臺灣博碩士論文加值系統

本論文之目的為設計製作指針式與電容式微應變規量測TSMC 1P4M CMOS標準製程中各層薄膜的殘留應變值。以CMOS標準製程加以微機電系統的後製程技術，可將微機電產品原型快速的推上工廠的生產線，然而CMOS標準製程是針對電子電路而發展，對於殘留應力的影響較不重視，但微機電結構會因殘留應力的影響，迅速的表現在外型的改變和尺寸的誤差上。因此瞭解CMOS標準製程中各層薄膜的殘留應力便是一個重要的課題。
文中首先對於殘留應力的產生原因與現象進行討論，並設計符合CMOS標準製程下的微結構，再加以微機電製程技術製作懸浮的微應變規。最後並討論本實驗所遭遇的問題和製程結果。

The purpose of this dissertation is to design and fabricate the pointer-type and capacitance-type micro strain gauges that can measure residual strain of each layer thin films in TSMC 1P4M CMOS standard process. Adding post-process techniques of MEMS to CMOS standard process we can push archetypical productions of MEMS on the production line fast. However, the development of CMOS standard process directs the integrated circuit rather than the effect of residual stress. But the micromachined structures will be affected in shape deformation and deviation of size by residual stress. So it is an important study on residual stress of thin films in CMOS standard process.
In this paper we discuss the reasons and phenomena happened by the residual stress, first. Secondary, we design the micro structures conformed to CMOS standard process design rules, and fabricate the suspended micro strain gauges by using the post-process techniques of MEMS. Finally, we discuss the result of post-process and the problems encountered in our experiment.

第一章 緒論.......................................1
1.1 前言...........................................1
1.2 研究動機.......................................3
1.3 文獻回顧.......................................4
1.4 研究方法.......................................6
1.5 章節提要.......................................7
第二章 設計原理...................................8
2.1 殘留應力.......................................8
2.2 量測方式與原理................................10
2.2.1 指針式微應變規............................10
2.2.2 電容式微應變規............................12
2.3 複合層結構之推算..............................14
2.3.1 二氧化矽..................................14
2.3.2 多晶矽....................................16
2.3.3 氮化矽....................................18
2.4 晶片佈局......................................20
第三章 後製程....................................21
3.1 指針式微應變規後製程流程......................21
3.1.1 單層金屬層................................21
3.1.2 二氧化矽層................................22
3.1.3 多晶矽層..................................23
3.1.4 氮化矽層..................................24
3.2 指針式微應變規後製程流程......................25
3.2.1 單層金屬層................................25
3.2.2 二氧化矽層................................27
3.2.3 多晶矽層..................................29
3.2.4 氮化矽層..................................31
3.3 乾蝕刻........................................33
3.4 光阻塗佈......................................34
3.5 曝光及顯影....................................35
3.6 光罩製作......................................36
3.7 蒸鍍及掀舉金屬................................37
3.8 濕蝕刻........................................37
3.9 臨界點乾燥....................................38
第四章 實驗結果..................................40
4.1 指針式微應變規後製程結果.....................40
4.1.1 單層金屬層................................40
4.1.2 二氧化矽層................................40
4.1.3 氮化矽層..................................41
4.2 電容式微應變規後製程結果.....................42
4.2.1 單層金屬層................................42
4.2.2 支撐端問題................................42
4.3 後製程的修改.................................44
4.3.1 單層金屬層太薄問題........................44
4.3.2 支撐端問題................................45
4.4 修改後的製程結果..............................47
4.5 以介層窗插塞製作支撐端所發生的現象............49
4.6 臨界點乾燥所遭遇的問題........................50
第五章 結論......................................51
5.1 實驗結果討論.................................51
5.1.1 金屬層....................................51
5.1.2 二氧化矽層................................52
5.1.3 氮化矽層..................................52
5.2 未來展望.....................................53
參考文獻.............................................54
附錄.................................................56
附錄 A...............................................57
附錄 B...............................................61
附錄 C...............................................63

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