etc.,” Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs” Electronics Letters, vol. 27 no. 22, 1991. [15] G. M. Metze, etc. “A dielectric-defined process for the formation of T-gate Field-effect transistors”, IEEE Microwave and guided wave letters, vol.1, no.8, 1991. [16] E. Y. Chang, etc. “Submicron T-shaped gate HEMT fabrication using deep-UV lithography”, IEEE Electron Device Letters, vol. 15, no.8, 1994. [17] Shigeki Wada, etc. “0.2-um fully-self-aligned Y-shaped gate HJFET’s with reduced gate-fringing capacitance fabricated using collimated sputtering and electroless Au-plating”, IEEE Transactions on Electron Devices, vol. 45, no. 8, 1998. [18] Shigeki Wada, etc., "A 0.1-um double-deck-shaped gate HJFET with reduced gate-fringing-capacitance for ultra-high-speed ICs." IEEE GaAs IC Symp. Tech. Digest, 1997, pp.70-73. [19] M. Feng, etc., “ Does two dimensional electron gas effect contribute to high frequency and high speed device performance?” Appl. Phys. Lett., vol. 59, no. 19, pp. 1233-1235, 1991. [20] G. Y. Robinson, " Metallurgical and electrical properties of alloyed Ni/Au-Ge films on n-type GaAs ", Solid-State Electronics, 1975, Vol. 18, pp. 331-342. [21] N. Braslau, etc., " Metal-Semiconductor contacts for GaAs bulk effect devices ", Solid-State Electronics, Vol.10, pp. 381-383. [22] M. Heiblum, etc., " Characteristics of AuGeNi ohmic contacts to GaAs ", Solid-State Electronics, Vol. 25, No. 3,pp. 185-195,1982. [23] R. Williams, in Modern GaAs Processing Methods, Artech House, Norwood, p.221, 1990. [24] Yao-Wen Hsu, Master Thesis, Dept. Electrical Engineering, National Taiwan University, 1998. [25] J. L. B. Walker, "Introduction and Basic Theory", Ch.1, High-Power GaAs FET Amplifiers, Artech House. [26] D. M. Snider, "A theoretical analysis and experimental confirmation of the optically loaded and overdriven RF power amplifier." IEEE Trans. Electron Devices, vol. 14, pp. 851-857, December 1967. [27] J.-L. Lee, etc., “A GaAs power MESFET operating at 3.3 V drain voltage for digital dand-deld phone, “ ETRI J., vol. 16, pp. 1-11, 1995. [28] H. Ono, etc., ” 2 V-operation pseudomorphic power HEMT with 62% power-added efficiency for cellular phones, “ IEDM Dig., Dec. 1994, pp. 899-902. [29] Nien-Show Ho, Master Thesis, Dept. Electrical Engineering, National Taiwan University, 1997.
|