臺灣博碩士論文加值系統

本研究首先利用光電倍增管和示波器量得準分子雷射的脈衝能量隨時間的分佈，並以發色基濃度的速率方程式，結合能量方程式以及輻射在介質中的傳遞和煙柱衰減效應的影響等，來預測準分子雷射對PMMA的刻除率，並同時求得臨界能量密度，以做為將來加工時所需最低能量的參考。此預測的刻除率將和實驗所得的刻除率比較。基於這些結果，本文探討光束大小、空氣噴流、能量密度等加工參數對多分子材料刻除率的影響。

In this work, we use photomultiplier and oscilloscope to measure temporal distribution of the pulse energy of the excimer laser. Then, we combine the rate equation of the concentration of chromophores, the energy equation, the transfer of radiation in material and the plume attenuation effects to predict the etching rate of PMMA by excimer laser. The predicted results are compared with the measurement results. Based on those results, the effects of machining parameters, including beam size, purge air and energy fluence, on the etching rate of polymers are studied.

目錄
中文摘要…………………………………………………………………….Ⅰ
英文摘要…………………………………………………………………….Ⅱ
誌謝………………………………………………………………………….Ⅲ
目錄………………………………………………………………………….Ⅳ
表目錄…………………………………………………………………….…Ⅵ
圖目錄……………………………………………………………………….Ⅶ
符號說明……………………………………………………………………Ⅹ
第一章緒論………………………………………………………………..1
第二章實驗量測………………………………………………………….4
2-1 雷射脈衝能量的量測…………………………………………….4
2-2 刻除率的量測…………………………………………………….6
2-3 煙柱衰減率的量測……………………………………………….7
第三章預測模式與數值方法……………………………………………10
3-1 預測模式………………………………………………………..10
3-2 數值方法………………………………………………………..17
第四章結果與討論……………………………………………………….21
4-1 已知未經煙柱衰減光子通量的結果與討論……………………21
4-2 已知經煙柱衰減後的光子通量的結果與討論…………………24
第五章結論與展望………………………………..……………………..26
5-1 結論………………………………………………………………26
5-2 展望………………………………………………………………26
參考文獻……………………………………………………………………28
自述…………………………………………………………………………71
表目錄
表4-1PMMA的吸收係數………………………………………………48
表4-2計算用的物理及化學性質[28]…………………………….…….49
圖目錄
圖2-1PS-2000型KrF Excimer Laser的整體構造圖………………….35
圖2-2PS-2000型KrF Excimer Laser的整體示意圖………………….36
圖2-3雷射脈衝能量量測的實驗裝置示意圖……………..………….37
圖2-4在15倍鏡和5倍鏡下能量計所量得的不同能量密度對衰減器角度的關係圖……………………………………..……………….38
圖2-5未經轉換的〝電壓-時間〞的脈衝能量圖型……………………39
圖2-6經過轉換後的〝光子通量-時間〞的脈衝能量圖型……….….40
圖2-7煙柱衰減率量測的實驗裝置示意圖…………………………….41
圖3-1二能階系統輻射過程……………………………………………42
圖3-2三能階系統輻射過程………………….………………………..43
圖3-3座標示意圖………………………………………………………44
圖3-4崩壞材料擴散模式中使用的幾何參數（右半）；崩壞材料對入射光束的影響示意圖（左半）…………………………………….45
圖3-5(a)程式計算流程圖………………………………………………….46
圖3-5(b)程式計算流程圖…………………………………………….……47
圖4-1在不同的雷射能量密度下，照射在材料固體表面無因次的光子通量的時間分佈圖（tp=30 ns）……………………………….…50
圖4-2雷射光點半徑為50 μm、75 μm、145 μm、188 μm、200 μm時 刻除率的理論預測結果，符號點為10個脈衝的實驗結果的平均值，線段部分為為理論預測結果……………………………….51
圖4-3雷射光點大小為50μm時，不同大小空間格點的比較………52
圖4-4 雷射光點大小為50μm時，不同大小時間格點的比較………53
圖4-5 在不同的雷射能量密度下，刻除深度隨時間變化的關係圖….54
圖4-6 在不同的雷射能量密度下，材料表面溫度的時間分佈圖…….55
圖4-7 在不同的雷射能量密度下，材料在脈衝結束時位於基態無因次的發色基濃度的空間分佈圖…………………………………….56
圖4-8 在不同的雷射能量密度下，材料在脈衝結束時位於激發態無因次的發色基濃度的空間分佈圖………………………………….57
圖4-9在不同的雷射能量密度下，z方向脈衝結束時無因次的材料溫度的空間分佈圖…………………………………………………….58
圖4-10在有空氣噴流的情況下，孔徑與空氣噴流對刻除深度的影響，符號點為10個脈衝的實驗結果的平均值，線段部分為曲線擬合的結果…………………………………………………………….59
圖4-11在無空氣噴流的情況下，孔徑與空氣噴流對刻除深度的影響，符號點為10個脈衝的實驗結果的平均值，線段部分為曲線擬合的結果…………………………………………………………….60
圖4-12在相同雷射光點大小下，有空氣噴流和無空氣噴流對刻除深度的影響…………………………………………………………….61
圖4-13當入射的雷射光能量密度小於臨界能量密度Fth時，所造成的孵化現象……………………….……………………………………62
圖4-14雷射光點大小在50μm、75μm、145μm、188μm、200μm於不同能量密度下所量得的刻除深度結果…………………………….63
圖4-15在不同的雷射能量密度下，照射在材料固體表面無因次的光子通量的時間分佈圖……………………………………………….64
圖4-16實驗值和預測值在不同能量密度下刻除率的比較，符號部份為實驗值和預測值，而線段部份為曲線擬合的結果…………….65
圖4-17在不同的雷射能量密度下，刻除深度隨時間變化的關係圖….66
圖4-18在不同的雷射能量密度下，材料表面溫度的時間分佈圖…….67
圖4-19在不同的雷射能量密度下，材料在脈衝結束時位於基態無因次的發色基濃度的空間分佈圖…………………………………….68
圖4-20在不同的雷射能量密度下，材料在脈衝結束時位於激發態無因次的發色基濃度的空間分佈圖………………………………….69
圖4-21在不同的雷射能量密度下，z方向脈衝結束時無因次的材料溫度的空間分佈圖…………………………………………………….70

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