臺灣博碩士論文加值系統

本實驗以有機化學氣相沉積法(MOCVD)鍍製Ta2O5介電薄膜於TaN/Ta、Ru、Pt/TiN/Ti/SiO2、PtO/Pt/TiN/Ti/SiO2四種基板，探討不同電漿熱處理溫度對其結晶結構、微觀結構、電容介電特性等方面的研究。在研究Ta2O5/TaN/Ta結構時，利用N2O，10W，450℃電漿退火15min來去除Ta2O5薄膜中的碳、氫等雜質，可使漏電流特性有所改善，在1V的工作電壓可以使c-Ta2O5（25nm）/TaN/Ta的漏電流降至6.5×10-8A/cm2，但卻使得TaN電極被氧化成TaON使得介電常數大幅下降。
利用Ru底電極可以得到結晶的Ta2O5有(001)的優選結晶方向而提高其介電常數值達62。利用PtO電極具有粗糙表面的半球型突起結構，有效的增加其表面積而提高電容值，相當於介電常數有35∼40之間，其表面積增為原來的1.56倍。Pt也會因表面些微的小突起而增加面積約1.12倍。不管是以Ru、Pt、PtO為底電極，N2O電漿熱處理的溫度越高，均會造成底電極本身的粗糙度增加，而使得漏電流因尖端放電而過大，因此，必須在較低的溫度做去除薄膜中碳氫的工作。而Ru底電極在450℃電漿熱處理會形成RuO2而使得表面更粗糙。所以當熱處理溫度在300℃，10W，15min時，W/c-Ta2O5（30nm）/Ru，在0.5MV/cm，漏電流約8.9×10-8A/cm，介電常數為56。若以非結晶Ta2O5來比較在不同電極上的漏電流特性，W/a-Ta2O5（35nm）/Ru，在0.5MV/cm，漏電流約6.3×10-10A/cm，介電常數為27.7；W/a-Ta2O5（42nm）/Pt在0.5MV/cm時，J=5.3×10-9 MV/cm，介電常數為27.8；W/a-Ta2O5（42nm）/PtO則漏電流較大，在0.5MV/cm時，J=6.7×10-6 MV/cm，介電常數為35。

目 錄
摘要
誌謝
表目錄---------------------------------------------------------------iv
圖目錄---------------------------------------------------------------v
第一章緒論---------------------------------------------------------1
[1]1-1 研究背景-----------------------------------------------------------------1
1-2 研究動機-----------------------------------------------------------------2
1-3 研究目標-----------------------------------------------------------------4
第二章文獻回顧---------------------------------------------------8
2-1 Ta2O5薄膜-----------------------------------------------------------------8
2-2 Ta2O5結構-----------------------------------------------------------------8
2-3 Ta2O5薄膜製作方法-----------------------------------------------------9
2-4 化學氣相沉積法---------------------------------------------------------10
2-4.1簡介--------------------------------------------------------------------10
2-4.2CVD原理-------------------------------------------------------------10
2-5 Ta2O5薄膜特性之改善--------------------------------------------------13
2-5.1提高電容值-----------------------------------------------------------13
2-5.2漏電流的降低--------------------------------------------------------15
2-6下電極的選擇-------------------------------------------------------------17
2-6.1TaN電極--------------------------------------------------------------18
2-6.2Ru電極----------------------------------------------------------------19
2-6.3Pt 電極----------------------------------------------------------------20
2-6.4白金氧化物(PtOx)電極----------------------------------------------21
第三章實驗步驟---------------------------------------------------26
3-1 薄膜電容的製作---------------------------------------------------------26
3-1.1 底電極製作-----------------------------------------------------------26
3-1.2介電薄膜沈積--------------------------------------------------------27
3-1.3Ta2O5介電薄膜熱處理---------------------------------------------28
3-1.4上電極製作-----------------------------------------------------------29
3-3 薄膜的量測與分析------------------------------------------------------29
3-3.1晶體結構分析--------------------------------------------------------29
3-3.2膜厚量測--------------------------------------------------------------29
3-3.3微觀結構--------------------------------------------------------------30
3-3.4縱深分析--------------------------------------------------------------30
3-3.5介電常數與散逸因子量測-----------------------------------------30
3-3.6電流-電壓量測-------------------------------------------------------30
第四章結果與討論------------------------------------------------37
4-1 TaN/Ta底電極對W/Ta2O5/TaN/Ta電容結構之性質探討-----------------------------------------------------------------------37
