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[1] 通訊科技,第15 期, pp. 45, Mar. 2001 [2] Walters, P., Lau P., Buehring, K., Penney, J., Farley, C., McDade, P., and Weller, K.,“A low cost linear AlGaAss/GaAs HBT MMIC Power amplifier with active bias sensing for PCS applicatins,”IEEE GaAs IC Symp. Dig. , pp. 67-70, 1995. [3] N. H. Sheng, W. J. Ho, N. L. Wang, R. L. Pierson, P. M. Asbeck, and W. L. Edwards, “A 30 GHz Bandwidth AlGaAs-GaAs HBT Direct-Coupled Feedback Amplifier, ” IEEE Microwave and Guide Wave Letters, vol. 1, No. 8, pp. 208-210, Aug. 1991. [4] K. W. Kobayashi, D. K. Umemoto, R. Esfandiari, A. K. Oki, L. M. Pawlowicz, M. E. Hafizi, L. Tran, J. B. Camou, K. S. Stolt, D. C. Streit, and M. E. Kim, “ GaAs HBT MMIC Broadband Amplifiers from DC to 20 GHz, ” IEEE Microwave and Millimeter-Wave Monolithic Circuit Symp. Dig. , pp. 19-22, 1990. [5] C. T. Armijo and R. G. Meyer, “A new wide-band Darlington amplifier,”IEEE J. Solid-State Circuits, vol. SC-16, pp. 634, Dec. 1981. [6] 袁杰,高頻通信電路設計-主動網路,全華出版社,民國八十一 年九月。 [7] 袁杰,高頻電路分析與設計(二),全威圖書有限公司,民國八十 五年九月。 [8] Paul M. White, “Effect of Input Harmonic Termination on High Efficiency Class-B and Class-F Operation of PHEMT Devices,” IEEE MTT-S Dig. , pp. 1611-1614, 1998. [9] M. Maeda et. ai.,“Source Second Harmonic Control for High Efficiency Power Amplifiers,”IEEE Trans. MTT, vol. 43, pp. 2952-2958, 1995. [10] Nathan O. Sokal and Aland D. Sokal,“Class E-A New Class of High-Efficiency Tuned Single-Ended Switching Power Amplifiers,”IEEE Journal of Solid-State Circuits, vol. SC-10, pp. 168-176, Jun. 1975。 [11] Guillermo Gonzalez, Microwave Transistor Amplifiers - Analysis and Design2nd, Prentice Hall Inc., New Jersey, 1996. [12] Steve C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House, Mar. 1999. [13] C. Duvanaud, S. Dietsche, G. Pataut, and J. Obregon, “High-Efficiency Class F GaAs FET Amplifiers Operating with Very Low Bias Voltages for Use in Mobile Telephones at 1.75 GHz,”IEEE Microwave and Guide Wave Letters, Vol. 3, pp. 268-270, Aug. 1993. [14] Frederick H. Raab,“Class-F Power Amplifiers with Maximally Flat Waveforms,”IEEE Trans. On MTT, vol. 45, pp. 2007-2012, Nov. 1997. [15] Marian Kazimierczuk,“Effects of the Collector Current Fall Time on the Class E Tuned Power Amplifier, ” IEEE J. Solid-State Circuits, vol. SC-18, pp. 181-193, Apr. 1983. [16] 楊正任,八十七年度通訊科技教育改進計畫實習教材-高頻電 路設計進階, pp. 3-6。 [17] 陳關民,900MHz 射頻功率放大器模組之設計與製作,國立中央 大學電機工程研究所碩士論文,民國八十六年六月。 [18] S. C. Cripps,“A Theory for The Prediction of GaAs FET Load-Pull Power Contours,”IEEE MTT-S Dig. , vol. G-7, pp. 221-223, 1983. [19] “Power Contour Plots Using Linear simulators,”Microwave Journal, pp. 60-70, Jun. 1996. [20] Michael G. Adlerstein and Mark P. Zaitlin,“Power Contours for Microwave HBTs,”Microwave Journal, pp. 70-80, Mar. 1993. [21] John L. B. Walker, High-Power GaAs FET Amplifiers, Artech House, Jan. 1993. [22] Nathan O. Sokal and Frederick H. Raab,“Harmonic Output of Class-E RF Power Amplifiers and Load Coupling Network Design,”IEEE J. Solid-State Circuits, pp. 86-88, Feb. 1977. [23] Nathan O. Sokal,“Class E high-Efficiency Power Amplifiers from HF to Microwave,”IEEE MTT-S Dig., vol. WE4C-1, pp. 1109-1112, 1998. [24] Tirdad Sowlati, C. Andre T. Salama, John Sitch, Gord Rabjohn and David Smith,“Low Voltage, High Efficiency GaAs Class E Power Amplifiers for Wireless Transmitters,”IEEE J. Solid-State Circuits, vol. 30, pp. 1074-1080, Oct. 1995. [25] Frederick H. Raab,“Effects of Circuit Variations on the Class E Tuned Power Amplifier,” IEEE J. Solid-State Circuits, vol. SC-13, pp. 239-247, Apr. 1978. [26] Francisco Javier Ortega-González, Jose Luis Jimenez-Martin, Alberto Asensio-López, and Germán Torregrosa-Penalva, “ High-Efficiency Load-Pull Harmonic Controlled Class-E Power Amplifier,”IEEE Microwave and Guide wave Letters, vol. 8, pp. 348-350, Oct. 1998. [27] Marian K. Kazimierczuk, “Class E Tuned Power Amplifier with Nonsinusoidal Output Voltage, ” IEEE J. Solid-State Circuits, vol. SC-21, pp. 575-581, Aug. 1986. [28] Frederick H. Raab,“Idealized Operation of the Class E Tuned Power Amplifier,”IEEE Trans. On Circuits and Systems, vol. CAS-24, pp. 725-735, Dec. 1977. [29] Marian K. Kazimierczuk and Krzysztof Puczko,“Exact Analysis of Class E Tuned Power Amplifier at any Q and Switch Duty Cycle,”IEEE Trans. On Circuits and Systems, vol. CAS-34, pp. 149-159, Feb. 1987. [30] 林清風,“E 類射頻功率放大器研製”國立清華大學電子工程 研究所碩士論文, 民國八十九年六月。 [31] P.L.D. Abrie, Design of Impedance-Matching Networks for Radio-Frequency and Microwave Amplifiers, Artech House, Aug. 1985. [32] David Sutherland Peckham, “Impedance Matching for Dual Band Power Amplifier,”US Patent No. 6078794, Jun. 2000. [33] Sang-Ki Yun, Hai-Young Lee,“Parasitic Impedance Analysis of Double Bonding Wires for High-Frequency Integrated Circuit Packaging,”IEEE Microwave and Guide Wave Letters, vol. 5, No. 9, Sep. 1995. [34] Howard Patterson,“Analysis of Ground Bond Wire Arrays for RF ICs,”IEEE Radio Frequency Integrated Circuit Sym., vol. WE3F-4, pp. 237-240, 1997. [35] Atila Mertol,“Estimation of Aluminum and Gold Bond Wire Fusing Current and Fusing Time,”IEEE Trans. on Components, Packaging, and Manufacturing Technology, Part B, vol. 18, No. 1, pp. 210-214, Feb. 1995.
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