臺灣博碩士論文加值系統

和矽在絕緣層上的金氧半元件比較起來，因多晶矽薄膜電晶體主動層為多晶矽，故擁有許多不同於矽在絕緣層上的金氧半元件特性。其晶粒邊界擁有陷阱態，而陷阱態能捕獲移動載子，故從而建立空間電荷能障，我們欲利用低頻雜訊量測來瞭解多晶矽薄膜電晶體的特殊性質。
矽在絕緣層上的金氧半元件因其高驅動電流特性，為極佳未來應用元件之一。除此之外，亦擁有著像:陡峭的次臨界斜率，縮減的寄生電容，和縮減的短通道效應。我們欲經由實驗證明來解釋並研究漏電流對通道長度與寬度的依賴性，並且利用實驗來討論矽在絕緣層上的低頻雜訊特性。

Polysilcon TFT has many characteristics similar to SOI MOSFET
except the active silicon layer is polycrystalline. The grain boundary contains trapping states that are capable of trapping
mobible carriers and contributing to the creation of space-charge potential barriers. We will realize the special properities of p-Si TFTs by measuring noise.
SOI MOSFET is one of the best candidates for future VLSI applications due to its high drivability. Besides, there are many merits such as : its steep subthreshold slope, reduced parasitic capacitance and reduced short-channel effect.
We want to explain and study the channel length and width dependence of off-state leakage currents through the experimental verification, and then we will discuss the noise spectrum of SOI MOSFET's by noise measurement.

1 Introduction 1
2 Noise Measurement of Polysilicon Thin-film transistors 4
2.1 Introduction ........................................4
2.2 Operation of p-Si TFTs ..............................5
2.3 Noise Source.........................................9
2.4 Experimental Results ...............................11
2.5 Disscussion ........................................19
3 Silicon On Insulator MOSFETs 21
3.1 Introduction .......................................21
3.2 Fully-depleted SOIs ................................24
3.3 Partially-Depleted SOIs.............................25
4 Analysis of Off-State Leakage Current in LOGOS Isolated
Partially-Depleted SOI MOSFET's 31
4.1 Introduction........................................31
4.2 Device Physics of Thick Film SOI MOSFET's...........34
4.3 Experimental........................................38
4.6 Conclusion..........................................52
5 Noise Measurement od SOI MOSFET's 53
5.1 Introduction........................................53
5.2 Noise Source and Physics............................53
5.3 Experimental Results................................55
5.4 Discussion..........................................55
6. Conclusion 63
Bibliography 65

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