4-1.1晶體結構分析--------------------------------------------------------37
4-1.2微觀結構分析--------------------------------------------------------38
4-1.3縱深分析--------------------------------------------------------------38
4-1.4介電常數與散逸因子-----------------------------------------------39
4-1.5漏電流探討-----------------------------------------------------------42
4-2 以Ru、Pt、PtO為底電極之Ta2O5電容特性之探討 -----------44
4-2.1晶體結構分析--------------------------------------------------------44
4-2.2縱深分析--------------------------------------------------------------45
4-2.3介電常數分析--------------------------------------------------------46
4-2.4微觀結構分析--------------------------------------------------------48
4-2.5比較Ta2O5在Ru、Pt、PtO三種電極之漏電流特性----------50
第五章結論---------------------------------------------------------81
參考文獻-------------------------------------------------------------83
表 目 錄
表1-11999年的全球十大DRAM廠商------------------------------------6
表1-2前十大 DRAM需求的系統種類------------------------------------7
表1-3每部系統所需DRAM平均用量-------------------------------------7
表1-4幾種典型之高介電薄膜材料----------------------------------------7
表3-1底電極TaN/Ta之鍍膜條件-------------------------------------------33
表3-2底電極Ru之鍍膜條件------------------------------------------------33
表3-3底電極PtO/Pt之鍍膜條件--------------------------------------------34
表3-4底電極Pt之鍍膜條件-------------------------------------------------34
表3-5鉭先趨物之基本特性-------------------------------------------------35
表3-6(Ta2O5)薄膜之製程參數( Bubbling 系統) ------------------------35
表3-7上電極 W 鍍膜條件-------------------------------------------------36
表4-1c-Ta2O5（25nm）/TaN/Ta，經過RTO以後生成的TaON的厚度，RTO溫度與測得的串聯電容值C，串聯的介電常數以兩層厚度和計算之k值-------------------------------------------------53
表4-2c-Ta2O5(25nm)/TaN/Ta之電漿熱處理溫度與TaON生成的厚度計算，以及考慮TaON層在內的介電常數---------------------53
表4-3a-Ta2O5(28nm)/TaN/Ta之電漿熱處理溫度與TaON生成的厚度計算，以及考慮TaON層在內的介電常數--------------------54
圖 目 錄
圖1-1DRAM產品世代交替趨勢-------------------------------------------3
圖1-2DRAM記憶胞的(a)截面構造與(b)電路---------------------------3
圖1-3DRAM電容結構的發展演進----------------------------------------4
圖2-1Ta-O的相圖------------------------------------------------------------23
圖2-2Ta2O5斜方晶結構在(001)面的投影示意圖------------------------23
圖2-3Ta2O5六方晶的結構示意圖------------------------------------------24
圖2-4化學氣相沉積的五個主要機構--------------------------------------24
圖2-5成長半球型晶粒矽之示意圖----------------------------------------25
圖2-6不同氧流量比例與基板溫度與PtOx相形成的關係-------------25
圖3-1流程圖-------------------------------------------------------------------31
圖3-2(Ta2O5)薄膜之LPCVD製程設備圖---------------------------------32
圖4-1Ta2O5結晶化熱處理前後，與Ta2O5結晶之後在不同溫度下10W，15min N2O電漿補氧熱處理之XRD圖-------------------55
圖4-2Ta2O5結晶化熱處理前後，與Ta2O5結晶之後在不同溫度下氧氣氛快速退火(RTO)補氧熱處理之XRD圖-----------------------55
圖4-3Ta2O5/TaN/Ta經750℃RTN熱處理之後，表面微觀結構的SEM照片(A) ×50K (B)×100K-------------------------------------56
圖4-4 TaN/Ta電極之AFM (A) Roughness (B) 3D表面型態圖分析--56
圖4-5Ta2O5/TaN/Ta經750℃-RTN之AFM (A) Roughness (B) 3D表面型態分析----------------------------------------------------------57
圖4-6Ta2O5(25nm)/TaN/Ta經過750℃，30sec的氮氣氛快速退火熱 處理(RTN)的歐傑電子縱深分析-----------------------------------58
圖4-7為Ta2O5(25nm)/TaN/Ta/Si，經過結晶化RTN 750℃以後再以N2O氣氛於450℃，10W，15min電漿退火熱處理的歐傑電子縱深分析-------------------------------------------------------------58
圖4-8Ta2O5(25nm)/TaN/Ta經過750℃-30sec-RTN後，再以氧氣氛快速退火熱處理2分鐘(RTO)，之介電常數與散逸因子和RTO溫度的關係-------------------------------------------------------------59
圖4-9結晶的Ta2O5（25nm）/TaN/Ta在不同N2O電漿熱處理溫度下對量測到的介電常數以及散逸因子的影響--------------------59
