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研究生:吳秀凡
研究生(外文):Wu Hsiu Fan
論文名稱:氮氣電漿對砷化鋁鎵/砷化鎵異質接面雙極性電晶體的影響
論文名稱(外文):The Effect Of Nitrogen Plasma Damage on AlGaAs/GaAs Heterojunction Biplor Transistors
指導教授:許健興許健興引用關係
指導教授(外文):Chien-Hsing Hsu
學位類別:碩士
校院名稱:逢甲大學
系所名稱:化學工程學系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
論文頁數:70
中文關鍵詞:氮氣電漿砷化鋁鎵/砷化鎵感應式耦合電漿系統
外文關鍵詞:nitrogen plasmaAlGaAs/GaAsinductively coupled plasma
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砷化鋁鎵/砷化鎵異質接面雙極性電晶體具有體積小、功率效益良好、高工作頻率、高操作溫度…等優點,因此適用於無線行動通訊系統。
本文是以氮氣感應式耦合電漿系統改變其RF power、ICP source power、製程操作壓力及曝射時間,分別對每個元件進行蝕刻,然後再分別對各個元件進行電流增益值與崩潰電壓的量測,探討蝕刻條件對元件電性造成的影響,找出最有利的蝕刻條件,來提昇元件的電性。由此我們發現20 N2 sccm、300 W ICP power、30 W RF power、5 mTorr、110V DC bias、20 seconds exposure time的製程是最具有開發價值的。

AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are broadly used in wireless and mobile telecommunication system. Since they have the advantages of small die size、high power density、high operating frequency and high operating temperature.
In this study, we used nitrogen inductively coupled plasma system (ICP) and changed its RF power、ICP source power、process operating pressure and exposure time. HBTs were exposed to various kinds of different conditions and then the device current gain and breakdown voltage were measured by HP4145(B). Every device got damage after exposing to the nitrogen plasma. We found that the best condition for the plasma treatment is 20 N2 sccm、300W ICP power、30W RF power、5 mTorr、110V DC bias、20 seconds exposure time.

中文摘要………………………………………………………………..I
Abstract...……………………………………………………………….II
目錄…………………………………………………………………....III
圖目錄…………………………………………………………………VI
表目錄……………………………………………………………….…IX
第一章緒論…………………………………………………………..1
第二章電漿蝕刻……………………………………………………..4
2-1 電漿原理……………………………………………………….4
2-2 蝕刻原理……………………………………………………….6
2-2.1 濕式蝕刻…………………………………………………..6
2-2.2 乾式蝕刻…………………………………………………..7
2-3 電漿蝕刻設備原理…………………………………………….9
2-3.1 活性離子蝕刻(RIE)……………………………………….9
2-3.2 電子迴旋共振系統(ECR)………………………………..11
2-3.3 感應式耦合電漿(ICP)…………………………………...14
2-4 影響ICP電漿蝕刻的參數…………………………………...16
2-4.1 操作壓力對ICP系統的影響……………………………16
2-4.2 反應氣體的種類…………………………………………18
2-4.2.1 Cl2系電漿蝕刻……………………………………....18
2-4.2.2 H2 系電漿蝕刻………………………………………19
第三章元件製作與實驗方法……………………………………….20
3-1 元件製作………………………………………………………20
3-1.1 製程及儀器……………………………………………….20
3-1.2 處理條件………………………………………………….23
3-2 實驗儀器及方法………………………………………………24
3-2.1 集極電流(IC)與基極電流(IB)的量測……………………..25
3-2.2 電流增益的量測…………………………………………..27
3-2.3 薄片電阻的量測…………………………………………..28
3-2.4 崩潰電壓的量測…………………………………………..29
第四章 結果與討論…………………………………………………..31
4-1 RF power的影響………………………………………………31
4-1.1 RF power對電流增益的影響…………………………….31
4-1.2 RF power對崩潰電壓的影響…………………………….37
4-2 ICP source power的影響……………………………………...37
4-2.1 ICP source power對電流增益的影響……………………37
4-2.2 ICP source power對崩潰電壓的影響……………………38
4-3 操作壓力的影響………………………………………………43
4-3.1 操作壓力對電流增益的影響…………………………….43
4-3.2 操作壓力對崩潰電壓的影響…………………………….44
4-4 曝射時間對電流增益及崩潰電壓的影響……………………49
4-5 元件製程條件對電阻的影響…………………………………52
4-5.1 射極電阻(emitter resistance)………………………..52
4-5.2 基極電阻(base resistance)………………………………..52
第五章 結論………………………………………………………….69
參考文獻……………………………………………………………….71

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