臺灣博碩士論文加值系統

在本篇論文中,我們研究共有三個項目。第一個項目是利用六甲基矽氧烷 (HMDSO) 作成的底抗反射層。它可用於以KrF (波長248 nm)及ArF (波長193 nm)準分子雷射為曝光光源的微影術。適宜作為底抗反射層的HMDSO膜層是利用調整ECR-PECVD製程中氧氣與HMDSO的氣體流量比而製成的。加上抗反射層後，在矽晶片及鋁膜上量測到的反射率均可小於1 %。而擺動(swing)效應也可以得到明顯的改善。我們也研究了以HMDSO作成的多層的底抗反射層結構。它可以用於各種不同的高反射基材，且擁有比單層膜大的厚度控制誤差容忍度。同時這個多層的結構也有潛力作為在深紫外光區的寬波段抗反射層。
第二個項目是利用PECVD製程來製作適用於深紫外光波段衰減式相位偏移光罩(APSM)的氮化矽膜層。並詳細分析膜層的光學常數、能隙、材料組成、雷射照射穩定性、蝕刻選擇性與膜層附著性。我們並利用深紫外光微影術結合矽化製程的技術將半次微米圖樣轉換至光罩膜層上，以證實氮化矽膜層作為APSM材料的可行性。綜合上述，發現氮化矽膜層為適合用來建構248 nm 及193 nm波段使用的APSM膜層。我們也利用RF濺鍍的方式成長氮氧化矽膜層，以作為真空紫外光157 nm雷射波段的APSM膜層之用。並分析氮氧化矽膜層的光學常數、蝕刻選擇性、表面狀態與膜層附著性。結果發現氮氧化矽膜層很有潛力可作為157 nm波段的APSM膜層。
第三個項目是我們利用光學薄膜原理來模擬用於極紫外光微影術中的新式反射式APSM。發現只要控制覆蓋於鉬/矽多層膜之上的鍺膜層厚度，就可以符合反射式APSM的需求，不需加任何相位偏移膜層。

We demonstrate a hexamethyldisiloxane (HMDSO) based BARC layer for both KrF (248 nm wavelength) and ArF (193 nm wavelength) excimer laser lithography. The suitable HMDSO films for BARC layers are obtained by varying the gas-flow rate ratio of oxygen to HMDSO in ECR-PECVD process. The measured reflectance lower than 1 % on both Al / Si and silicon crystal substrates have been achieved. The swing effect is shown significantly reduced by adding the HMDSO-based BARC layer. We also demonstrate a HMDSO based multi-layer BARC can have large thickness control tolerances over various highly reflective substrates. The multi-layer structure also has great potential for broadband AR coating in deep ultraviolet (DUV) regimes.
Suitable SiNx films for constructing the attenuated phase shifting masks (APSM) to be operated in the DUV regime are obtained by a PECVD process. Characteristics of the films such as optical constants, optical band gaps, material compositions, irradiation stability, etching selectivity and adhesion strength are experimentally analyzed in details. Sub-quarter micron patterns on SiNx films are obtained by utilizing DUV lithography and silylation technique for the proof of pattern formation feasibility. These results indicate that the SiNx films thus fabricated can meet all the requirements for building such APSM’s working in the wavelengths of 248 and 193 nm. We also demonstrate that suitable silicon-oxynitride films for constructing the APSM’s to be operated in the vacuum UV (VUV) 157 nm excimer laser regime are obtained by a RF sputtering process. Characteristics of the films such as optical constants, etching selectivity, surface profiles, and adhesion strength are experimentally analyzed. These results indicate that the silicon-oxynitride films can have great potential for building such APSM’s working in the wavelength of 157 nm.
We have simulated the optical performance of a new reflective type APSM for extreme UV (EUV) lithography by utilizing a multilayer optical thin film theory. In a typical Mo/Si multilayer structure, we show that the requirement of a reflective APSM can be met simply by adjusting the thickness of the over-coated Ge layer. No additional phase shifting layer is needed.

Cover
中文摘要
Abstract
Contents
List of Tables
List of Figures
Chapter 1 Introduction
1.1 Background
1.2 Chapter Outlines
Chapter 2 Bottom Antireflective Coating Layers for Deep Ultraviolet Optical Lithography
2.1 Antireflective Coating Technique for Optical Lithography
2.2 HMDSO Film as Bottom Antireflective Coating Layer for Deep Ultraviolet Optical Lithography
2.3 Multi-Layer HMDSO Films as Bottom Antireflective Coating for Deep Ultraviolet Lithography
Chapter 3 Attenuated Phase Shifting Masks for both Deep and Vacuum Ultraviolet Optical Lithography
3.1 Concepts of Phase Shifting Mask Technology
3.2 Attenuated Phase Shifting Masks for Deep UV Lithography
3.3 Attenuated Phase Shifting Masks for Vacuum Lithography
Chapter 4 Simulation on a Reflection Type Attenuated Phase Shifting Mask for Extreme UV Lithography
4.1 Introduction
4.2 Reflection Type Attenuated Phase Shifting Mask
4.3 Simulation Results
4.4 Summary
Chapter 5 Conclusion
Reference

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