臺灣博碩士論文加值系統

本論文中，我們主要是利用多角度多波長橢圓測試法(variable angle spectroscopic ellipsometry)(VASE)去探討砷化銦鎵氮(InGaAsN)的光學特性。我們有系統地分析應力(strained layer)結構的砷化銦鎵氮(In0.3Ga0.7As1-yNy)(0≦y≦0.009)與晶格匹配(lattice-matched)結構的砷化銦鎵氮(InxGa1-xAs1-yNy)(x=0.03，y=0.01)、(x=0.03，y=0.018)、(x=0.043，y=0.01)中氮(N)含量(y)與銦(In)含量(x)對折射率(refractive index) n值及吸收係數(extinction coefficient)k值的影響。從我們的實驗結果可發現當氮(N)含量(y)與銦(In)含量(x)增加時，砷化銦鎵氮(InGaAsN)的折射率(refractive index) n值會增加。另一方面也發現到增加砷化銦鎵氮(InxGa1-xAs1-yNy)的氮(N)含量(y)所得到的折射率值比增加同等銦(In)含量(x)所得到的折射率值還大。

In this thesis, we report the optical properties of the quaternary compound semiconductor, InxGa1-xAs1-yNy, with various indium and nitrogen contents. The refractive indices of InxGa1-xAs1-yNy epilayers were systematically studied by using variable angle spectroscopic ellipsometry (VASE) in the wavelength range of 400~700 nm. Analysis of the spectroscopic ellipsometry data indicated that the refractive index of InxGa1-xAs1-yNy increases in proportion to the indium and nitrogen contents. It is also found that the rate of increase of the refractive index in InxGa1-xAs1-yNy with increasing nitrogen content is much larger than that with increasing indium content.

目錄
中文摘要…………………………………………………………Ⅰ
英文摘要.............................................Ⅱ
致謝…………………………………………………………………Ⅲ
目錄…………………………………………………………………Ⅳ
圖目錄………………………………………………………………Ⅶ
表目錄……………………………………………………………ⅩⅢ
第一章 前言………………………………………………………1
1-1 研究動機…………………………………………………1
1-2 論文架構…………………………………………………3
第二章 橢圓測試法的基本原理…………………………………4
2-1 前言………………………………………………………4
2-2 結構模型…………………………………………………5
2-2-1 雙層結構模型……………………………………….5
2-2-2 單層結構模型……………………………………….8
第三章 實驗步驟與方法……………………………………….10
3-1試片的準備……………………………………………….10
3-1-1 砷化銦鎵氮(InGaAsN)……………………………..10
3-2 實驗設備…………………………………………………12
3-3 量測之流程………………………………………………12
第四章 模擬結果………………………………… ……………16
4-1 零層模型(zero-layer model)………… ………………16
4-1-1 零層模型(zero-layer model)回顧…… ………………16
4-1-2 零層模型(zero-layer model)推導方法之改進………21
4-2 找出多波長橢圓儀最佳的量測入射角度………………29
4-2-1 砷化鎵銦砷(InGaAsN)………………………………30
4-2-1-1模擬結構……………………… ………………30
第五章 實驗結果與討論…………………………………………45
5-1 光學常數推導之流程………………………… 45
5-2 砷化鎵(GaAs)的折射率…………………………………51
5-3 砷化銦鎵氮(In0.3Ga0.7As1-yNy)
應力結構(strained layer) ………………54
5-3-1 砷化銦鎵氮(In0.3Ga0.7As1-yNy)中氮含量(y)
和折射率之關係趨勢………… ……………………54
5-3-2 砷化銦鎵氮(In0.3Ga0.7As1-yNy)中氮含量(y)
和能隙之關係趨勢…………… ……………………71
5-4 與砷化鎵基板晶格匹配砷化銦鎵氮(InxGa1-xAs1-yNy)
結構…………………………… ……………………78
5-4-1 砷化銦鎵氮(InxGa1-xAs1-yNy)中氮含量(y)
和折射率之關係趨勢………… ……………………78
5-4-2 砷化銦鎵氮(InxGa1-xAs1-yNy)中銦含量(x)
和折射率之關係趨勢………… ……………………84
5-4-3 砷化銦鎵氮(InxGa1-xAs1-yNy)中銦含量(x)
和氮含量(y)對能隙之關係趨勢…………………...87
第六章 結論與未來展望…………………………………………89
參考文獻……………………………………………………………ⅩⅣ

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