[1] Charles S. Smith, “Piezoresistance Effect in Germanium and Silicon”, Physical Review, Vol. 94, pp.42-49, 1954
[2] W.P. Mason and R.N. Thurston, "Use of Piezoresistive Materials in the Measurement of Displacement, Force, and Torque", Journal of the Acoustical Society of America, Vol. 29, No. 10, pp.1096-1101, October 1957
[3] O.N. Tufte and E.L. Stelzer, “Piezoresistive Properties of Silicon Diffused Layers”, Journal of Applied Physics, Vol. 34, No. 2, pp.313-318, February 1963
[4] Yozo Kanda, “A Graphical Representation of the Piezoresistance Coefficients in Silicon”, IEEE Transactions on Electron Devices, Vol. ED-29, No.1, January, pp.64-70, 1982
[5] Kazuji Yamada, Motohisa Nishihara, Satoshi Shimada, Masanori Tanabe, Michitaka Shimazoe, and Yoshitaka Matsuoka, “Nonlinearity of the Piezoresistance Effect of p-Type Silicon Diffused Layers”. IEEE Transactions on Electron Devices, Vol. ED-29, No. 1, pp.71-77, January 1982
[6] H.C.J.M. Van Gestal, A. Bossche, and J.R. Mollinger, "On-Chip Piezoresistive Stress Measurement in Three Directions", Sensors and Actuators A., Vol. 25-27, pp.801-807, 1991
[7] Richard C. Jaeger, Jeffrey, Martin T. Carey, and R. Wayne Johnson, “Off-Axis Sensor Rosettes for Measurement of the Piezoresistive Coefficients of Silicon”, IEEE Transactions on Components, Hybrids, and Manufacturing Technology, Vol. 16, No. 8, pp.925-931, 1993
[8] 童若峻,壓阻式微型加速度計之設計與製造,國立台灣大學機械工程研究所碩士論文, 1995[9] J.J. Wortman and R.A. Evans, “Young’s Modulus, Shear Modulus, and Poisson’s Ratio and Germanium”, Journal of Applied Physics, Vol. 36, No. 1, pp.153-156, January 1965
[10] 林容生,半導體感測器壓阻形狀之最佳化設計,國立台灣大學機械工程研究所博士論文, 1998[11] J.T.L. Thong, W.K. Choi, C.W. Chong, “TMAH etching of silicon and the interaction of etching parameters ”, Sensors and Actuators A, Vol. 63, No. 3, pp.243-249, Dec 1997