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研究生:許庭瑋
研究生(外文):Hsu,Ting-wei
論文名稱:高介電材料鈦酸鈷應用在非揮發性記憶體之研究
論文名稱(外文):CoTiO3 High-k Dielectric for Nonvolatile Memory
指導教授:貢中元貢中元引用關係趙天生
學位類別:碩士
校院名稱:國立中興大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:中文
論文頁數:100
中文關鍵詞:高介電鈦酸鈷非揮發性記憶體
外文關鍵詞:High-kCoTiO3Nonvolatile
相關次數:
  • 被引用被引用:1
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本論文首次合成出可應用在非揮發性記憶體的高介電材料鈦酸鈷。而在有阻障層的結構中,鈦酸鈷的介電常數可高達40。鈦酸鈷薄膜的合成方式,是利用鈷與鈦的堆疊結構,分別在存氧的環境下以700、800、900 °C三種溫度氧化。我們發現以700、800°C兩種氧化溫度下有較低的漏電流特性以及高的崩潰電場。在本篇論文中,我們對薄膜中捕捉電子現象,以及漏電流特性有深入的分析。700、800°C兩種氧化溫度的鈦酸鈷薄膜,其電流傳導機制為空間電荷限制電流。但是氧化溫度900°C的鈦酸鈷薄膜,因為有Co2TiO4的產生,有著與前述不同的混合機制。
In this thesis, for the first time we have fabricated CoTiO3 high-k material as the interpoly dielectrics for nonvolatile memory application. We found that the dielectric constant with the barrier layer can be reached as high as 40. CoTiO3 thin film were thermally grown in oxygen ambient on the deposited Co and Ti stacked metal films in 700、800、900 °C respectively. It is found that samples with 700 and 800 °C oxidation show a good characteristic, including reasonable breakdown field and leakage. Charge trapping and conducting mechanism were studied in detail for this structure. It is found that the conducting mechanism is space charge limited current for 700、800 °C samples. But it shows mixed conducting mechanism for 900 °C. This is due to different phase, Co2TiO4 , which results in different conducting mechanism.
目 錄
摘要(中文)
摘要(英文)
致謝
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表目錄
第一章簡介
1.1背景
1.2動機
1.3鈦酸鈷晶體結構
1.4鈦酸鈷晶體合成方式
1.5論文組織及架構
第二章實驗步驟與量測
2.1 鈦酸鈷薄膜電容結構及製作
2.1.1複晶矽電極沈積與蝕刻
2.1.2 氮化矽阻障層沈積
2.1.3 鈦酸鈷薄膜形成
2.1.4 氮化鈦與背鍍電極電極之沈積
2.2量測儀器與方法
2.2.1薄膜物性量測
2.2.1.1 表面粗糙度分析
2.2.1.2 組成分析
2.2.1.3 厚度分析
2.2.1.3.1 光學薄膜測厚儀
2.2.1.3.2 穿透式電子顯微鏡
2.2.2 鈦酸鈷電容電性量測
2.2.2.1 電容電壓特性量測
2.2.2.2 電流電壓特性量測
第三章 鈦酸鈷薄膜電容物性與電性探討
3.1 鈦酸鈷薄膜電容物性分析
3.1.1 薄膜厚度分析
3.1.2 X-ray 繞射檢測分析
3.2 電容電壓特性分析
3.3 電流電壓特性分析
3.3.1 鈦酸鈷薄膜缺陷分析
3.3.2 電流電壓特性與量測溫度關係
第四章 鈦酸鈷薄膜鐵電性探討
4-1 介電、壓電、熱釋電與鐵電基本理論
4.2 鐵電特徵
4-3 極化理論
4.4 鈦酸鈷薄膜鐵電性探討
第五章 鈦酸鈷薄膜漏電流機制探討
5.1 電流傳導機制簡介
5.1.1蕭基發射
5.1.2普爾-法蘭克效應
5.1.3 空間電荷限制電流
5.2 鈦酸鈷薄膜電容漏電流機制探討
第六章 結論與未來工作
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[1-10]J. Lee“Ultra-Thin Gate Oxide and High-K Dielectric ”, IEEE EDS Series-Dielectric 2001 .
[1-11]The International Technology Roadmap for Semiconductor 1999 .
[1-12]Tung Ming Pan, Tan Fu Lei ,Tien Sheng Chao, Kau Lih Chang, Kuang Chien Hsieh“High Quality Ultrathin CoTiO3 High-κ Gate Dielectric”,Electrochemical and Solid-State Letters., p433 , 2000.
[1-13] 劉梅冬,許毓春, 華中理工大學出版社“ 壓電鐵電材料與器件”.
[1-14]Kittel, 7th., John Wiley & Sons , 1996, “Introduction to Solid State Physics ”Chapter 1 .
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[5-1]李雅明“固態電子學 ”Chapter 14
[5-2]Sze,“Physics of Semiconductor devices ”
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[5-4]C.A Mead.“Electron transport mechanism in thin insulating films,”,Phys. Rev., Vol.128,p2088,1962
[5-5]J.F.Scott,et.al,“Quantitative measurement of space-charge effects in lead zirconate-titanate memories”, J. Appl. Phys.,Vol2, p382-388,1991
[5-6] S.B. Krupanidhi ,D. Roy , “Effect of low dc plasma discharge on laser ablated ferroelectric Pb(Zr,Ti)O3” J. Appl. Phys,72(2), 1992
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[5-8] C-J. Peng and S.B. Krupanidhi“Structures and electrical properties of barium strontium titanate thin films”
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