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[1]. R.B. Fair, in “ULSI Technology” edited by C.Y. Chang, S.M. Sze,(McGraw-Hill, New York, 1996), pp. 176-179. [2]. J.liu, et al., “Transient Enhanced Diffusion and Defect Studies in B implanted Si”, Ion Implantation Technology Proceeding of 11th International Conference, pp.626-629. (1997) [3]. M.Giles, et al., “Implant Damage and Transient Enhanced Diffusion Modeling”, Solid State Technology, pp.97-104. (1998) [4]. P.A. Stolk, et al., “Physical mechanisms of Transient enhanced Dopant Diffusion in Ion-Implanted Silicon”, J. Appl. Phys.,81, pp.6031-6050.(1997) [5]. M. Orlowski, “Experimental Evidence and Interpretation of Dopant-Point Defect Pare Diffusion”, Appl. Phys. Lett., 58, pp.1479-1481.(1991) [6]. C.S. Refferty, et al., “Explanation of Reverse Short channel Effect by Defect Gradients”, IEDM’93, pp.311-314. (1993) [7]. M. Giles, “Transient Phosphorus Diffusion Below the Amorphization Threshold”, J. Electrochem. Soc., 138, pp.1160-1165.(1991) [8]. S. Solmi, et al., “Diffusion of boron in silicon during post-implantation annealing”, J. Appl. Phys., 69, pp.2135-2142.(1991) [9]. A.E. Michel, et al., “Implantation damage and the anomalous transient diffusion of ion-implanted boron”, Appl. Phys. Lett., 51, pp.487-489. (1987) [10]. A.D. Lilak, et al., “A Physics-Based Modeling Approach for the Simulation of Anomalous Boron Diffusion and Clustering Behaviors”, IEDM’97, pp.493-496 (1997) [11]. A.D. Lilak, et al., “Predictive Simulation of Transient Activation Processes in Boron-Doped Silicon Structures”, IEDM’98, pp.493-496 (1998) [12]. M. Uematsu, “Simulation of Clustering and Transient Enhanced Diffusion of Boron in Silicon”, J. Appl. Phy., 84, pp.4781-4787 (1998) [13]. M. Uematsu, “Clustering and Transient Enhanced Diffusion of B Doping Superlattices in Silicon”, Jpn. J. Appl. Phys., 38, pp.4718-4719 (1999) [14]. M. Orlowski, “A New Clustering Model for Runaway Boron Pile-up Effect”, IEDM’97, pp.505-508 (1997) [15]. G.Mannino, et al., “Role of self- and boron-interstitial clusters in transient diffusion in silicon”, Appl. Phys. Lett., 76, pp.855-857 (2000) [16]. K.S. Jones, et al., “A Systematic Analysis of Defects in Ion-Implanted Silicon”, Appl. Phys. A., pp.1-34 (1988) [17]. J. Liu, et al., “Evolution of Dislocation Loops in Silicon in an Inert Ambient-I”, Solid-State Electronics, 38, pp.1305-1312 (1995) [18]. J. Liu, et al., “Evolution of Dislocation Loops in Silicon in an Inert Ambient-II”, Solid-State Electronics, 38, pp.1313-1319 (1995) [19]. J.K. Listebarger, et al., “Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer”, J. Appl. Phys., 78, pp.2298-2302 (1995) [20]. C. Bonafos, et al., “Transient enhanced diffusion of dopant in preamorphised Si: the role of EOR defects”, Nucl. Instr. And Meth. B, 106, pp.222-226 (1995) [21]. K.S. Jonse, et al., “Diffusion of ion implanted boron in preamorphized silicon”, Appl. Phys. Lett., 68, pp.2672674 (1996) [22]. H.S.Chao, et al., “Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon”, Appl. Phys. Lett., 68, pp.3570-3572 (1996) [23]. TWUPREM-IV user’s manual [24]. L.J. Chen, et al., “Factors influencing the formation and growth of faulted loops in BF2+ implanted silicon”, J. Appl. Phys., 52, pp.3520-3526 (1981) [25].M.E. Lunnon, et al., “Furnace and Rapid Thermal Annealing of P+/N junction in BF2-implanted silicon”, J. Electrochem. Soc., 132, pp.2473-2475 (1995) [26]. Krishan Lai, et al., “Study of point defect clusters produced by BF2 implantation in silicon single crystals”, 69, pp.8092-8095 (1991) [27]. M.C. Paek, et al., “A study of lattice damage in silicon induced by BF2 ion implantation”, J. Appl. Phys., 70, pp.4176-4180 (1991) [28]. H. Kinoshita, et al., “Physical Model for the Diffusion of ion implanted boron and BF2 during RTA”, IEDM’92, pp.165-168 [29]. S.B. Felch, et al., “fluorine Effects in BF2+ implants at Various Energies”, Ion Implantation Tech. Proceed. Of the 11th Int. Conf., pp.611-614 (1997) [30].V. Krishnamoorthy, et al., “Energy Dependence of Transient-enhanced-diffusion in Low energy High Dose Arsenic Implants in Silicon”, Ion Implantation Tech. Proceed. Of the 11th Int. Conf., pp.638-641 (1997) [31]. R. Raman, et al., “Effect of surface proximity on end-of-range loop dissolution in silicon”, Appl. Phys. Lett., 74, pp.1591-1593 (1999) [32]. Y. Kim, et al., “The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation”, J. Elec. Materials, 18, pp.143-150 (1989) [33]. C. Bonafos, et al., “Transient enhanced diffusion of boron in presence of end-of-range defects”, J. Appl. Phys., 82, pp.2855-2861(1997)
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