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研究生:林文斌
研究生(外文):Wen-Pin Lin
論文名稱:絕緣閘雙載子電晶體之設計模擬與分析
論文名稱(外文):Design and Analysis of Insulated Gate Bipolar Transistor
指導教授:黃榮生
指導教授(外文):Jung-Sheng Huang
學位類別:碩士
校院名稱:義守大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2000
畢業學年度:88
語文別:中文
論文頁數:87
中文關鍵詞:IGBTSPICE 模型
外文關鍵詞:IGBTSPICE Model
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絕緣閘雙極電晶體(IGBT)因其優異的特性,現今在大多數的電力電子電路上,已漸取代BJT而成為重要且常用的現代功率半導體元件。但其缺點就是在電流過大時,會引發寄生的閘流體導通,引起閘極失控(亦即閂鎖現象);另外當元件關閉時,在N-drift區的大量多餘少數載子需經再結合回復至平衡狀態,引起曳尾的問題,而減緩了元件的切換速度。但最嚴重的問題是IGBT至今尚無標準且準確之SPICE模型,以供電路設計使用。所以本篇論文的重點,首先將導出IGBT在室溫下之靜態及暫態之電流電壓的解析關係,以了解其物理意義,接著對IGBT元件內部的各項特性,依據物理特性萃取其參數以建立與傳統一維SPICE模型不同之精確的二維等效電路SPICE模型。論文中,我們也針對IGBT閂鎖及關閉速度緩慢的問題,提出了旁路IGBT及互補式IGBT結構設計,以及他們的2D SPICE 模擬結果。與實驗量測及MEDICI模擬結果比對,証實本論文之2D SPICE模型十分精確。

Insulated-Gate Bipolar Transistor(IGBT) has superior characteristics and has substituted power BJT as an important modern power semiconductor device. However, when the turn-on current reaches critical point, the parasitic thyristor will be triggered, and the gate control is lost (i.e. latch-up effects). When IGBT switches off, the large excess minority carriers in the N-drift region will recover to the equilibrium conditions through recombination, and this process causes tail-current problems, and the turn-off speed becomes very slow. But the most serious problem is that the standard and accurate SPICE models of IGBT have not been well established. Therefore, to design an integrated circuit with IGBT becomes very difficult. Thus in this thesis, an analytical model for the steady-state and transient behaviors of IGBT are presented first to extract SPICE parameters. Then the physics-based two-dimension IGBT SPICE models are implemented. The bypass IGBT and complemented IGBT structures are proposed to improve the latch-up and slow switching-off speed. The models for these structures have been established, and the SPICE simulation results are verified by comparison with experimental results and MEDICI simulation results.

第一章 序論1
1.1 IGBT元件設計之由來1
1.2 以往之研究成果3
1.2.1 解析解3
1.2.2 SPICE MODEL4
1.2.3數值模擬5
1.2.4IGBT之改善5
1.2.4.1 少數載子旁路與分路5
1.2.4.2元件單元結構的變化6
1.2.4.3 IGBT開關速度之研究6
1.3本論文之目的與架構7
第二章 IGBT之解析解15
2.1靜態分析15
2.1.1開啟穩態時之載子分佈15
2.1.2 IGBT正向導通特性18
2.1.3閂鎖電流20
2.2關閉暫態分析20
第三章IGBT之2D SPICE MODEL24
3.1靜態模型24
3.2大訊號模型26
3.3小訊號模型27
第四章 結果與討論36
4.1 MEDICI 簡介及目的36
4.2 靜態特性38
4.3 暫態特性38
4.4 IGBT之改善39
第五章 結論67
參考文獻68
附錄A71

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