臺灣博碩士論文加值系統

摘要
在本論文中，我們詳細的研究了氧化矽奈米管與金屬氧-化矽-矽異質結構光學與電學的性質。
Ⅰ. 氧化矽奈米管
首先，我們利用光激螢光光譜和傅立葉轉換遠紅外光吸收光譜的測量來探討氧化矽奈米管的光學性質。從我們的結果中發現，此樣品在氮氣的環境下退火後,其光激螢光光譜訊號會有增強的現象。我們更由傅立葉轉換遠紅外光吸收光譜的測量結果中知道此發光範圍是由於表面化合物Si-OH的鍵結所造成。此外，我們更由變溫的光激螢光光譜得知氧化矽奈米管的表面有Si-OH的振動模式。這樣的結果也從最近的文獻中得到驗證。最後，我們發現此氧化矽奈米管還有持續性光激螢光現象，而根據先前的文獻中得知和表面化合物Si-OH的鍵結有關係。所以我們成功的解釋氧化矽奈米管的光學性質。
Ⅱ. 金屬-氧化矽-矽
接著，我們利用光激螢光光譜，電激螢光光譜和光電導的測量來探討金屬氧化矽矽異質結構光學與電學的性質。經由光激螢光光譜和光電導測量分析後發現，樣品的發光機制是來自於氧化矽和矽介面之間的侷限態。除此之外，我們還發現樣品的光學性質中還有能隙再歸一以及雙激子的特性，而這些效應都是來自於載子聚積在氧化矽和矽介面之間的侷限態的緣故。

Abstract
In this thesis, we present detailed studies of optical and electrical properties of silicon dioxide nanotubes and metal-oxide-silicon heterostructures.
Ⅰ. Silicon dioxide nanotube (MCM-41)
The optical studies of SiO2 mesoporous materials with hierarchical tubules-within-tubule structure have been investigated by photoluminescence (PL) and Fourier transform infrared transmittance (FTIR). Our results suggest that the radiative intensity can be strongly enhanced by annealing the samples in N2 environment. From the FTIR spectra, we have pointed out that the origin responsible for the strong emission is Si-OH complexes located on nanotube surface. It has been observed that after turning off the pumping laser, the photoluminescence signal of SiO2 nanotubes can persist for several seconds, which is much longer than that of most materials performed under similar conditions. We have found that the decay of the photoluminescence signal is due to the quantum tunneling process.
Ⅱ. Metal-oxide-silicon (MOS) heterostructures
The optoelectrical properties of metal-oxide-semiconductor (MOS) for silicon heterostructures have been investigated by electroluminescence (EL), photoluminescence (PL) and photoconductivity (PC) spectroscopies. Through a detailed study of PL and PC spectra, we demonstrate that the localized states on SiO2/Si interface play an important role in determining the optical properties of Si-MOS structure. In addition, we discover the effect of band-gap renormalization and electron-hole plasma recombination in our measurements. We point out that the localization paves the path for the observation of these two effects, due to the accumulation of excited carriers on the localized states.

Contents
1.Introduction 8
1.1Mesoporous aluminosilicate MCM-41……………………..08
1.2Metal-oxide-semiconductor for silicon……………………10
1.3Reference………………………………………………………13
2.Techniques for optoelectronical measurem-
ents 15
2.1Photoluminescence (PL)…………………………………….15
2.2Electroluminescence (EL)…………………………………..35
2.3Photoconductivity (PC)……………………………………..39
2.4Reference………………………………………………………43
3.Strong visible Photoluminescence from SiO2 nanotubes at room temperature 45
3.1Introduction…………………………………………………..45
3.2Sample preparation…………..………………………………46
3.3Experiment…………………………………………………….52
3.4Results and discussion………………………………………52
3.5Summary……………………………………………………….60
3.6Reference………………………………………………………61
4.Mechanism of luminescence from metal-oxide- semiconductor for silicon heterostructures 63
4.1Introduction………………..…………………………………63
4.2Theoretical background…………………………………….64
4.3Sample preparation………..…….………………………….68
4.4Experiment……..…………….………………………………70
4.5Results and discussion……………………………………..71
4.6Summary………………………………………………………85
4.7Reference……………………………………………………..86
5.Conclusion 88

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