臺灣博碩士論文加值系統

本研究是利用溶膠─凝膠法製備摻雜銻之二氧化錫溶膠，並且利用水熱法處理（Hydrothermal Process）進而獲得具有高結晶度的溶膠，以此一溶膠製備電化學電容電極。再不加入任何黏著劑（binder）的條件下探討在不同條件對於電極性質之影響。之後，再利用此一電極為基材進行處理以改變其電化學特性。摻雜銻之二氧化錫電極具有半導體電極的性質同時其電極呈現典型的電雙層電容器之特性，其電容量受到表面電荷、結晶度、比表面積與孔洞微結構之影響。二氧化錫電極之電化學表現深受粉體結晶性的影響，因此我們發現以500℃進行熱處理，為最適之熱處理溫度。同時在真空的條件下以500℃進行熱處理其比電容為大氣熱處理時之兩倍，呈現典型半導體電容之特性。我們以500℃熱處理具有良好結晶性之電極為基材利用熱解法及循環伏安法在電極上形成RuO2，使其由傳統的EDL 電容變為具有氧化還原能力的偽電容（pseudocapacitance）。

Abstract
In this thesis, we report preparation of highly crystallized antimony doped Tin oxide (ATO) sol, by using sol-gel process followed by hydrothermal process. The highly crystallized sol was used to prepare electrochemical capacitor electrode without adding any binder, which insist to characterize the properties of these electrodes in different conditions, and we have also used the ATO thin film electrodes as current-collector to increase the capacitance in various methods.
The performance of ATO thin film electrodes exhibited not only typical double-layer capacitance, but also semiconducting nature. It was found that the performance of capacitance was strongly affected by space charge, crystallization, specific surface area and the pore microstructure. It was also found the optimum heat-treated temperature was 500oC,and at this temperature, the oxide thin film was fully crystallized. The capacitance in vacuum at the optimum heat-treat temperature was observed double to the capacitance in air at the same temperature.
We used the fully crystallized ATO thin film electrode as current-collector, and formed RuO2 on the electrodes via two methods: 1.Thermal pyrolysis 2.Cyclic voltammetry. It’s behavior changed from typical EDLC to pseudocapacitance.

目錄
中文摘要Ⅰ
英文摘要Ⅱ
目錄Ⅲ
圖表索引Ⅶ
第一章 緒論1
第二章 理論與文獻回顧2
2.1 電化學電容器之簡介2
2.1.1 文獻回顧6
2.2 二氧化錫之簡介9
2.2.1 二氧化錫之物性與結構9
2.2.2 二氧化錫之應用11
2.3 溶膠-凝膠法13
2.4 SnCl4和SbCl3的水解和縮合反應與摻雜方法15
2.4.1 SnCl4的水解縮合反應15
2.4.2 Sb的摻雜方法16
2.5 水熱法簡介17
2.6 研究目的18
第三章 實驗19
3.1實驗藥品19
3.2製備Sb/SnO2溶膠20
3.2.1 純二氧化錫溶膠之製備20
3.2.2 摻雜銻之二氧化錫溶膠製備20
3.3 水熱法處理與電極之製備21
3.3.1 水熱處理21
3.3.2 電極之製備21
3.4 樣品之基本物性分析27
3.4.1 X光繞射分析27
3.4.2 掃瞄式電子顯微鏡27
3.4.3 穿透式電子顯微鏡28
3.4.4 四點測量28
3.4.5 比表面積，孔徑分佈之分析29
3.5 超高電容器之電性分析31
3.5.1 電容器測試單元之組成31
3.5.2 測試單元之電化學性質分析31
第四章 結果與討論34
4.1 水熱處理對於摻雜銻的二氧化錫溶膠之影響34
4.2 熱處理對於二氧化錫電極之影響37
4.2.1 熱處理溫度對於二氧化錫粉體結晶性之影響37
4.2.2 熱處理溫度對於比表面積及孔徑分佈之影響45
4.3 二氧化錫電極之電化學性質50
4.3.1 熱處理溫度對於二氧化錫薄膜電極之影響50
4.3.2 薄膜厚度對於二氧化錫薄膜電極之影響58
4.3.3 不同的電解液對於薄膜二氧化錫電極之影響61
4.3.4 燒結氣氛的探討66
4.4 結論與建議70
第五章 複合電極72
5.1 前言72
5.2 電極製備73
5.3 結果與討論77
5.4 結論與建議86
第六章 參考文獻87

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