臺灣博碩士論文加值系統

摘要
雪崩型檢光二極體由於具有內部增益，使其在偵測光源上有較高的靈敏度，因此特別適合在長距離的光纖通訊或需要高靈敏度的系統上當作檢光器。
雪崩型檢光二極體操作在崩潰電壓附近，當使用平面擴散形成pn介面時，由於接面曲面效應的緣故，導致擴散接面形成球形曲面，因此造成擴散邊緣曲面比擴散中心曲面提早發生崩潰，這在檢光器中常會遇到的問題，因此必須加入額外的製程以減少這問題的產生。
在本文中，我們在元件中加入一層電荷層，藉由乾蝕刻技術使其成為mesa形狀，再經由MOCVD二次磊晶成長累增層，進而改變內部電場的分佈，抑制了邊緣崩潰，我們成功做出五批元件，為平面型InGaAs/InP雪崩型檢光二極體除了護環結構(guard ring)外，提供另一種可行性的之製作方式，在我們的量測結果中，在0.95崩潰電壓時，其暗電流為4.28nA以下，增益為10左右，又其在增益為5時，3dB頻寬為4.9GHz。元件的操作電壓稍嫌高了些，未來我們可以增加平台層和電荷層的摻雜濃度，以便改變電場的分佈，而得到有較低操作電壓的雪崩型檢光二極體，方便於實際上的運用，我們也可以減少二次磊晶的厚度，進一步減少傳輸時間，使得元件有更高的操作頻率。最近有論文提出共振腔式結構(resonant-cavity)的雪崩型檢光二極體，使得其增益頻寬乘積到達290 GHz[13][14]，也有許多研究著重在超晶格上的運用[15]，加強電子電洞游離係數的差異，以解決Ⅲ-Ⅴ族半導體化合物先天上α和β差異不大的特性，而得到低雜訊的雪崩型檢光二極體，這都是我們未來注意研究的方向。

Abstract
An avalanche photodiode with internal gain made it have higher sensitivity in communication receiver. Therefore, It is suitable as photodetectors in long distance fiber communication or high sensitivity system.
An avalanche photodiode with pn junction using planar diffusion process operated near the breakdown voltage. Because of the junction curvature effect, this will make the edge breakdown easily. This is a serious problem in photodetectors
In order to reduce the edge breakdown effect and tailor the distribution of the electric field intensity, we added a charge layer and then etched by dry etching technology to form a mesa structure and re-grown a multiplication layer by MOCVD. We successfully fabricated five structures without guard ring structures.
In conclusion, the dark current is about 4.28nA and the gain is around 10 at 0.95V breakdown voltage. The 3dB bandwidth is about 4.9GHz when the gain is 5.

目錄
論文摘要………………………………………………………………Ⅰ
誌謝……………………………………………………………………Ⅲ
目錄……………………………………………………………………Ⅳ
圖目錄…………………………………………………………………Ⅵ
第一章導論………………………………………………………1
第二章雪崩型檢光二極體之工作原理
2-1 工作原理……………………………………………3
2-2 累增增益……………………………………………4
2-3 暗電流機制…………………………………………5
2-4 電場分佈……………………………………………8
第三章元件設計與製程
3-1 元件結構……………………………………………11
3-2 元件製作……………………………………………15
第四章量測與分析
4-1 Chemical C-V profile……………………………21
4-2電流-電壓的量測……………………………………21
4-3電容-電壓的量測……………………………………23
4-4 溫度的影響…………………………………………24
4-5頻率響應……………………………………………26
第五章結論與未來工作…………………………………………28
參考文獻

參考文獻
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