圖4-10 結晶的Ta2O5在400℃，N2O 電漿熱處理後量測並計算其氧化厚(dTaON)對時間(t)之ln(dTaON)－ln(t)關係圖-------------------60
圖4-11非結晶的Ta2O5在400℃，N2O 電漿熱處理後量測並計算其氧化厚(dTaON)對時間(t)之ln(dTaON)－ln(t)關係圖形-------------60
圖4-12Ta2O5(15nm)/TaN/Ta在不同瓦數下350℃-N2O電漿熱處理15分鐘後之介電常數與散逸因子的影響-----------------------------61
圖4-13Ta2O5(15nm)/TaN/Ta在350℃-10W-O2電漿熱處理不同時間後之介電常數與散逸因子的影響-----------------------------------61
圖4-14比較350℃-O2氣氛快速熱處理(RTO) 2分鐘與350℃- N2O-15min電漿熱處理的漏電流特性(A)均以固定厚度25nm計算電場(B)考慮TaON的厚度換算電場--------------------------------62
圖4-15結晶的Ta2O5/TaN/Ta在300℃∼450℃，N2O電漿熱處理15min之漏電流特性( J-V) -------------------------------------------------------63
圖4-16非結晶的Ta2O5/TaN/Ta在300℃∼450℃，N2O電漿熱理15min之漏電流特性(J-V) --------------------------------------------------------63
圖4-17結晶的Ta2O5+TaON/TaN/Ta之在300℃∼450℃，N2O電漿熱處理15min漏電流密度與電場的關係（J-E）--------------------------64
圖4-18結晶的Ta2O5+TaON/TaN/Ta在300℃∼450℃，N2O電漿熱處理15min之漏電流密度與電場的關係（J-E）-------------------64
圖4-19正、負偏壓各以TaON、Ta2O5本身各自承受的電場之W/c-Ta2O5/TaN/Ta電容結構在300℃∼450℃，N2O電漿熱處理15min漏電流密度與電場的關係（J-E）----------------------65
圖4-20(a)-(c)以Ru為底電極之結晶的Ta2O5在300℃∼450℃-N2O電漿熱處理15min後的晶體結構分析(XRD) (d) Ta2O5在Ru與RuO2/Ru之結晶特性分析(XRD) --------------------------------65
圖4-21以 Pt/TiN/Ti/SiO2為底電極之結晶的Ta2O5在300℃∼450℃-N2O電漿熱處理15min後的晶體結構分析(XRD)--------------67
圖4-22以 PtO/Pt/TiN/Ti/SiO2為底電極之結晶的Ta2O5在300℃∼450℃-N2O電漿熱處理15min後的晶體結構分析(XRD)------ 67
圖4-23Ta2O5/Pt/TiN/Ti/SiO2 經過750℃ RTN 30 sec 之後做歐傑電子縱深分析------------------------------------------------------------- 68
圖4-24Ta2O5/PtO/Pt/TiN/Ti/SiO2 經過750℃ RTN 30 sec 之後做歐傑電子縱深分析------------------------------------------------------- 68
圖4-25非結晶Ta2O5/Ru經過450℃電漿熱處理之歐傑電子縱深分析69
圖4-26(a) 結晶 (b)非結晶 Ta2O5/Ru介電常數與散逸因子隨電漿熱處理溫度的關係---------------------------------------------------- 70
圖4-27(a) 結晶 (b)非結晶 Ta2O5/PtO/Pt/TiN/Ti/SiO2介電常數與散逸因子隨電漿熱處理溫度的關係----------------------------------- 71
圖4-28非結晶的Ta2O5/Pt介電常數與散逸因子隨電漿熱處理溫度的 關係---------------------------------------------------------------------- 72
圖4-29(a) 非結晶Ta2O5在PtO電極上的介電常數與散逸因子隨頻率變化的關係----------------------------------------------------------------- 72
圖4-29(b) 結晶的Ta2O5在PtO電極上的介電常數與散逸因子隨頻率變化的關係---------------------------------------------------------- 73
圖4-30 比較非結晶的Ta2O5在TaN、Ru、Pt、PtO四種電極介電 常數與散逸因子的變化---------------------------------------------- 73
圖4-31 非結晶Ta2O5/Ru之SEM (a) 截面(×100k) (b) 表面(×100k)---74
圖4-32非結晶Ta2O5/Pt/TiN/Ti/SiO2之SEM (a) 截面 (×150k) (b) 表面(×100k) -------------------------------------------------------------- 74
圖4-33非結晶Ta2O5/PtO/Pt/TiN/Ti/SiO2之SEM (a) 截面 (×150k) (b) 表面(×100k) ------------------------------------------------------ 74
圖4-34非結晶的Ta2O5/PtO/Pt/TiN/Ti/SiO2之AFM表面型態---------75
圖4-35非結晶的Ta2O5/Pt/TiN/Ti/SiO之AFM表面型態---------------75
圖4-36非結晶的Ta2O5/Ru之AFM表面型態-----------------------------76
圖4-37PtO/Pt/TiN/Ti/SiO2之AFM表面型態-----------------------------76
圖4-38Pt/TiN/Ti/SiO2之AFM表面型態----------------------------------76
圖4-39結晶的Ta2O5/PtO/Pt/TiN/Ti/SiO2之AFM表面型態------------77
圖4-40結晶的Ta2O5/Pt/TiN/Ti/SiO之AFM表面型態------------------77
圖4-41結晶的Ta2O5/Ru之AFM表面型態------------------------------78
圖4-42(a)非結晶 (b)結晶的Ta2O5/Ru在300℃∼450℃ N2O電漿熱處理 10W-15min，之漏電流特性(J-E) -------------------------79
圖4-43非結晶的Ta2O5/Pt在300℃∼450℃N2O電漿熱處理之漏電流特性( J-E) --------------------------------------------------------------80
圖4-44非結晶的Ta2O5/PtO在300℃∼450℃N2O電漿熱處理之漏電流特性（J-E）----------------------------------------------------------------- 80

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