臺灣博碩士論文加值系統

本篇論文的研究目的,在於利用有機金屬鹽裂解法(MOD)製作
出品質良好的PbZrxTi1-xO3(PZT)薄膜,以及利用反應離子蝕刻(RIE)
來蝕刻電極與電容。實驗中採用了兩種結構不同的下電極(Pt/Ti/SiO2/Si
與Pt/TiN/Ti/SiO2/Si),並根據不同下電極的特性,找尋出最適合用來
鍍PZT薄膜的條件。最後,在CHF3及SF6兩種氣體氣氛下,利用RIE
來進行電極(Pt)與PZT薄膜的蝕刻。

The main subject of this study is to make good ferroelectric thin films (PbZrXTi1-XO3, PZT) deposited by metal-organic-decomposition (MOD), and to pattern PZT electrodes and capacitors with reactive-ion-etching (RIE). In our experiments, we adopted two kinds of substrates (Pt/Ti/SiO2/Si and Pt/TiN/Ti/SiO2/Si). And we had found the best PZT thin film annealing condition for each of the substrate by their characteristics. Finally, we have made an approach to pattern Pt electrode and PZT capacitor under CHF3 and SF6 atmosphere with RIE

目 錄
摘 要…………………………………………………………………Ⅰ
Abstract…………………………………………………………………Ⅱ
目 錄………………………………………………………………Ⅲ
圖表索引………………………………………………………………Ⅴ
第一章 緒言………………………………..……………………1
第二章 文獻回顧………………….……………………………2
2-1 高密度鐵電性記憶體之趨勢與發展………………………….2
2-1-1 鐵電材料於DRAM 的應用發展…………………………….4
2-1-2 鐵電材料於FeRAM的發展………………………………….14
2-2 電極與擴散阻擋層對PZT薄膜結晶性與電性的影響……………………………………………………………19
2-2-1 Pt電極與TiN/Ti擴散阻擋層的探討………………………19
2-2-2 Pt/Ti結構的下電極探討……………………………………26
2-3 應用於記憶元件之鐵電電容及其電極蝕刻技術………32
第三章 實驗方法……………………………………………37
3-1 PZT薄膜製作……………………………………………37
3-1-1 鍍膜基板之準備……………………………………………37
3-1-2 鉛、鋯、鈦的有機金屬起始原料的合成………………………………………………………39
3-1-3 鍍膜配方溶液之調配……………………………………43
3-1-4 薄膜之披覆…………………………………………………45
3-2 薄膜特性量測………………………………………………49
3-3 薄膜電性量測………………………………………………50
3-4 電極及薄膜的蝕刻………………………………………57
第四章 結果與討論…………………………………………60
4-1 以MOD在Pt/Ti/SiO2/Si基板上鍍PZT薄膜……………………………………………………………61
4-2 以MOD在Pt/TiN/Ti/SiO2/Si基板上鍍PZT薄膜……………………………………………………………67
4-3 Pt/TiN/Ti/SiO2/Si與Pt/ Ti/SiO2/Si間的差異性比較與分析……………………………………………………………73
4-4 Pt電極與PZT薄膜的蝕刻…………………………………82
第五章 結論…………………………………………………87
參考文獻………………………………………………88

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