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研究生:邱威鳴
研究生(外文):Wei-Ming Chiu
論文名稱:銅在Cu-BTA保護層與N2O電漿作用下對HSQ介電層之擴散研究
論文名稱(外文):The Investigation of Copper Drift in HSQ Dielectric under the Cu-BTA passivation layer and N2O plasma treatment
指導教授:楊文祿張勁燕張勁燕引用關係
指導教授(外文):Wen-Luh YangChin-Yen Chang
學位類別:碩士
校院名稱:逢甲大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2000
畢業學年度:88
語文別:中文
中文關鍵詞:Cu-BTAN2O電漿處理HSQ
外文關鍵詞:Cu-BTAN2O plasma treatmentHSQ
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隨著元件的尺寸縮小,元件速度主要受限於金屬連線間傳送之時間延遲,為了要降低導線的RC時間延遲,銅製程以及低介電常數材料的運用整合是目前最佳的選擇,然而,在銅和low-k的整合上仍有問題存在。本篇論文主要是分別提出以Cu-BTA保護層和N2O電漿處理以抑制銅擴散,並探討銅在Hydrogen silsesquioxance (HSQ)低介電層中的擴散情形。
本論文共分成兩部分:
第一部份研究銅在Cu-BTA保護層作用下對TEOS介電層之擴散。
第二部份研究銅在N2O電漿處理作用下對HSQ低介電層之擴散。
結論發現Cu-BTA保護層似乎不能有效抑制銅擴散,仍須使用有效的阻障層來抑制銅擴散;而經過N2O電漿處理後,介電常數有些為增加,漏電流有明顯下降趨勢。

Inetrconnect delay is a performance-liming factor for ULSI circuits when feature size is scaled into the deep sub-micron region. Low dielectric constant material integration with copper is an effective way to solve the RC-delay. However, integrating low dielectric constant material with copper still raises some challenges. This thesis mainly studies copper drift in HSQ dielectric under the Cu-BTA passivation layer and N2O plasma treatment.
This thesis consists for two parts.
In the first part, we study copper drift in TEOS dielectric under the Cu-BTA passivation layer.
In the second part, we study copper drift in HSQ dielectric under the N2O plasma treatment.
The conclusion of this thesis is that the Cu-BTA passivation layer can’t resist Cu+ penetration effectively. Integrating low dielectric constant material with copper still need the effective barrier. After N2O plasma treatment, the dielectric constant of HSQ has little change. The leakage current density reduces obviously for the plasma treated HSQ film.

中文摘要…………………………………………………………… i
英文摘要…………………………………………………………… ii
誌謝………………………………………………………………… iii
圖目錄……………………………………………………………… v
表目錄……………………………………………………………… vi
第一章 緒論……………………………………………………… 1
1.1 研究背景與動機………………………………………… 1
1.2 論文組織及結構……………………………………… 7
第二章 Cu-BTA保護層效應……………………………………… 12
2.1 簡介…………………………………………………… 12
2.2 實驗方法……………………………………………… 12
2.2.1 實驗步驟……………………………………… 13
2.2.2 電性量測方法………………………………… 14
2.2.3 物性量測方面………………………………… 15
2.3 實驗結果與討論……………………………………… 17
2.4 結論………………………………………………………18
第三章 N2O電漿處理效應………………………………………33
3.1 簡介……………………………………………………… 33
3.2 實驗方法………………………………………………… 33
3.2.1 實驗步驟…………………………………… 33
3.2.2 電性量測方法………………………………… 34
3.2.3 物性量測方法………………………………… 35
3.3 實驗結果與討論…………………………………… 37
3.4 結論………………………………………………… 39
第四章 總結……………………………………………………… 53
參考文獻…………………………………………………………… 55
作者簡介…………………………………………………………… 58

