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研究生:陳彬
研究生(外文):Ti-Bin Chen
論文名稱:氮化鋁基板厚膜電阻於空氣中燒結之電性研究
論文名稱(外文):Resistivity of Thick-Film Resistors Sinterable in Air for Alumium Nitride
指導教授:陳立軒陳立軒引用關係林文寬林文寬引用關係
指導教授(外文):Lih-Shan ChemW.K. Lin
學位類別:碩士
校院名稱:義守大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
論文頁數:80
中文關鍵詞:氮化鋁厚膜電阻電阻溫度係數電阻
外文關鍵詞:AlNthick film resistorTCRresistance
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摘 要
現有之厚膜塗料大部分是針對氧化鋁基板所設計,因此應用在氮化鋁基板時,無法產生適當之接著,氮化鋁基板擁有極佳的散熱性(理論值為320W/mK),且其熱膨脹係數和矽相近,可滿足在輕薄短小、高精密度、高密度的封裝趨勢下的要求。但由於氮化鋁易與商用厚膜塗料組成中的氧化鉛、氧化鉍…等玻璃相反應,在昇溫過程中將氮化鋁氧化成氧化鋁,並釋放出氮氣,而在界面形成氣孔等缺陷,使厚膜塗料和氮化鋁基板的接著性降低、電阻值升高、電阻溫度係數也跟著升高。
本研究先在氮化鋁基板與厚膜塗料介面增加一層擴散障礙層,也就是在網印前,先在氮化鋁基板上長上一層氧化層,之後再印上各厚膜電阻膏,結果發現不同的電阻層需要不同厚度的氧化層,才可以得到較接近理想的電阻值。
再將電阻膏中添加氧化物顆粒(Al2O3和MnO2),以網版印刷的方式,將不同氧化物含量之電阻膏塗佈於氮化鋁基板上,探討在不同氧化物添加量的場合,電阻層於燒成後之氣孔分布、界面微結構和電阻特性。
低阻值電阻層於添加氧化物顆粒比重增加時,則電阻層結構呈現多孔狀結構(未緻密狀態),而電阻值也隨著氧化物顆粒比重的增加而增加。中、高阻值電阻層添加氧化物後,界面氣孔隨著添加氧化物的量增多而逐漸變小、消失,而電阻值也隨著氧化物顆粒比重的增加而減少。而電阻溫度係數隨著所加入不同的氧化物、持溫時間,而有不同之變化。

Abstract
Most of the thick film pastes are designed for aluminum oxide (Al2O3) substrate. When the thick film pasetes were applied on aluminum nitride (AlN) substrates, they were incompatible with AlN.AlN substrate,which has better thermal conductivity ( the theory value of 320W/mk) and the thermal expansion coefficient with silicon,it is very suitable for the application in high power electronics. Because of the interaction between AlN and the glass of the commercial thick film paste,the AlN is reduced to Al2O3 , which release nitrogen and form blisters in the interface. The blisters result in lower adhesion between thick film layer and AlN substrate and higher resistance value.
To solve the problem of blisters between the AlN substrates and thick film layers.First, a diffusion barrier layer was formed between AlN substrate and thick film layer.An oxidization layer was formed on the AlN substrate, and thick film resistor pastes were printed and fired.It was found that various resistance value resistors need different thickness of oxidization layer.
Second, by adding oxide particle in resistor paste, different oxide content added resistor pastes were printed on the AlN substrate.The observation on the microstructure of the interface were done.And,the electrical properties of the different amount of oxide added resistors were investigated.
When the amount of oxide particle in the low resistance value resistors increases, the structure of resistance layer present porous structure. The resistance value also increases as the amount of oxide particle increases. With the addition of oxides to the resistance layer of middle or high resistance value resistors, the blisters of interface gradually become disappear as the amount of adding oxide increases.The resistance values also decrease as the amount of oxide particle increases. TCR depends on the added amount of various oxide and the sintering conditions.

目 錄
中文摘要………………………………………………………………..Ⅰ
英文摘要………………………………………………………………..Ⅱ
致謝………………………………………………………………….... Ⅳ
目錄……………………………………………………………………..Ⅴ
圖表目錄………………………………………………………………..Ⅷ
第一章 緒論….….………………………….…………………………1
1-1 前言…………….……………………………………...1
1-2 研究動機及目的.……………..………..……………...1
第二章 前人相關研究..………………..…………………….………...4
2-1 厚膜電阻……………………………………………...4
2-1-1 厚膜電阻的導電機構………………………4
2-1-2 厚膜電阻的燒結…………………………....5
2-1-3 燒成氣氛及添加物的影響…………………6
2-1-4 電阻值和TCR的計算……………………..9
2-2 氮化鋁基板….………….…………………………...11
2-2-1 塗料改質…………………………………13
2-2-2 氮化鋁基板的表面氧化成氧化鋁.…...…14
第三章 實驗步驟及方法…...………………………………………...16
3-1 基板氧化………………..……………………………...16
3-2 塗料的改變及燒成…………………………………….18
3-2-1 塗料改質……………………………………….18
3-2-2 塗料塗佈及燒成……………………………….19
3-2-3 電阻圖案……………………………………...19
3-3 電性的量測和微結構的觀察……………………….…19
第四章 結果與討論……………………………………….………….21
4-1 電阻膏與燒結溫度、持溫時間之關係.……..……….21
4-1-1 低阻值 Shoei R-2110(10Ω/□)………….21
4-1-2 中阻值 Shoei R-2310(1KΩ/□)…………...26
4-1-3 高阻值 Shoei R-2410(10KΩ/□)………...27
4-2 氮化鋁基板氧化……………………………………….34
4-3 低阻值添加氧化物對界面微結構和電性的影響…….42
4-3-1 界面微結構……………...……………………42
4-3-2 添加氧化物對電性的影響…………………...45
4-3-3 添加氧化物對TCR的影響…………………..50
4-4 中阻值添加氧化物對界面微結構和電性的影響…….55
4-4-1 界面微結構……………...……………………55
4-4-2 添加氧化物對電性的影響…………………...59
4-4-3 添加氧化物對TCR的影響……….…………...59
4-5 高阻值添加氧化物對界面微結構和電性的影響……...67
4-5-1 界面微結構……………...……………..………67
4-5-2 添加氧化物對電性的影響……………..……...67
4-5-3 添加氧化物對TCR的影響……………..……..68
第五章結論……………………………………….………………….77
參考文獻……………………………………….……………………….79

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