臺灣博碩士論文加值系統

本論文所設計及製作之微機械微波開關分別製作於砷化鎵晶片及矽晶片上，因為製程中只需一道光罩，故大幅降低實驗中的難度以提高成功率；此外另一微波開關之設計完全依循專業晶圓代工廠之CMOS設計要求，其後製程只需進行無蝕刻擋罩之乾蝕刻即可完成。驅動此微波開關所需之靜電壓也不大，約18伏特即可開始動作。
此微機械微波開關是由兩個靜電式平行四邊形致動器、一個共面波導及兩個T型夾子所組成。先以金屬定義出微波開關之形狀，最後藉由對砷化鎵或矽基材的乾蝕刻，可使微結構體懸浮於基材上而具有活動性。
當未施加電壓於致動器時，此致動器便不推動T型夾子，使微波訊號在共面波導中傳遞不受影響，如同一般導通時的狀況；相反的，如施加電壓於致動器時，致動器將推動T型夾子往共面波導的方向移動，使微波訊號受到T型夾子的干擾而造成不導通的情形。
此外，論文中提出一個和CMOS標準製程完全相容的微波開關，此微波開關能和RF電路整合在單一晶片上，相信在未來的無線通訊上有很大的潛力。

This work fabricates micromachined microwave switches on GaAs and Si substrates. The difficulties of process are decreased by only needing one mask. Another microwave switch uses the conventional CMOS process. This switch is fully compatible with an IC foundry service, and the post-process is completed with maskless dry etching. In addition, the switches only require a low dc voltage of around 18 V for electrostatic traction.
The micromachined microwave switches consist of two electrostatic parallelogram actuators, two T-type grippers and one coplanar waveguide on GaAs or Si substrate. I use metal to pattern the shapes of microwave switches. The microstructures are suspended over GaAs or Si substrate by dry etching the substrates.
Without an applied voltage, the actuators do not affect the CPW, accounting for why T-type grippers of actuators do not couple to microwave propagation. With an applied voltage, dc voltage is applied to the actuators to make T-type grippers contact with the signal line of CPW. The capacitance coupling becomes significantly larger than the first one to intercept microwave propagation.
In addition, this work provides a novel conceptual microwave switch with a fully compatible CMOS process on silicon substrate. The switch proposed herein has a monolithic integration capability with RF circuits and is highly promising for future applications in communications.