[1] W. W. Lee and P. Ho, “Low Dielectric Constant Materials”, MRS Bulletin Vol.22, No.10, p19-p69, 1997.
[2] S. -P Jeng, R. Havemann and M. Chang, Mat. Res. Soc. Symp. Proc. 337,1994, p25.
[3] Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham, “Copper transport in thermal SiO2”, J. Electrochem. Soc., vol. 140, no.8, pp. 2427-2432, 1993.
[4] J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, “Diffusion of Metals in Silicon Dioxide”, J. Electrochem. Soc., Vol. 133, No. 6, June 1986.
[5] Gopal Raghavan, Chien Chiahg, Paul B. Anders, Sing-Mo Tzeng, Reynaldo Villasol, Gang Bai, Mark Bohr, David B. Fraser, “Diffusion of copper through dielectric films under bias temperature stress”, Thin Solid Films 262 (1995) 168-176.
[6] A. L. S. Loke, C. Ryu, C. P. Yue, J. S. H. Cho, and S.S. Wong, “Kinetics of copper drift in PECVD dielectrics,” IEEE Electron Device Lett, vol. 17, pp. 549-551, Dec. 1996.
[7] Alvin L. S. Loke, Jeffrey T. Wetzel, Paul H. Townsend, Tsuneaki Tanabe, Raymond N. Vrtis, Melvin P. Zussman, Devendra Kumar, Changsup Ryu, S. Simon Wong, “Kinetics of Copper Drift in Low-k Polymer Interlevel Dielectric”, IEEE Transaction on Electron Devices, Vol. 46, No. 11, p.2178-2187, November 1999.
[8] Park KC, Kim KB, “Effect of annealing of titanium nitride on the diffusion barrier property in Cu metallization”, J Electrochem Soc. 1995:68:6207.
[9] Holloway K, Fryer PM, Cabral C, Harper JME, Bailey PJ, Kelleher KH. “Tantalum as diffusion barrier between copper and silicon — failure mechanism and effect of nitrogen additions”, J Appl Phys 1992; 71:5433.
[10] Oku T, Kawakami E, Uekubo M, Takahiro K, Yamaguchi S, Murakami M. “ Diffusion barrier property of TaN between Si and Cu”, Appl Surf Sci 1996;99:265.
[11] J. C. Chuang, S. L. Tu, M. C. Chen, “Sputter-deposited Mo and reactively sputter-deposited Mo-N films as barrier layers against Cu diffusion”, Thin Solid Films 346(1999) 299-306.
[12] A. Courtot-Descharles, F. Pires, P. Paillet, J. L. Leray, “ Density function theory applied to the calculation of dielectric constant of low-k materials”, Microelectronic Reliability 39 (1999) 279-284.
[13] Ben Shieh, Krishna Saraswat, Mike Deal, Jim McVittie, “ Air gaps lowers k of interconnect dielectrics”, Solid State Technology, pp51-58, February 1999.
[14] Kow-Ming Chang, Ji-Yi Yang, and Lih-Woen Chen, “ A Novel Technology to From Air Gap for ULSI Application”, IEEE Electron Device Letters, vol. 20, No.4, April 1999.
[15] Shieh, B.P.; Bassman, L.C.; Kim, D. -K.; Saraswat, K.C.; Deal, M.D.; McVittie, J.P.; List, R.S.; Nag, S.; Ting, L. “ Integration and reliability issues for low capacitance air-gap interconnect structures”, Interconnect Technology Conference, 1998. Proceedings of the IEEE 1999 International , 1998 , Page(s): 125 -127
[16] Michael A. Fury, “CMP processing with low-k dielectric”, Solid State Technology, p. 87-96,July 1999.
[17] W. C. Chen, S. C. Liu, B. T. Dai, M. S. Tsai, “Chemical Mechanical Polishing of Low-dielectric-Constant Polymer: Hydrogen Silsesquioxane and Methyl Silsesquioxane”, Journal of The Electrochemical Society, 146 (8) 3004-3008 (1999).
[18] M. Grant Albrecht, Craig Blanchette, “Materials Issues with Thin Film Hydrogen Silsesquioxane Low K Dielectric”, J. Electrochem. Soc., Vol. 145, No. 11, p.4019-4025, November 1998.
[19] Ian Morey, Ashish Asthana, “Etch challenges of low-k dielectric”, Solid State Technology, p. 71-78,June 1999.
[20] D. Louis, C. Peyne, E. Lajoinie, B. Vallesi, D. Holmes, D. Maloney, S. Lee, “ Improved Post Etch Cleaning for low-k and copper integration for 0.18μm Technology”, Microelectronic Engineering 46 (1999) 307-310.
[21] W. W. Lee and P. S. Ho, “Low dielectric constant materials for ULSI Interlayer dielectric application”, MRS Bulletin, pp. 19-23, October 1997.
[22] Ed Korczynski, “Low-k dielectric costs for dual-damascene integration”, Solid State Technology, p. 43-51,May 1999.
[23] B. Zhao, D. Feiler, V. Ramanathan, Q. Z. Liu, M. Brongo, J. Wu, H. Zhang, “A Cu/Low-k Damascene Interconnect for High Performance and Low Cost Integrated Circuits”, 1998 Symposium on VLSI Technology Digest of Technical papers, P.28.
[24] Donald Pierce, James Educato, Viren Rand, Dennis Yost, “ Wafer Level Electromigration Applied to Advanced Copper/Low-k Dielectric Process Sequence Integration”, 98 IRW FINAL REPORT, p. 10-15.
[25] Volker Blaschke, Gennadi Bersuker, Ramachandran Muralidhar, Mark Breen, “Integration Aspects for Damascene Copper Interconnect in Low K Dielectric”, IITC 98, p. 154-156.
[26] Tetsuya Homma, “Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections”, Materials Science and Engineering, R23 (1998) 243-285.
[27] Kellerman, D.; Retherford, L.; Nabatian, D.; Bokalo, P.; Feng He; Barlow, F.; Elshabini, A.“ Characterization and processing of low dielectric constant thick film substrates for electronic packaging applications”, Advanced Packaging Materials, 1998. Proceedings. 1998 4th International Symposium on, 1998 , Page(s) 130 -133.
[28] Allada, S. “ Low k adhesion issues in Cu/low k integration”, Interconnect Technology, 1999. IEEE International Conference, 1999, Page(s): 161 —163.
[29] P. T. Liu, T. C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih, H. D. Huang, “The effect of plasma treatment for low dielectric constant hydrogen silsesquioxane(HSQ),” Thin Solid Films, 332 (1998) 345-350.

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