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研究生:郭震中
研究生(外文):Chen-Chung Kuo
論文名稱:矽基材上方形螺旋電感器分析、尺寸化與應用
論文名稱(外文):The Spiral Inductors Analysis、Scaling and Application On Silicon Substrate
指導教授:田慶誠田慶誠引用關係
指導教授(外文):Ching-Cheng Tien
學位類別:碩士
校院名稱:中華大學
系所名稱:電機工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
論文頁數:100
中文關鍵詞:螺旋電感器裸晶圓曲線逼近品質因素護衛環遮蔽面電壓控制振盪器相位雜訊
外文關鍵詞:Spiral InductorsOn-WaferCurve FittingQ FactorGuard RingPattern GroundVCOPhase Noise
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摘要
現代無線通訊系統要求輕、薄、短、小且低成本,為滿足這些需求,則須將現有的分散式系統架構整合於CMOS製程中且為單一晶片型式。為了能與數位製程相容,標準的CMOS製程是無法進行調整或後製程加工等變動,這將影響被動元件中之電感器特性,其中以電壓控制振盪器相位雜訊值最為明顯。
本論文將詳細分析矽基材上螺旋電感器損耗因素,並經由電磁軟體模擬、實際量測與迴歸分析法,建立電感器等效電路參數尺寸化方程式。接著,設計一電壓控制振盪器,並將上述方程式計算所得電感值與其他參數值置入其諧振電路中,觀察其相位雜訊、輸出功率、二次諧波、…等等,且與製程廠相比較。如此,可驗證電感器模型準確性,以及證明電感器置於矽基材上且應用於射頻頻段的可行性。

Abstract
The modern wireless communication system has put great demands on circuit designers for light、thin、short、smaller and low cost. One tool that has assisted designers in satisfying these requirements is the use of on-chip with standard CMOS processing. In order to be compatible with the digital processing technology, a standard CMOS process without tuning or post-processing steps must be used. This should affect characterized of spiral integrated inductors on silicon substrate, especially on the phase noise of the VCO circuit.
In this thesis, detail analysis loss effect of spiral inductors on silicon substrate. The EM simulations、experimental measurements and regression analysis of inductors which to establish scaling equation of the parameters. The VCO design with different inductors of the tank circuit, and compare to phase noise、output power、second harmonic、…etc. To examine clearly an accurately of the inductor model and demonstrates the feasibility of a standard CMOS RF transceiver.

目錄
中文摘要 ……………………………………………………………… Ⅰ
英文摘要 ……………………………………………………………… Ⅱ
誌 謝 ……………………………………………………………… Ⅲ
目 錄 ……………………………………………………………… IV
圖 目 錄 ……………………………………………………………… VII
表 目 錄 ……………………………………………………………… X
第一章 導論
1.1前言 ………………………………………………………… 1
1.2研究動機 …………………………………………………… 2
1.3論文架構 …………………………………………………… 4
第二章 方形螺旋電感器理論與模型
2.1導論 ………………………………………………………… 6
2.2方形螺旋電感器基本數學理論 …………………………… 6
2.3方形螺旋電感器等效電路模型與寄生效應 ……………… 12
2.4方形螺旋電感器損耗因素 ………………………………… 17
2.5方形螺旋電感器品質因素 ………………………………… 22
2.6結論 ………………………………………………………… 24
第三章 方形螺旋電感器模擬與量測
3.1導論 ………………………………………………………… 26
3.2電磁模擬與參數萃取 ……………………………………… 27
3.3裸晶圓去埋入與量測 ……………………………………… 33
3.4結論 ………………………………………………………… 40
第四章 曲線逼近
4.1導論 ………………………………………………………… 41
4.2等效電路模型與量測曲線最佳化 ………………………… 42
4.3曲線逼近概念 ……………………………………………… 45
4.4曲線逼近結果 ……………………………………………… 48
4.5結論 ………………………………………………………… 50
第五章 佈局最佳化與影響
5.1導論 ………………………………………………………… 51
5.2多層金屬線型 ……………………………………………… 52
5.3接地遮蔽面型 ……………………………………………… 57
5.4護衛環與佈局影響 ………………………………………… 62
5.5結論 ………………………………………………………… 67
第六章 電壓控制振盪器(VCO)設計
6.1導論 ………………………………………………………… 69
6.2負電阻式振盪器原理 ……………………………………… 70
6.3電感-電容(LC)電壓控制振盪器相位雜訊 ………………… 74
6.4負電阻式電感-電容(LC)電壓控制振盪器設計 …………… 78
6.5模擬結果 …………………………………………………… 83
6.6結論 ………………………………………………………… 88
第七章 總結 ………………………………………………………………… 89
附錄(一) ……………………………………………………………… 91
附錄(二) ……………………………………………………………… 92
附錄(三) ……………………………………………………………… 93
附錄(四) ……………………………………………………………… 94
參考文獻 ……………………………………………………………………… 95

[參考文獻]
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