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研究生:陳盈吉
研究生(外文):Y. C. Chen
論文名稱:以金屬矽化物降低源/汲極片電阻之研究
論文名稱(外文):The study of silicide on reduction of sheet resistance
指導教授:謝家荊鳳德
指導教授(外文):I. J. HsiehAlbert Chin
學位類別:碩士
校院名稱:中華大學
系所名稱:電機工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
中文關鍵詞:Ni-silicide
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隨著製程能力的進步,積體電路元件的體積也隨之越來越小,而元件所需消耗的電量亦跟著變小,然而元件變小並沒有改變目前閘極、源極和汲極的接觸電阻的大小。當所提供的電壓變小而閘極與源極和汲極間的接觸電阻無法降低的話,所需消耗的電量也就無法降低,進而影響到元件的運作。
本論文即在討論利用金屬矽化物的低電阻特性來降低閘極與源極和汲極的接觸電阻。將矽化鎳與矽化鈷使用在閘極與源極和汲極,發覺金屬矽化物的阻值小了許多,所以應用在Si Wafer上能得到不錯的效果。因此我們利用蒸鍍的方式把鈷和鎳蒸鍍在Si上,再利用不同的溫度使之化合成金屬矽化物,經過量測發現,在不同的溫度下所形成的矽化物亦有不同的阻值,在其中某一點的溫度能得到最好的結果。
現今最熱門的產業莫過於通訊產業了,由於SiGe是混合訊號產品與通訊RF元件的重要製程,並可取代部分較為高價的GaAs製程,本篇論文把金屬矽化物使用在SiGe上面,研究並探討其中矽化物之特性。
The performance of MOSFET makes a lot of progress as the technology of ULSI driven to smaller and smaller scale. However, The interconnection limits the operation frequency due to its high resistance. How to improve the characteristics of interconnection is an important topic when we study the process of IC. Salicide is nowadays one of the most important module of IC front-end.
Co-silicide or Ni-silicide applied on the gate and drain/source are popular for their good electrical characteristics and resist of narrow line effect. In this thesis, the process condition and characteristics of these two silicides are studied. Co and Ni films are deposited on silicon wafer by high vacuum evaporator system. Subsequent RTA is applied for different temperature.
SiGe is currently the hottest material for its low cost, high mobility and compatible with Si process. However, the salicide on the SiGe substrate is hard to implement for its high resistivity. Co:SiGe and Ni:SiGe are fabricated and studied in the following discussion. The best result was obtained by Ni:SiGe with 500 degree C anneal which sheet resistance is below 5 ohms/square.
摘要……………………………………………………………..……i
誌謝詞……………………………………………………………..…iii
目錄…………………………………………………………….…….iv
圖片說明……………………………………………………..….……v
Chapter 1 INTRODUCTION……………………………………..1
Chapter 2 EXPERIMENTAL……………….……………………2
Chapter 3 RESULTS AND DISCUSSION………………………5
Chapter 4 CONCLUSIONS………………………………………8
REFERENCES………………………………………………………10
FIGURES………………………………………….…………………14
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