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研究生:顏昇宏
研究生(外文):Sheng-Hung Yan
論文名稱:互補式金氧半導體射頻收發機電路設計
論文名稱(外文):CMOS RF Transceiver Circuit Design
指導教授:瞿大雄
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電信工程學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2001
畢業學年度:89
語文別:英文
論文頁數:59
中文關鍵詞:互補式金氧半導體射頻收發機
外文關鍵詞:CMOSRFtransceiver
相關次數:
  • 被引用被引用:0
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摘要
由於互補式金氧半導體(CMOS)製程之晶片整合度高、製作成本低廉,因此本論文嘗試利用晶圓廠所提供之標準製程,製作一工作頻率在2.4GHz接收機之射頻前端電路。該前端電路之設計,係基於適用於直接調變發射,與直接降頻接收之無線收發機架構。
第二章,主要敘述CMOS射頻用模型和傳統類比和數位電路設計用模型之差異。於傳統BSIM3V3模型中適當地加入電阻、電容和二極體,用以模擬高頻電路所無法忽略之寄生效應,可使原本使用於類比和數位電路設計之BSIM3模型,適用於射頻頻段。
第三章則敘述使用台積電所提供之0.25um standard CMOS製程,設計射頻前端電路,包含低雜訊放大器、壓控振盪器和混頻器等射頻電路。此外並將所設計之低雜訊放大器、壓控振盪器和混頻器,經過適當修改,整合成一個射頻收發電路。
由於目前此些元件正在晶圓廠製作中,預期未來元件及收發機測試將為一相當吃重之工作。此些CMOS元件,特別是收發元件,將可對射頻收發機提供一具有經濟效益的參考設計。

ABSTRACT
Standard CMOS process has advantages of high integration ability of base-band, IF and RF modules into a single chip with low cost. In this thesis, several RF front-end circuits operated at 2.4GHz are designed using the standard CMOS process. The RF components are designed based on direct-modulation transmitter and direct-conversion receiver architectures.
In Chapter 2, CMOS RF model is studied and compared with the traditional BSIM3 model which has been widely used in analog and digital circuit design. By properly adding resistors, capacitors and diodes to the intrinsic BSIM3 model to account for the parasitic effect, BSIM3V3 model with appropriate modification becomes suitable for RF circuit simulation.
In Chapter 3, three RF front-end circuits are designed using TSMC 0.25um standard CMOS process. With proper modification, they are integrated into a single chip as for a CMOS RF front-end transceiver.
Since these chips are currently fabricated, the performance tests of individual CMOS circuit and the transceiver chip will be an intensive work in the near future. The applications of the these CMOS circuits especially the transceiver chip are suitable for the realization of a cost-effective RF transceiver.

TABLE OF CONTENTS
AbstractI
List of FiguresIV
List of TablesVI
Chapter 1. Introduction1
1.1 Study Motivation1
1.2 CMOS RF Device Modeling2
1.3 Transceiver Architectures2
Heterodyne receivers2
Homodyne receivers3
Direct Conversion Transmitters6
1.4 Objective of This Work7
Chapter 2. CMOS RF Device Modeling11
2.1 MOSFET RF Modeling11
2.2 De-embedding Technique14
2.3 The Foundry Device Library Description16
Chapter 3. Transceiver Circuit Design22
3.1 Transceiver Description22
3.2 Low Noise Amplifier Circuit24
Introduction24
Circuit Design28
Simulation Results29
3.3 Voltage-Controlled Oscillator Circuit30
Introduction30
Circuit Design31
Simulation Results34
3.4 Gilbert-Cell Mixer Circuit35
Introduction35
Circuit Design36
Simulation Results38
3.5 Transceiver Integrated Circuit38
Circuit Design38
Chapter 4. Conclusions54
Reference 56

REFERENCE
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