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研究生:戴綺芃
研究生(外文):Tai Chi-peng
論文名稱:應用介電質共振器於X頻帶振盪器的設計
論文名稱(外文):Design of an X-band Dielectric Resonator Oscillator
指導教授:黃進芳黃進芳引用關係
指導教授(外文):Huang Jhin-fang
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:電子工程系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:57
中文關鍵詞:介電質共振器介電質振盪器串聯迴授X頻帶
外文關鍵詞:Dielectric ResonatorDielectric Resonator OscillatorSeries-feedbackX-band
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本論文利用介電質共振器的特性,製作出體積小、高Q值、低相位雜訊的串聯迴授方式的高頻振盪器。吾人利用50歐姆微帶線量測介電質共振器的特性,在利用CDS ( Communication Design System ) 模擬出介電質共振器的等效電路,以利於電路的設計。
吾人所採用的方法是利用在沒加入介電質共振器之前,讓其IN 略大於1,在加入介電質共振器調整所需的頻率,這樣可以使得相位雜訊降低。吾人製作的介電質振盪器其振盪頻率f0=10.9419GHz,輸出功率為7.67dBm,離中心頻率10kHz處的相位雜訊為-58.7dBc/Hz,離中心頻率100kHz處的相位雜訊為-92.22dBc/Hz,推移因素在VDD = 9-11V時為6.375MHz/V,DC-to- RF efficiency 為2.74%。

A new type of highly stabilized GaAs FET oscillator using a dielectric resonator in the series-feedback circuit has been developed. Dielectric resonators can replace traditional waveguide cavity resonators in most applications-especially in MIC structures. The resonator is small, lightweight , high Q temperature-stable and low cost. It is easy to couple RF energy into and out of the resonator.
Dielectric resonator oscillators (DROs) are ubiquitous microwave sources. It can use in a variety of communication systems desirable as low-phase-noise, fixed-frequency local oscillators (LOs). The microwave characteristic of the GaAs FET oscillator has revealed (1) DC to RF efficiency of 2.74 percent with 7.67dBm output power at 11.9419GHz. (2) a wide tuning range more than 200MHz. (3) low phase noise of -58.7dBc/Hz at offset frequency of 10kHz. (4) low phase noise of -92.22dBc/Hz at offset frequency of 100kHz. (5) pushing factor of 6.375MHz/V at VDD from 9 to 11 voltage.

目錄
頁次
中文摘要……………………………………………………………Ⅰ
英文摘要……………………………………………………………Ⅱ
目錄…………………………………………………………………Ⅲ
附圖…………………………………………………………………Ⅵ
附表…………………………………………………………………Ⅸ
第一章 緒論 ……………………………………………………1
1.1 研究動機與目的………………………………………………1
1.2 大綱……………………………………………………………2
第二章 介電質共振器……………………………………………3
2.1 介電質共振器的外觀…………………………………………4
2.2 介電質共振器的型態 ( mode ) ……………………………4
2.3 介電質共振器電磁場的分佈與分析…………………………5
2.4 品質因素 ( Quality factor ) ……………………………7
2.5 耦合因子 ( Coupling factor ) …………………………10
2.6介電質共振器的量測結果……………………………………13
2.6.1 50歐姆微帶線的量測…………………………………13
2.6.2 介電質共振器其等效電路R、L、C的量測及模擬結果13
第三章 振盪器的原理……………………………………………20
3.1 振盪原理………………………………………………………21
3.1.1 單埠 ( One- port ) 電阻振盪器………………………22
3.1.2 雙埠 ( Two- port ) 電阻振盪器………………………23
3.2 非線性主動元件……………………………………25
3.2.1 兩端接腳元件………………………………25
3.2.2 三端接腳元件………………………………25
3.3 迴授組態……………………………………………26
3.4 振盪器的雜訊 ………………………………………27
3.5 振盪器的推移效應 ( Pushing effect ) ………30
3.6 振盪器的溫度穩定度 ( Temperature Stability )…31
3.7 直流轉射頻的效益 ( DC-to-RF efficiency )………31
第四章 介電質振盪器…………………………………………32
4.1 基本電路結構 ………………………………………………32
4.1.1 穩定化結構 ( Stabilized ) ………………………32
4.1.2 穩定的結構 ( Stable ) ……………………………33
4.1.2.1 並聯迴授電路 ( Shunt feedback circuit ) 33
4.1.2.2 串聯迴授電路 ( Series feedback circuit ) 34
4.2 調諧器…………………………………………………………36
4.2.1 機械式調諧器 ( Mechanical tuning ) ……………36
4.2.2 變容器調諧器 ( Varactor tuning ) ………………38
第五章 介電質振盪器的製作……………………………………41
5.1 選用電晶體……………………………………………………42
5.2 設計偏壓………………………………………………………42
5.3 選取適當的ΓT ………………………………………………43
5.4 匹配電路………………………………………………………43
5.5 介電質振盪器的實作…………………………………………44
5.6 量測結果………………………………………………………44
第六章 結論…………………...…………………………………53
參考文獻……………………………………………………………54

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[12]Guillermo Gonzalez,Microwave Transistor Amplifiers Analysis and Design,Second edition
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[19]O. Ishihara,T. Mori,H. Sawano, and M. Nakatani,“A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit in 9-14GHz”, IEEE Trans. Microwave Theory Tech.,vol.MTT-28,No.8,pp.817-824,Aug. 1980
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