臺灣博碩士論文加值系統

我們利用無接點電場調制 (CER) 、壓電調制 (PzR) 及光子調制反射光譜 (PR) 量測以分子束磊晶法 (MBE) 及有機金屬化學氣相沈積法 (MOCVD) 成長於 (001) 之砷化鎵基板上的立方晶系氮化鎵薄膜之近能帶的躍遷信號。我們利用不同調制技術觀察激子躍遷的信號，E0，及由價電帶上所形成之旋轉軌道分裂，E0+Δ0，之值。並利用Varshni及Bose-Einstein聲子耦合之關係式分別求得E0及E0+Δ0隨溫度變化之係數，並探討此係數和其它烏采結構作一比較。
由有機金屬化學氣相沈積法所成長之立方晶系氮化鎵，除了觀察E0及E0+Δ0之躍遷能量外，我們更進一步利用包含電子及縱向光聲子耦合參數之Bose-Einstein方程式探討展寬參數對溫度的關係，和其它研究團對所做之烏采結構氮化鎵做一比較。而閃鋅結構之GaN能隙及溫度變化係數皆小於烏采結構之氮化鎵。

We have performed contactless electroreflectance (CER) and piezoreflectance (PzR) and photoreflectance (PR) measurements in studying the near band edge interband transitions of a cubic GaN film grown on GaAs (001) substrate by molecular beam epitaxy and metalorganic chemical vapor deposition. For the samples, both the excitonic transition and the transition from the spin-orbit splitting in the valence band ( ) are observed. The parameters that describe the temperature dependence of the energies have been analyzed by both the Varshni equation and an expression containing the Bose-Einstein occupation factor for phonons.
For the samples grown by metalorganic chemical vapor deposition, the temperature dependence of the broadening parameter has also been studied in terms of Bose-Einstein equation that contains the electron (exciton)- longitudinal optical (LO) phonon coupling constant. The obtained parameters are compared with those of wurtzite GaN. The energy gap and the parameters which describe the temperature dependence of E0(T) for cubic GaN are found to be lower than that of hexagonal GaN

中文摘要----------------------------------------------------------------------------Ⅰ
英文摘要----------------------------------------------------------------------------Ⅱ
目 錄----------------------------------------------------------------------------Ⅲ
圖表索引----------------------------------------------------------------------------Ⅴ
第一章緒論----------------------------------------------------------------------1
第二章氮化鎵半導體材料4
2.1Ⅲ-Ⅴ族氮化鎵化合物相關特性4
2.2立方晶系氮化鎵簡介6
2.3立方晶系氮化鎵生長與製備8
2.3.1以MBE成長之立方晶系氮化鎵8
2.3.2以MOCVD成長之立方晶系氮化鎵8
第三章調製光譜理論及量測技術9
3.1前言9
3.2物理量與介電函數的關係10
3.2.1反射率與介電函數之關係10
3.2.2未束縛態電場調制反射光譜12
3.3調制光譜系統概論15
3.4調制光譜技術概論18
3.4.1光子調制反射光譜(PR)18
3.4.2壓電調制反射光譜(PzR)19
3.4.3無接點式電場調制反射光譜(CER)19
第四章結果與討論-------------------------------------------------------------22
4.1前言22
4.2以MBE成長之c-GaN的調制光譜23
4.3以MOCVD成長之c-GaN的調制光譜38
第五章結論----------------------------------------------------------------------48
參考資料----------------------------------------------------------------------------49

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