目 錄
中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
圖表列 vii
第一章 緒論 1
1.1 前言1
1.2 研究動機 2
1.3 文獻回顧 4
1.4 研究方法 6
1.5 章節提要 8
第二章 設計原理 9
2.1 微波開關操作原理 9
2.2 靜電式平行四邊形致動器操作原理 11
2.3 GaAs微波開關之結構設計 14
2.4 Si微波開關之結構設計 15
2.5 CMOS微波開關之結構設計 16
第三章 微波開關製程 19
3.1 GaAs微波開關製程 19
3.1.1 製作流程 19
3.1.2 光罩製作 21
3.1.3 微影 23
3.1.4 蒸鍍及掀舉金屬 24
3.1.5 非等向性蝕刻砷化鎵 25
3.1.6 蒸鍍及非等向性蝕刻鋁 26
3.1.7 成長及非等向性蝕刻二氧化矽 26
3.1.8 等向性蝕刻砷化鎵 27
3.2 Si微波開關製程 29
3.2.1 製作流程 29
3.2.2 光罩製作 31
3.2.3 成長二氧化矽及氮化矽 33
3.2.4 微影 33
3.2.5 蒸鍍及掀舉金屬 34
3.2.6 非等向性蝕刻二氧化矽及氮化矽 34
3.2.7 非等向性蝕刻矽 35
3.2.8 蒸鍍及非等向性蝕刻鋁 37
3.2.9 成長及非等向性蝕刻二氧化矽 37
3.2.10 等向性蝕刻矽 38
3.3 CMOS微波開關製程 40
3.3.1 製作流程 40
3.3.2 非等向性蝕刻二氧化矽 42
3.3.3 非等向性蝕刻矽基材 43
3.3.4 成長及非等向性蝕刻二氧化矽 45
3.3.5 等向性蝕刻矽基材 46
3.4 乾蝕刻 48
3.4.1 非等向性蝕刻矽 48
3.4.2 等向性蝕刻矽 51
3.4.3 蝕刻深度尺 55
第四章 微波開關量測 59
4.1 微波開關性能量測 59
4.2 S-parameter量測結果 60
4.3 操作電壓量測結果 62
第五章 結論 63
5.1 實驗結果討論 63
5.2 成果與未來展望 65
參考文獻 67
圖 表 列
表(1)SF6蝕刻silicon的參數及結果51
圖(1-1)夾子未動作下訊號導通6
圖(1-2)夾子動作下訊號不導通6
圖(1-3)未受靜電力吸引7
圖(1-4)受靜電力吸引7
圖(2-1)未施加靜電壓10
圖(2-2)施加靜電壓10
圖(2-3)致動器未變形前12
圖(2-4)致動器變形後12
圖(2-5)微波開關之上視圖12
圖(2-6)GaAs微波開關結構之側剖面圖14
圖(2-7)Si微波開關結構之側剖面圖15
圖(2-8)台積電0.6 m SPTM製程之側剖面16
圖(2-9)共面波導之上視圖17
圖(2-10) 共面波導之側面剖視圖17
圖(2-11) 致動器之上視圖18
圖(2-12) 致動器之側視圖18
圖(3-1)GaAs微波開關的製作流程19
圖(3-2)GaAs微波開關光罩22
圖(3-3)顯影後光阻的厚度24
圖(3-4)掀舉金屬後3 m間距的結果24
圖(3-5)乾蝕刻砷化鎵基材深度達15.5 m25
圖(3-6)微結構懸浮於砷化鎵基材上28
圖(3-7)Si微波開關的製作流程29
圖(3-8)Si微波開關光罩32
圖(3-9)掀舉金屬後3 m間距的結果34
圖(3-10) 蝕刻二氧化矽及氮化矽35
圖(3-11) 乾蝕刻矽基材深度達3.3 m36
圖(3-12) 微結構懸浮於矽基材上39
圖(3-13) CMOS開關的製作流程40
圖(3-14) 蝕刻二氧化矽深度達5 m43
圖(3-15) 深蝕刻矽基材達5 m44
圖(3-16) 微結構表面成長4000 Å的PECVD二氧化矽46
圖(3-17-1) 平行四邊形致動器懸浮於矽基材上47
圖(3-17-2) T型夾子懸浮於矽基材上47
圖(3-18-1) CF4非等向性蝕刻矽之示意圖48
圖(3-18-2) 矽基材上有2000-3000 Å的SixCyFz等非揮發性物質49
圖(3-19) 右圖為SiC4蝕刻矽基材；左圖為CF4+O2蝕刻矽基材50
圖(3-20) 蝕刻時間與蝕刻深度之關係52
圖(3-21-1) 未蝕刻前52
圖(3-21-2) 蝕刻5分鐘52
圖(3-21-3) 蝕刻10分鐘52
圖(3-21-4) 蝕刻15分鐘52
圖(3-21-5) 蝕刻20分鐘53
圖(3-21-6) 蝕刻25分鐘53
圖(3-22) 致動器之側視圖54
圖(3-23) CMOS微波開關的上視圖55
圖(3-24) 第一種蝕刻深度尺的上視圖56
圖(3-25) 第一種蝕刻深度尺的側面示意圖56
圖(3-26) 第二種蝕刻深度尺脫離矽基材58
圖(4-1)高頻訊號探針及直流電壓探針的量測接點59
圖(4-2)GaAs微波開關的的高頻訊號量測結果60
圖(4-3)Si微波開關的的高頻訊號量測結果61
圖(4-4)CMOS微波開關的的高頻訊號量測結果62
圖(5-1)修改後之共面波導63
圖(5-2)將微波傳輸線下方的矽基材掏空64

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